ACS Applied Optical Materials最新文献_第7页

ACS Applied Optical Materials Pub Date : 2025-05-23

Subhajit Dutta, Jung Hyeon Yoo, Seok Bin Kwon, Ghulam Dastgeer* and Dae Ho Yoon*,

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ACS Applied Optical Materials Pub Date : 2025-05-23

Satyam Chaturvedi, Vaibhav Chauhan and Praveen C. Pandey*,

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ACS Applied Optical Materials Pub Date : 2025-05-23

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ACS Applied Optical Materials Pub Date : 2025-05-23

Peiliang Liu, Xuelian Zhang, Zhenyu Zhao*, Rajour Tanyi Ako, Sharath Sriram, Hua Qin and Chunping Jiang,

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ACS Applied Optical Materials Pub Date : 2025-05-23

Bhargav Jyoti Bora, Vuppu Vinay Pradeep, Tanari Pratap, Akella Sai Radha Aishwarya and Mari Annadhasan*,

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ACS Applied Optical Materials Pub Date : 2025-05-23

Hadar R. Yakir, Benny Bogoslavsky and Ori Gidron*,

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Exciton Manipulation via Dielectric Environment Engineering in 2D Semiconductors. 基于介电环境工程的二维半导体激子操纵。

ACS Applied Optical Materials Pub Date : 2025-05-20 eCollection Date: 2025-06-27 DOI: 10.1021/acsaom.5c00105

Raziel Itzhak, Nathan Suleymanov, Boris Minkovich, Liana Kartvelishvili, Vladislav Kostianovski, Roman Korobko, Alex Hayat, Ilya Goykhman

{"title":"Exciton Manipulation via Dielectric Environment Engineering in 2D Semiconductors.","authors":"Raziel Itzhak, Nathan Suleymanov, Boris Minkovich, Liana Kartvelishvili, Vladislav Kostianovski, Roman Korobko, Alex Hayat, Ilya Goykhman","doi":"10.1021/acsaom.5c00105","DOIUrl":"10.1021/acsaom.5c00105","url":null,"abstract":"Two-dimensional (2D) semiconductors are promising for photonic applications due to their exceptional optoelectronic properties, including large exciton binding energy, strong spin-orbit coupling, and potential integration with the standard complementary silicon-oxide-semiconductor (CMOS) technology. The dielectric environment can significantly affect the photoluminescence (PL) spectra of transition metal dichalcogenide (TMD) monolayers by modulating excitonic properties such as optical transitions and binding energies. Specifically, substrates with higher dielectric permittivity reduce exciton binding energy and the quasiparticle bandgap. Doping and the charge carrier concentration can further modify the emitted spectra by affecting the PL excitonic content. Increased doping can enhance trion formation and bandgap renormalization phenomena, leading to PL spectral shifts that depend on the semiconductor type. This study systematically investigates the substrate-induced dielectric screening, doping, and trapped charges in CVD-grown n-type 1L-WS2 and p-type 1L-WSe2 transferred onto CMOS-relevant SiO2 and HfO2 dielectrics. Our results show that p-type 1L-WSe2 exhibits higher PL intensity and red-shifted trion emission on HfO2, whereas n-type 1L-WS2 shows a blue-shifted, lower-intensity PL for a similar dielectric environment. The difference arises from the interplay of the semiconductor type, doping, dielectric screening, and charge carrier concentration. We demonstrate that suspending the monolayers at the nanoscale enhances PL by reducing nonradiative recombination, enabling controlled micro-PL patterning and the formation of localized emission hot spots. Our results provide valuable insights for the development of next-generation CMOS-compatible optoelectronic devices.","PeriodicalId":29803,"journal":{"name":"ACS Applied Optical Materials","volume":"3 6","pages":"1330-1338"},"PeriodicalIF":0.0,"publicationDate":"2025-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC12210256/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144555153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Ultraviolet and Blue Emissions of Ce- and Eu-Doped Lead-Free Halides Cs3ZnCl5 for White LEDs 白光led中Ce和eu掺杂无铅卤化物Cs3ZnCl5的紫外和蓝光辐射

ACS Applied Optical Materials Pub Date : 2025-05-15 DOI: 10.1021/acsaom.5c0008210.1021/acsaom.5c00082

Ruifeng Liu, Tianrui Zhou, Yunluo Wang, Tingting Ye, Jianghua Wu, Shihao Ge, Zesen Gao, Futing Sun, Jingshan Hou, Yongzheng Fang, Minghui Wang, Wan Jiang, Lianjun Wang* and Haijie Chen*,

{"title":"Ultraviolet and Blue Emissions of Ce- and Eu-Doped Lead-Free Halides Cs3ZnCl5 for White LEDs","authors":"Ruifeng Liu, Tianrui Zhou, Yunluo Wang, Tingting Ye, Jianghua Wu, Shihao Ge, Zesen Gao, Futing Sun, Jingshan Hou, Yongzheng Fang, Minghui Wang, Wan Jiang, Lianjun Wang* and Haijie Chen*, ","doi":"10.1021/acsaom.5c0008210.1021/acsaom.5c00082","DOIUrl":"https://doi.org/10.1021/acsaom.5c00082https://doi.org/10.1021/acsaom.5c00082","url":null,"abstract":"Due to the unique electronic structure of rare-earth elements, Ce and Eu doping has emerged as an effective strategy to induce luminescence phenomena in rare-earth doped metal halides. This study investigates the luminescent properties of zero-dimensional (0D) lead-free metal halides, Cs3–xZn1–xCexCl5 (x = 0.03–0.15) and Cs3Zn1–xEuxCl5 (x = 0.03–0.18), focusing on the effects of rare-earth doping on their optoelectronic properties. Specifically, Ce doping at Zn sites results in long-wavelength ultraviolet (UVA) emission centered at 360 nm, while Eu doping leads to high-energy blue emission centered at 445 nm. The photoluminescence lifetimes for Cs2.91Zn0.91Ce0.09Cl5 and Cs3Zn0.85Eu0.15Cl5 are 4.12 and 5.47 μs, respectively. Furthermore, Cs3Zn0.85Eu0.15Cl5 was successfully utilized as a blue phosphor to fabricate a white light-emitting diode (WLED) by combining it with red and green phosphors. The WLED achieved a correlated color temperature (CCT) of 4628 K and a color rendering index (CRI) of 79.2, demonstrating its suitability for solid-state lighting applications. The robust UVA and blue emissions, coupled with their excellent optoelectronic performance, position these materials as promising candidates for advanced optoelectronic devices.","PeriodicalId":29803,"journal":{"name":"ACS Applied Optical Materials","volume":"3 5","pages":"1119–1128 1119–1128"},"PeriodicalIF":0.0,"publicationDate":"2025-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144114646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Self-Powered Mechanoluminescence-Based Mechanical Sensing Glove for Human-Machine Interaction 基于自供电机械发光的人机交互机械传感手套

