Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT.最新文献

{"title":"The drain current asymmetry of 130 nm MOSFETs due to extension implant shadowing originated by mechanical angle error in high current implanter","authors":"K. Yoneda, M. Niwayama","doi":"10.1109/IWJT.2002.1225190","DOIUrl":"https://doi.org/10.1109/IWJT.2002.1225190","url":null,"abstract":"The drain current asymmetry of 130 nm n-MOSFETs due to extension and source/drain ion implantation shadowing at the edge of gate electrode has been investigated. The ion implantation angle error is occurred even the tilt and twist angles are mechanically set as 0 degree. This ion implantation angle error is remarkable at periphery area of 200 mm wafer. This angle error originated in wheel design and scanning method of a high current ion implanter. Those are structural limitation of a high current batch type ion implanter. The drain current asymmetry can be dramatically reduced by using 4-step (Tilt/Twist=0/0, 0/90, 0/180, 0/270 deg.) ion implantation for extension implant similar to pocket implant. Therefore, even the low energy, high current ion implantation such as extension and source/drain implant, 4-step ion implantation is indispensable to reduce the drain current asymmetry.","PeriodicalId":300554,"journal":{"name":"Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130249127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photoluminescence and ab initio study of {311} defect nucleation in Si","authors":"H. Tsuji, R. Kim, T. Hirose, M. Furuhashi, M. Tachi, K. Taniguchi","doi":"10.1109/IWJT.2002.1225200","DOIUrl":"https://doi.org/10.1109/IWJT.2002.1225200","url":null,"abstract":"Photoluminescence (PL) study using Ar laser revealed that {311} defect-precursors exist in the samples annealed at either 620 or 670/spl deg/C after silicon implantation. The peak energy shift from 0.94 to 0.90 eV is a direct evidence of atomic structural transformation from the smaller precursor interstitial clusters to {311} defects. The atomic structure of the precursor was investigated by using the ab initio calculation program. The numerical calculation demonstrated that one of the most plausible structures for the precursors is the di-interstitial.","PeriodicalId":300554,"journal":{"name":"Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT.","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129881077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The angle control within a wafer in high-energy implanter of batch type","authors":"Y. Kawasaki, T. Yamashita, M. Kitazawa, T. Kuroi, Y. Ohno, M. Yoneda","doi":"10.1109/IWJT.2002.1225189","DOIUrl":"https://doi.org/10.1109/IWJT.2002.1225189","url":null,"abstract":"For the purpose to reduce the angle deviation within a wafer in conventional batch implanter, the optimization of disk position based on the calculation and the usage of disk the 2/spl deg/ cone angle were investigated. By these effects, we performed to improve the uniformity of sheet resistance within a wafer implanted at small beam incident angle.","PeriodicalId":300554,"journal":{"name":"Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT.","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115875982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"SOI formation by light ion implantation and annealing in oxygen including atmosphere","authors":"A. Ogura","doi":"10.1109/IWJT.2002.1225187","DOIUrl":"https://doi.org/10.1109/IWJT.2002.1225187","url":null,"abstract":"We have developed a novel Si-on-insulator fabrication technique in which light ions, such as H/sup +/ and He/sup +/, are implanted into a Si substrate instead of O/sup +/ implantation in the SIMOX (separation of implanted oxygen) process. The atmospheric oxygen atoms precipitate at the implantation damage during high temperature annealing in an oxidized atmosphere. A continuous buried oxide layer was successfully formed in a Si substrate under appropriate conditions, particularly a slow ramping rate and a high oxygen concentration in the atmosphere for the anneal. Partial SOI and SON (Si on nothing) formations were also demonstrated by the technique and showed superior characteristics in both crystalline quality and surface smoothness.","PeriodicalId":300554,"journal":{"name":"Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT.","volume":"83 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116361904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Silicide technology for USJ in next technology node","authors":"K. Suguro, T. Iinuma, M. Izuha, K. Ohuchi, A. Hokazono, K. Miyano, I. Mizushima","doi":"10.1109/IWJT.2002.1225206","DOIUrl":"https://doi.org/10.1109/IWJT.2002.1225206","url":null,"abstract":"Silicide technology for ultra-shallow junction in next technology node is discussed. Salicide material is changed from low resistivity refractory metal silicide to near-noble metal silicide from the view point of less consumption of Si by silicidation. The pn junction leakage for shallow S/D can be drastically improved by NiSi as compared with CoSi/sub 2/.","PeriodicalId":300554,"journal":{"name":"Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130747945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of pre-amorphization for the reduction of contact resistance using laser thermal process","authors":"T. Yamamoto, K. Goto, T. Kubo, Y. Wang, T. Lin, S. Talwar, M. Kase, T. Sugii","doi":"10.1109/IWJT.2002.1225192","DOIUrl":"https://doi.org/10.1109/IWJT.2002.1225192","url":null,"abstract":"In this paper, for the first time, we report the effect of pre-amorphization for the reduction of contact resistance of CoSi/sub 2/-Si using Laser Thermal Process (LTP). Owing to the lower melting point of