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"Second breakdown" in transistors 晶体管的“二次击穿”
IRE Transactions on Electron Devices Pub Date : 1962-03-01 DOI: 10.1109/T-ED.1962.14960
H. Schafft, J. French
{"title":"\"Second breakdown\" in transistors","authors":"H. Schafft, J. French","doi":"10.1109/T-ED.1962.14960","DOIUrl":"https://doi.org/10.1109/T-ED.1962.14960","url":null,"abstract":"\"Second breakdown\" in transistors has been characterized as an abrupt reduction in VCE, at a collector current designated by IM, when the transistor is swept through its VCEvs ICcharacteristics. A critical review of the literature concerning this phenomenon and a more complete description of its characteristics are given. It appears that \"second breakdown\" is a more fundamental property of the transistor than has previously been thought. Each of the mechanisms thus far considered in the literature, in particular the \"pinch-in\" effect and p-n-p-n action, has been examined and found inadequate. The apparent dependence of the initiation of the phenomenon on the quantity of energy absorbed, and on the ambient temperature, indicates that it may be related to some thermal mechanism. This points to the importance of examining \"second breakdown\" in terms of energy dissipated rather than in terms of voltage or current as has been done to date.","PeriodicalId":293956,"journal":{"name":"IRE Transactions on Electron Devices","volume":"51 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1962-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126942832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 66
About scan magnification of TV picture tubes 关于电视显像管的扫描放大
IRE Transactions on Electron Devices Pub Date : 1962-03-01 DOI: 10.1109/T-ED.1962.14970
E. Gundert, H. Lotsch
{"title":"About scan magnification of TV picture tubes","authors":"E. Gundert, H. Lotsch","doi":"10.1109/T-ED.1962.14970","DOIUrl":"https://doi.org/10.1109/T-ED.1962.14970","url":null,"abstract":"In a television receiver the horizontal deflection is of critical importance because of the high deflection power. Recently various proposals have been published, according to which the electron beam is to be deflected over a small angle only, in order to diminish the deflection power. Subsequently this small deflection angle is to be increased by an electrostatic or magnetic lens. In the present paper, it is shown with the aid of general laws of electron optics that such a scan magnification by an electrostatic or magnetic lens necessarily causes a decrease of the resolution, and thereby, of the quality of the television picture, unless known possibilities of increasing the resolution are employed simultaneously. The calculation also affirms that with magnetic deflection, unlike electrostatic deflection, post-acceleration does not lead to a significant reduction in deflection power with unchanged resolution.","PeriodicalId":293956,"journal":{"name":"IRE Transactions on Electron Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1962-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130817381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Switching response of graded-base PN junction diodes 梯度基极PN结二极管的开关响应
IRE Transactions on Electron Devices Pub Date : 1962-03-01 DOI: 10.1109/T-ED.1962.14967
S.Y. Muto, S. Wang
{"title":"Switching response of graded-base PN junction diodes","authors":"S.Y. Muto, S. Wang","doi":"10.1109/T-ED.1962.14967","DOIUrl":"https://doi.org/10.1109/T-ED.1962.14967","url":null,"abstract":"This paper extends the earlier analysis by Kingston of the switching response of a uniform-base diode to a graded-base diode. It concerns the time required to switch a diode from a forward-biased to a reverse-biased condition. The current transient can be separated into two phases: 1) the constant current phase during which the carrier density at the junction changes gradually from a forward-biased to a reverse-biased condition, and 2) the nonconstant current phase during which the injected carriers stored in the base region gradually disappear. In the present analysis, it is found that in a graded-base diode where the impurity concentration decreases from the emitter junction towards the base contact, the time for the constant current phase is greatly shortened because of favorable initial carrier distribution. The effect is already significant if the impurity concentration changes by a factor from 3 to 1 from the emitter junction to the base contact. To shorten the nonconstant current phase, however, a much larger change of impurity concentration, say of the order from 500 to 1, from the emitter junction to the base contact is needed.","PeriodicalId":293956,"journal":{"name":"IRE Transactions on Electron Devices","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1962-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131509816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A broad-band slow-wave structure for a millimeter traveling-wave tube amplifier 毫米波行波管放大器的宽带慢波结构
