Martín Aversa, Nicolas A. Roqueiro, Camila Borrazás, Juan Ignacio Sangiorgio, Hilario D. Boggiano, Juan Bonaparte, Andrés Di Donato, María Cecilia Fuertes, Andrea V. Bragas, Gustavo Grinblat
{"title":"Guided Acoustic Waves in MoS2 Thin Flakes","authors":"Martín Aversa, Nicolas A. Roqueiro, Camila Borrazás, Juan Ignacio Sangiorgio, Hilario D. Boggiano, Juan Bonaparte, Andrés Di Donato, María Cecilia Fuertes, Andrea V. Bragas, Gustavo Grinblat","doi":"10.1021/acsaom.6c00296","DOIUrl":"10.1021/acsaom.6c00296","url":null,"abstract":"<p>Guided acoustic waves in 2D materials are vital for energytransport,yet their behavior in transition metal dichalcogenides remains poorlyunderstood. Here, we use spatially decoupled ultrafast optical techniquesto investigate guided waves in MoS<sub>2</sub> flakes (90–410nm). We observe propagating acoustic excitations with a constant velocityof (6.7 ± 0.8) km s<sup>–1</sup>, independent of thickness.Simulations and symmetry analysis reveal these vibrations deviatefrom classical Lamb wave models, instead acting as a superpositionof decoupled longitudinal and shear modes. Their optical detectabilityis governed by the Poisson effect: longitudinal components modulatethickness to generate signals, while shear motion remains invisible.An intrinsic attenuation length of ∼13 μm suggests dissipationis influenced by material-specific mechanisms rather than only geometricspreading. Finally, we demonstrate remote excitation across nanometricsteps, enabling acoustic generation in inaccessible regions. Thesefindings provide a foundation for nanoscale phononic circuits andengineered energy transport in optomechanical and quantum acousticdevices.</p>","PeriodicalId":29803,"journal":{"name":"ACS Applied Optical Materials","volume":"4 7","pages":"2235–2242"},"PeriodicalIF":3.4,"publicationDate":"2026-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148624524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Photoluminescence-Based DNA Biosensing of Tuberculosis Using Defect-Rich Cerium Oxide Nanomaterials","authors":"Jeba Grace Tigga, Manoj Kumar Patel","doi":"10.1021/acsaom.6c00198","DOIUrl":"10.1021/acsaom.6c00198","url":null,"abstract":"<p>Defect-engineered cerium oxide (CeO<sub>2</sub>) nanosheetsweredeveloped as a label-free photoluminescence (PL) platform for ultrasensitiveDNA detection. The CeO<sub>2</sub> nanosheets exhibited defect-mediatedemission associated with oxygen vacancies. Probe DNA (ssDNA) immobilizationenhanced PL intensity due to surface passivation, whereas hybridizationwith complementary target DNA (tDNA) induced significant PL quenchingvia guanine-mediated photoinduced electron transfer (PET). The biosensorshowed a linear detection range of 0.35 to 42 pM with a low detectionlimit of 0.179 pM. Excellent selectivity and successful detectionin clinical DNA samples demonstrate the potential of CeO<sub>2</sub> nanosheets for sensitive optical DNA biosensing.</p>","PeriodicalId":29803,"journal":{"name":"ACS Applied Optical Materials","volume":"4 7","pages":"1992–1999"},"PeriodicalIF":3.4,"publicationDate":"2026-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148651062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sangjin Min, Joohan Bae, Subin Choi, Changeun Park, Tae Kyoung Kim, Mandar A. Kulkarni, Joon Seop Kwak, Sang-Wan Ryu, Jong-In Shim, Dong-Soo Shin