ACS Applied Optical Materials Pub Date : 2025-05-14 DOI: 10.1021/acsaom.5c0012110.1021/acsaom.5c00121

Yunpeng Zhou, Yanyan Li*, Long Feng, Hongxin Song, Kai Ge Cheng, Lili Li, Wenya Pan, Shuaikang Zhu and Lei Zhao*,

{"title":"Self-Powered Mechanoluminescence-Based Mechanical Sensing Glove for Human-Machine Interaction","authors":"Yunpeng Zhou, Yanyan Li*, Long Feng, Hongxin Song, Kai Ge Cheng, Lili Li, Wenya Pan, Shuaikang Zhu and Lei Zhao*, ","doi":"10.1021/acsaom.5c0012110.1021/acsaom.5c00121","DOIUrl":"https://doi.org/10.1021/acsaom.5c00121https://doi.org/10.1021/acsaom.5c00121","url":null,"abstract":"Wearable electronic devices are increasingly vital in modern human-machine interaction (HMI), but existing flexible sensors face challenges like structural complexity, high costs, limited compatibility, and poor scalability. Here, we introduce an optical-mechanical wearable sensor device (OSWD) using synthesized mechanoluminescence (ML) material Ca10Li(PO4)7 (CLP) doped with Tb3+, Dy3+, and Mn2+, producing distinct green, yellow, and red emissions. The friction-induced, self-powered ML mechanism was validated and integrated into polydimethylsiloxane (PDMS), demonstrating excellent cyclic ML performance. The composite exhibits high sensitivity (relative sensitivity SR ≈ 1.13%), exceptional toughness, and wide strain adaptability (0.6–180%). By attaching the OSWD to a finger and coupling it with a TCS34725 RGB color sensor, finger-bending-induced ML signals effectively generate recognizable commands. Compared to traditional sensors, the OSWD significantly reduces manufacturing costs and enhances device portability, promoting broader integration potential. Moreover, its simple, lightweight design enables natural user interaction without restricting hand movements, overcoming limitations common in current wearable devices. In summary, our friction-induced, self-powered ML-based OSWD glove addresses key manufacturing and usability issues, advancing wearable HMI technologies for daily activities.","PeriodicalId":29803,"journal":{"name":"ACS Applied Optical Materials","volume":"3 5","pages":"1171–1182 1171–1182"},"PeriodicalIF":0.0,"publicationDate":"2025-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144114586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Reconfigurable Infrared (IR) Emissivity of VO2 Patterns Fabricated via Maskless Laser Writing for Adaptive IR Applications 用于自适应红外应用的无掩模激光写入制备的VO2图案的可重构红外发射率

ACS Applied Optical Materials Pub Date : 2025-05-14 DOI: 10.1021/acsaom.5c0011210.1021/acsaom.5c00112

Hemadri Bandhu*, and , Amit Verma,

{"title":"Reconfigurable Infrared (IR) Emissivity of VO2 Patterns Fabricated via Maskless Laser Writing for Adaptive IR Applications","authors":"Hemadri Bandhu*,  and , Amit Verma, ","doi":"10.1021/acsaom.5c0011210.1021/acsaom.5c00112","DOIUrl":"https://doi.org/10.1021/acsaom.5c00112https://doi.org/10.1021/acsaom.5c00112","url":null,"abstract":"Dynamic control of infrared (IR) emissivity is critical for applications such as adaptive thermal camouflage, radiative cooling, and smart coatings. Vanadium dioxide (VO2), a phase transition material, exhibits a temperature-driven insulator-to-metal transition, enabling reversible and actively tunable emissivity switching. In this work, we employ a maskless, lithography-free laser writing technique to fabricate VO2 patterns on vanadium (V) thin films, achieving precise spatial control of the emissivity through two different approaches. Our results demonstrate a wide passive emissivity modulation range from ∼0.1 to 0.9 along with reversible active emissivity switching in different ranges (maximum switching ∼0.8 to 0.3) at the VO2 transition temperature. To highlight the potential of this approach, we fabricate two thermally responsive checkerboard structures, one of which dynamically appears, while another disappears in IR imaging beyond the phase transition temperature. This scalable and precious laser writing method offers a powerful platform for adaptive IR camouflage, IR tags, anticounterfeiting, reconfigurable thermal management, IR scene generation, and energy-efficient smart surfaces.","PeriodicalId":29803,"journal":{"name":"ACS Applied Optical Materials","volume":"3 5","pages":"1162–1170 1162–1170"},"PeriodicalIF":0.0,"publicationDate":"2025-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144114509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0