IRE Transactions on Electron Devices Pub Date : 1962-03-01 DOI: 10.1109/T-ED.1962.14975
J. Hirano
{"title":"A broad-band slow-wave structure for a millimeter traveling-wave tube amplifier","authors":"J. Hirano","doi":"10.1109/T-ED.1962.14975","DOIUrl":"https://doi.org/10.1109/T-ED.1962.14975","url":null,"abstract":"A new filter-type slow-wave structure, which is considered as an interdigital line loaded with inductance in shunt, is described in this paper. The results of the cold-test study of the structure are presented in terms of the phase velocity and impedance measurements. For the structure studied, interaction takes place between multiple electron streams and the axial electric field of the +1 space harmonic. The circuit has broad-band properties of phase and interaction impedance as a circuit for a traveling-wave amplifier. The maximum deviation of the phase velocity for a 30 per cent bandwidth has a value on the order of ±0.3 per cent. The structure is suitable for use as a high-power amplifier operating with a 20 per cent bandwidth in the millimeter-wave region.","PeriodicalId":293956,"journal":{"name":"IRE Transactions on Electron Devices","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1962-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127552870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Minority carrier injection characteristics of the diffused emitter junction 扩散发射极结的少数载流子注入特性
IRE Transactions on Electron Devices Pub Date : 1962-03-01 DOI: 10.1109/T-ED.1962.14961
D. P. Kennedy, P. Murley
{"title":"Minority carrier injection characteristics of the diffused emitter junction","authors":"D. P. Kennedy, P. Murley","doi":"10.1109/T-ED.1962.14961","DOIUrl":"https://doi.org/10.1109/T-ED.1962.14961","url":null,"abstract":"For the double-diffused transistor, a one-dimensional analysis is presented on the minority carrier injection properties of a diffused emitter junction. This junction is bounded on one side by a reverse biased collector and on the other by an ohmic contact of arbitrary recombination velocity. Furthermore, arbitrary magnitudes of minority carrier lifetime are assumed in both the emitter and base regions of this semiconductor device. Injection efficiency characteristics are graphically illustrated throughout a wide range of physical and geometrical parameters. Assuming, for example, variations in the emitter junction depth, injection properties are demonstrated for transistors exhibiting a fixed collector location and also for transistors exhibiting a fixed base width. A comparison is also shown between the calculated minority carrier injection from this analysis and from other, more approximate, methods.","PeriodicalId":293956,"journal":{"name":"IRE Transactions on Electron Devices","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1962-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134471904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
Accurate noise measurements on transistors 对晶体管进行精确的噪声测量
IRE Transactions on Electron Devices Pub Date : 1962-03-01 DOI: 10.1109/T-ED.1962.14959
E. Chenette, A. van der Ziel
{"title":"Accurate noise measurements on transistors","authors":"E. Chenette, A. van der Ziel","doi":"10.1109/T-ED.1962.14959","DOIUrl":"https://doi.org/10.1109/T-ED.1962.14959","url":null,"abstract":"This paper is concerned with a method of noise measurement which permits improved accuracy by circumventing some of the problems of the usual comparison techniques. Results are presented of measurements of Ieqand Rnshowing good agreement between theory and experiment. It is suggested that noise measurements may be a very satisfactory method of determining the effective base resistance for inhomogeneous structures. The theoretical representation of the noise sources, including the effect of generation-recombination in the emitter-base region, is summarized in the appendix.","PeriodicalId":293956,"journal":{"name":"IRE Transactions on Electron Devices","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1962-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124232011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 31
Transferred electron amplifiers and oscillators 转移电子放大器和振荡器
IRE Transactions on Electron Devices Pub Date : 1962-02-01 DOI: 10.1109/JRPROC.1962.288025
C. Hilsum