{"title":"Analysis of Carrier Dynamics in InGaN/GaN Multiple-Quantum-Shell Nanorod Light-Emitting Diodes by Impedance Spectroscopy","authors":"Sangjin Min, Joohan Bae, Subin Choi, Changeun Park, Tae Kyoung Kim, Mandar A. Kulkarni, Joon Seop Kwak, Sang-Wan Ryu, Jong-In Shim, Dong-Soo Shin","doi":"10.1021/acsaom.6c00196","DOIUrl":"10.1021/acsaom.6c00196","url":null,"abstract":"<p>Optoelectronic characteristics of the InGaN/GaN nanorodlight-emittingdiode (NR-LED) are reported. The fabricated NR-LED device has InGaN/GaNmultiple-quantum-shells on <em>c</em>-, <em>r</em>-, and <em>m</em>-planes, which have been grown on the GaNnanorod template. The electroluminescence spectra measured as a functionof current reveal that carrier injection occurs from the lowest-energy <em>c</em>-plane to the <em>r</em>-plane, and eventuallyto the <em>m</em>-plane on the side of the rod. The peak wavelengthshows a shift >150 nm (600 to 435 nm) as the injection currentincreases.The impedance spectroscopies are performed at low current levels toassess the carrier injection mechanism of the device. It is demonstratedthat the impedance data cannot be fitted with the conventional small-signalequivalent circuit consisting of a resistor and a capacitor connectedin parallel as well as a series resistor. Another circuit of parallelresistor-capacitor needs to be added to the conventional equivalentcircuit to fit the experimental impedance data more accurately. Differentialcarrier lifetimes and the separated parallel capacitance and resistancevalues indicate that one of the parallel resistor-capacitor circuitsreflects not the recombination process, but a transport to the activeregion, hindering the radiative recombination in the low-current regime.This additional charge-storage element is considered to reflect theunique current injection mechanism of the NR-LED.</p>","PeriodicalId":29803,"journal":{"name":"ACS Applied Optical Materials","volume":"4 7","pages":"2067–2073"},"PeriodicalIF":3.4,"publicationDate":"2026-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148651097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"From Kasha to Anti-Kasha: Nanomaterials Unlock Applications","authors":"Richardson Lawrance, Shunmuga Nathan Shunmuga Nainar, Partha Chowdhury, Meng-Huan Liu, Yang-Hsiang Chan, Hong-Cheu Lin","doi":"10.1021/acsaom.6c00220","DOIUrl":"10.1021/acsaom.6c00220","url":null,"abstract":"<p>Precise controls over light emissions are essential formodernphotonic technologies. However, conventional organic luminophoresare fundamentally constrained by Kasha’s rule, which restrictsemissions to the lowest excited states. Anti-Kasha emissions, whereradiative decay occurs directly from higher excited states, breakthis limitation and opens various spectral possibilities. Recent advancesdemonstrate that organic nanomaterials provide powerful platformsto stabilize and exploit higher excited-state emissions through structuralconfinements, symmetry breakings, and vibrational suppressions. Theseprinciples enable practical applications across diverse fields, includingsensors, optoelectronics, bioimaging, cellular tracking, and photocatalysis.By understanding how molecular-level strategies translate to nanoscalearchitectures, scientists can utilize higher excited-state emissionsfor next-generation photonic technologies.</p>","PeriodicalId":29803,"journal":{"name":"ACS Applied Optical Materials","volume":"4 7","pages":"1966–1991"},"PeriodicalIF":3.4,"publicationDate":"2026-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148666558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xiaohuan Li, Yong Jun Li, Jinjin He, Han Mao, Boyang Chen, Hang Wei, Mei Xue, Yongzhe Zhang
{"title":"Broadband Photodetectors Based on Perovskite Crystalline Arrays for Motion Detection","authors":"Xiaohuan Li, Yong Jun Li, Jinjin He, Han Mao, Boyang Chen, Hang Wei, Mei Xue, Yongzhe Zhang","doi":"10.1021/acsaom.6c00184","DOIUrl":"https://doi.org/10.1021/acsaom.6c00184","url":null,"abstract":"<p>Broadband photodetectors are highly promising for applicationsin motion recognition and intelligent sensing systems. Currently,broadband detection mainly employs heterojunction structures thatutilize material stacking or doping to achieve broadband absorption.However, multi-interface defects, lattice mismatch, and intricatetransfer processes significantly increase fabrication complexity andpose challenges to the uniformity of the devices and the stabilityof their