pre-amorphized Si, we can achieve much lower contact resistance in the lower laser power conditions. And the larger junction leakage current and junction capacitance can be much reduced by combining pre-doping and pre-RTA technique with LTP.","PeriodicalId":300554,"journal":{"name":"Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT.","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131366766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Gas phase doping at room temperature","authors":"Y. Sasaki, B. Mizuno, S. Akama, R. Higaki, K. Tsutsui, S. Ohomi, H. Iwai","doi":"10.1109/IWJT.2002.1225196","DOIUrl":"https://doi.org/10.1109/IWJT.2002.1225196","url":null,"abstract":"This paper shows new technology of gas phase doping to realize lowest energy around room temperature thermal potential. Shallow junction formation around 1.5-2 nm is anticipated by gas phase doping.","PeriodicalId":300554,"journal":{"name":"Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT.","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125995945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Gate insulating layer impact on the extension profile of the sub-50 nm p-MOSFET","authors":"H. Fukutome, H. Arimoto, S. Watanabe, H. Ohta, M. Hori","doi":"10.1109/IWJT.2002.1225198","DOIUrl":"https://doi.org/10.1109/IWJT.2002.1225198","url":null,"abstract":"The gate insulating layer impact on the extension profiles of the sub-50 nm p-MOSFETs is evaluated by direct visualization with the use of STM. The variation in the overlap between the gate electrode and the extension is measured. This variation is qualitatively consistent with that expected from the roll-off characteristics. Based on the results, it is considered that the horizontal extension profile strongly depends on the stress near the Si/SiON interface. It is also indicated that the insulating layer strongly affects on the horizontal abruptness of the junction near the Si/SiON interface.","PeriodicalId":300554,"journal":{"name":"Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129928527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Doping accuracy requirements of USJ processes for advanced sub-100 nm CMOS devices","authors":"A. Murrell, A. Al-Bayati, H. Graoui, J. Spear, H. Ito, Y. Matsunaga, K. Ohuchi, K. Adachi, K. Miyashita, T. Nakayama, M. Oowada, Y. Toyoshima","doi":"10.1109/IWJT.2002.1225188","DOIUrl":"https://doi.org/10.1109/IWJT.2002.1225188","url":null,"abstract":"The gate length in advanced logic devices is being scaled increasingly aggressively to achieve speed requirements. It is therefore essential that device performance at short gate lengths (Vt roll-off, sub-threshold leakage) have a tight distribution, to avoid a spread of device performance or poor yield. The short channel behaviour of sub-100 nm devices is becoming increasingly sensitive to the source-drain extension region, and the accuracy of processing tools used to dope this region therefore have a direct effect on the device variability. However it has not been determined before which process parameters in the doping process have the largest effect on device performance, and this understanding is vital in setting the accuracy specification of implant and annealing tools for volume production. In this paper we review device data obtained in skew test experiments, aimed at establishing the sensitivity of device performance to different USJ (Ultra Shallow Junction) processing parameters. Advanced CMOS LOGIC devices were processed by ion implantation and rapid thermal annealing, using a matrix of implant and anneal parameters. NMOS and PMOS devices with gate lengths below 100 nm were processed using a 90 nm USJ module process, incorporating sub-keV implantation and spike annealing. A number of process parameters were then varied, including: implant energy, implanted dose, energy contamination level, spike anneal peak temperature and anneal ramp-up cool-down rates. The implant and anneals were done a Quantum Leap implanter and a Radiance RTP respectively. Various features including junction depth (X/sub j/), sheet resistance and other device parameters were examined in order to quantify the sensitivity of the devices to the implant and anneal parameters. From these results the required accuracy, uniformity and repeatability specifications were determined, for the implant and annealing tools to be used for production of sub-100 nm node CMOS devices.","PeriodicalId":300554,"journal":{"name":"Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT.","volume":"129 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123225662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of pulse duration on KrF excimer laser annealing process for ultra shallow junction formation","authors":"K. Kagawa, Y. Niwatsukino, A. Matsuno, K. Shibahara","doi":"10.1109/IWJT.2002.1225193","DOIUrl":"https://doi.org/10.1109/IWJT.2002.1225193","url":null,"abstract":"Ultra shallow junctions were formed using boron implantation and KrF excimer laser annealing. We found that sheet resistance and junction depth of the junction and crystal defects in the junction were affected by laser pulse duration and irradiation energy density. An ultra shallow junction of 26 nm junction depth and 350/spl Omega///spl square/ of sheet resistance without twin was obtained by the laser anneal with 55 ns pulse duration laser. We reduced the required energy density to form the ultra shallow junction by healing the Si substrate.","PeriodicalId":300554,"journal":{"name":"Extended Abstracts of the Third International Workshop on Junction Technology, 2002. IWJT.","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125173607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}