{"title":"Transferred electron amplifiers and oscillators","authors":"C. Hilsum","doi":"10.1109/JRPROC.1962.288025","DOIUrl":"https://doi.org/10.1109/JRPROC.1962.288025","url":null,"abstract":"In some semiconductors the conduction band system has two minima separated by only a small energy, and the lower minimum has associated with it a smaller electron effective mass than the upper minimum. At high electric fields it should be possible to transfer electrons to the upper minimum where they will have a lower mobility. The conductivity of a homogeneous crystal bar can therefore decrease as the field is increased, and it is conceivable that a differential negative resistance could be obtained. The conditions needed for obtaining negative resistance are examined, and calculations made for GaSb and semi-insulating GaAs. It appears that negative resistances should be observable in both these materials.","PeriodicalId":293956,"journal":{"name":"IRE Transactions on Electron Devices","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1962-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124876048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 188
Impurity-density distribution in the base region of drift transistors 漂移晶体管基区杂质密度分布
IRE Transactions on Electron Devices Pub Date : 1961-11-01 DOI: 10.1109/T-ED.1961.14866
M. B. Das, A. Boothroyd
{"title":"Impurity-density distribution in the base region of drift transistors","authors":"M. B. Das, A. Boothroyd","doi":"10.1109/T-ED.1961.14866","DOIUrl":"https://doi.org/10.1109/T-ED.1961.14866","url":null,"abstract":"The nature of the impurity grading in the base of drift transistors is studied by measuring the dependence of the base transit time on collector voltage. Provided that modulation of collector-depletion layer width caused by change of collector voltage occurs only in the base material, as in the case of an alloyed collector, it is possible to deduce the base-region field parameterm=Delta V/(kT/q)from such transit-time measurements. By this means, the validity of assumed distributions of impurity density may be verified; in particular, it may be established whether the impurity grading approximates an exponential or a complementary error function (erfc) form. Results are given for a number of drift-transistor samples, most of which are believed to have undergone impurity diffusion into the base material from a constant surface concentration during fabrication. In all cases, however, interpretation of measured data indicates a base impurity-density distribution approximating exponential rather than erfc form to be present.","PeriodicalId":293956,"journal":{"name":"IRE Transactions on Electron Devices","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1961-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128124533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A millimicrosecond pulse-generator tube 微秒脉冲产生管
IRE Transactions on Electron Devices Pub Date : 1961-11-01 DOI: 10.1109/T-ED.1961.14864
W. Cornetet, J. Josenhans
{"title":"A millimicrosecond pulse-generator tube","authors":"W. Cornetet, J. Josenhans","doi":"10.1109/T-ED.1961.14864","DOIUrl":"https://doi.org/10.1109/T-ED.1961.14864","url":null,"abstract":"This paper describes the theory and testing of a 100- Mc repetition-rate millimicrosecond pulse-generator tube utilizing klystron bunching. The optimum operation of the generator was obtained with a drift-tube transit angle Θ0of approximately 150°; depth of modulationalpha = V_{1}/V_{0} = 1; and the reduced plasma-anglePhi_{q}was less than 20°. Observations and data were determined with an Edgerton, Germeshausen and Grier traveling-wave oscilloscope and a comparison measurement technique. The generator has a measured pulse rise time of 130 µµsec (0-100 per cent), and a pulse duration of 300 µµsec at the half-voltage point. A pulse height of 20 volts on a 50-ohm coaxial line is possible. The analysis applied in predicting the shape of the pulse was based on large signal ballistic bunching theory and a quantized collector gap theory. A comparison between analysis and measurement indicates an error of about 20 per cent. Theory predicts that little improvement can be made in the pulse duration, but the pulse rise time may be improved with increased circuit complexity.","PeriodicalId":293956,"journal":{"name":"IRE Transactions on Electron Devices","volume":"161 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1961-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115025096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Our sincere thanks to Dr. Earl Steele 衷心感谢厄尔·斯蒂尔博士
IRE Transactions on Electron Devices Pub Date : 1961-11-01 DOI: 10.1109/T-ED.1961.14858
W.A. Adock
{"title":"Our sincere thanks to Dr. Earl Steele","authors":"W.A. Adock","doi":"10.1109/T-ED.1961.14858","DOIUrl":"https://doi.org/10.1109/T-ED.1961.14858","url":null,"abstract":"","PeriodicalId":293956,"journal":{"name":"IRE Transactions on Electron Devices","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1961-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131559258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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