performance. In this work, large-area single-component MAPbBr<sub>3</sub> microwire arrays and corresponding photodetector deviceswere successfully fabricated via a template-assisted growth method.Owing to the synergistic effects of in-bandgap and sub-bandgap photonabsorption, the device exhibits an excellent photoresponse acrossa broad spectrum, including wavelengths of 405 nm, 532 nm, 671 nm,and 808 nm. Besides, the photodetector demonstrates high responsivity(<em>R</em><sub>max</sub> = 70 A/W) and high specific detectivity(D*<sub>max</sub> = 7.55 × 10<sup>13</sup> Jones). Under 532nm laser illumination, a pronounced open-circuit voltage of 0.17 Vwas observed, indicating its potential for self-powered operation.Finally, using this arrayed photodetector, moving object detectionunder simulated sunlight irradiation was successfully demonstrated,offering a viable technical approach for noncontact motion monitoring.</p>","PeriodicalId":29803,"journal":{"name":"ACS Applied Optical Materials","volume":"4 7","pages":"2040–2047"},"PeriodicalIF":3.4,"publicationDate":"2026-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148682516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The Material Selection of High Numerical Aperture EUV Mask Absorbers Based on Waveguide Effects and Aerial Image Metrics","authors":"Chang Liu, Bochao Li, Hailiang Li, Zhenlong Zhao, Xiaowei Song, Jingquan Lin","doi":"10.1021/acsaom.6c00231","DOIUrl":"10.1021/acsaom.6c00231","url":null,"abstract":"<p>Theimaging quality of extreme ultraviolet lithography (EUVL) dependson the optical properties, the thickness of the mask absorber material,and the illumination shape of the source. For high numerical aperture(NA) mask absorbers, we can analyze how to mitigate their mask three-dimensional(M3D) effects based on waveguide effects using test light sources.Then, we can improve key metrics such as the normalized image logslope (NILS), the (BFV), the throughput criterion (TpT), the thresholdto size (TtS), and the critical dimension (CD) error of the aerialimages. This study effectively screens high-NA EUV mask absorber materialsbased on the waveguide effect in the absorber. It provides a reasonableexplanation for the imaging trend, presents a method to improve thescreening efficiency of absorber materials, and determines the finalabsorber material parameters suitable for high-NA lithography systemsby considering the limitations of actual materials and the resultsof lithography simulation. The above research has potential to experiencefor the selection of absorber materials in future hyper NA lithographysystems.</p>","PeriodicalId":29803,"journal":{"name":"ACS Applied Optical Materials","volume":"4 7","pages":"2111–2128"},"PeriodicalIF":3.4,"publicationDate":"2026-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148624801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Upconversion Nanoparticle Driven Solar Spectrum Conversion for Next-Generation Smart Photonic Windows","authors":"Paramsinh Zala, Krunal Baria, Shruti Sajwan, Mayank Gupta, Brijesh Tripathi, Prakash Chandra, Sunil Kumar Singh, Manoj Kumar, Shubhda Srivastava, Toshi S. Dhapodkar, Bipin Kumar Gupta","doi":"10.1021/acsaom.6c00322","DOIUrl":"10.1021/acsaom.6c00322","url":null,"abstract":"<p>This study aims to enhance solar energy harvesting byusing upconversion(UC) nanoparticles in luminescent solar concentrators (LSCs) to convertnear-infrared (NIR) light into visible light, thereby improving theefficiency of solar cells. Fluoride host matrix NaYF<sub>4</sub> codopedwith (2.5%) Er<sup>3+</sup> and (5, 10, and 15%) Yb<sup>3+</sup> weresynthesized using the hydrothermal method and characterized usingvarious physicochemical techniques like scanning electron microscopy,X-ray diffraction, Fourier transform infrared spectroscopy, Upconversionluminescence (UCL), Quantum Yield (QY), and Time-resolved Photoluminescence(TRPL) spectroscopy. The optimization was performed for differentconcentrations of Yb<sup>3+</sup> in NaYF<sub>4</sub>: Yb<sup>3+</sup>, Er<sup>3+</sup> Upconversion nanoparticles (UCNPs), and found thehighest absolute QY for the 10% Yb<sup>3+</sup> doped sample of 1.97%,with the average carrier lifetime of 177 μs. Further, this UCNPs is embedded into the polymer matrix to fabricate the LSC slab withdifferent concentrations of the material into the polymer matrix.The 0.5 wt % UCNPs in the resin matrix give the highest <em>I</em><sub>SC</sub> of 22.5 mA when attached to silicon solar cells, witha power conversion efficiency (PCE) of 5.02%. The findings suggestthat NaYF<sub>4</sub>-based UCNPs can be highly effective for next-generationsmart photonic windows to achieve the target of net-zero energy buildings.</p>","PeriodicalId":29803,"journal":{"name":"ACS Applied Optical Materials","volume":"4 7","pages":"2262–2275"},"PeriodicalIF":3.4,"publicationDate":"2026-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148666637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"High Quality Ternary Crystal Ta2Ni3Te5 as a Fiber-Integrated Saturable Absorber for Ultrafast Fiber Laser","authors":"Cheng Xiang, Junliang Guo, Guobao Jiang, Minghui Yang, Jieyi Chen, Xuancheng Zhu, Zuoqiang Huang, Yue Zhou, Yuan Gan, Quanlong Zhang, Qiang Yu, Ying Chen","doi":"10.1021/acsaom.6c00197","DOIUrl":"10.1021/acsaom.6c00197","url":null,"abstract":"<p>The development of high-performancesaturable absorbers(SAs) combiningstrong nonlinear optical response, robust environmental stability,and ease of fiber integration remains critical for advancing compactultrafast fiber laser systems. Here, a fiber integrated SA was demonstratedbased on the high quality ternary crystal Ta<sub>2</sub>Ni<sub>3</sub>Te<sub>5</sub>, synthesized by chemical vapor transport and transferredonto fiber facets via a precision dry-transfer technique. Benefitingfrom its van der Waals layered structure and unique electronic topology,Ta<sub>2</sub>Ni<sub>3</sub>Te<sub>5</sub> based SA exhibits a modulationdepth of 19.98% and a saturation intensity of 0.74 GW/cm<sup>2</sup> at 1.55 μm excitation. When incorporated into an erbium-dopedfiber laser cavity, the Ta<sub>2</sub>Ni<sub>3</sub>Te<sub>5</sub>–SA enables both stable dual-wavelength Q-switching and robustmode-locking. In the mode-locked regime, the laser delivers picosecondpulses (2.07 ps), with a repetition rate of 10.66 MHz. It is worthnoting that the output power of the pulsed laser is up to 24.6 mW,and the signal-to-noise ratio is as high as 76.8 dB. Moreover, theSA exhibits strong optical damage resistance and maintains stableperformance after prolonged storage, underscoring its environmentalrobustness. This work establishes Ta<sub>2</sub>Ni<sub>3</sub>Te<sub>5</sub> as a promising nonlinear optical material for ultrafast photonicsand provides a practical pathway toward high-performance, fiber pulsedlaser sources.</p>","PeriodicalId":29803,"journal":{"name":"ACS Applied Optical Materials","volume":"4 7","pages":"2056–2066"},"PeriodicalIF":3.4,"publicationDate":"2026-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148656414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Martina Zangari, Francesco Stancari, Tommaso Salzillo, Adrian Tamayo, Marta Mas-Torrent, Lorenzo Soprani, Gabriele D’Avino, Francesco Mezzadri, Matteo Masino, Patrizio Graziosi, Elisabetta Venuti
{"title":"Disentangling Polymorphism, Texture, and Molecular Orientation in TIPS-Pentacene Thin Films by Polarized Raman Spectroscopy","authors":"Martina Zangari, Francesco Stancari, Tommaso Salzillo, Adrian Tamayo, Marta Mas-Torrent, Lorenzo Soprani, Gabriele D’Avino, Francesco Mezzadri, Matteo Masino, Patrizio Graziosi, Elisabetta Venuti","doi":"10.1021/acsaom.6c00277","DOIUrl":"https://doi.org/10.1021/acsaom.6c00277","url":null,"abstract":"<p>Thin-film processingcan alter the crystal structure of organicsemiconductors, making it difficult to disentangle the respectiveroles of polymorphism, texture, and molecular orientation in the chargetransport. Here, highly oriented thin films of 6,13-bis(triisopropylsilylethynyl)pentacene(TIPS-pentacene) prepared by bar-assisted meniscus shearing are investigatedby combining grazing-incidence X-ray diffraction, polarized Ramanspectroscopy, and periodic first-principles calculations. We showthat bar-assisted meniscus shearing does not generate a distinct thinfilm polymorph under the investigated conditions. Instead, the filmsadopt the bulk Form I structure while developing pronounced out-of-planeand in-plane textures. Grazing-incidence X-ray diffraction establishesthe film texture, while polarized Raman spectroscopy and periodicdensity functional theory calculations support the Form I assignmentthrough the angular dependence and low-frequency vibrational fingerprint.In particular, the calculations reproduce the phonon frequencies andpolarization dependence, support the vibrational assignment, and showthat low-frequency modes in TIPS-pentacene have mixed inter- and intramolecularcharacter, which makes them especially sensitive to subtle packingdifferences. Comparison among the reported polymorphs further showsthat their inherent structure energetics, Raman fingerprints, andtransport-related properties remain clearly distinguishable. Overall,this work establishes polarized Raman spectroscopy, combined withgrazing-incidence X-ray diffraction and theory, as an effective routeto resolve polymorph, texture, and molecular orientation in highlyordered organic semiconductor films.</p>","PeriodicalId":29803,"journal":{"name":"ACS Applied Optical Materials","volume":"4 7","pages":"2224–2234"},"PeriodicalIF":3.4,"publicationDate":"2026-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148656121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Regulated Grain Growth for Lead-Free Cs3Bi2I9 and Self-Powered Photodetectors","authors":"Yubo Wan, Mengfan Liu, Guocheng Zhu, Hao Sun, Jiahao Yang, Zizhi Wang, Huiyun Wei, Huiyin Zhang","doi":"10.1021/acsaom.6c00312","DOIUrl":"10.1021/acsaom.6c00312","url":null,"abstract":"<p>Highcrystallinity and low trap density are fundamental prerequisitesfor perovskite materials to achieve high performance in optoelectronicapplications. Compared with their well-developed lead (Pb)-based counterparts,bismuth (Bi)-based perovskites exhibit inferior performance, primarilydue to poor crystallization and high defect concentrations in polycrystallinefilms. The fabrication of smooth, compact Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub> films with distinctly visible large-sized grains remainsa significant challenge. Herein, we prepared high-quality Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub> films with large grains by promotingripening growth of small grains via a modified antisolvent strategy.The resulting Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub> films exhibitedenhanced crystallinity and absorption, along with reduced defect densityand suppressed nonradiative recombination, which are conducive tothe fabrication of high-performance photodetectors. Self-powered photodetectorsassembled from these Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub> filmsdemonstrated an on/off ratio of up to 1.2 × 10<sup>5</sup>, aresponsivity (R) of 0.44 mA/W, and a specific detectivity (D*) of4.12 × 10<sup>10</sup> Jones under 1 sun illumination. This workpaves the way for the preparation of high-quality Bibased perovskitefilms and highlights their potential in optoelectronic applications.</p>","PeriodicalId":29803,"journal":{"name":"ACS Applied Optical Materials","volume":"4 7","pages":"2253–2261"},"PeriodicalIF":3.4,"publicationDate":"2026-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148666290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}