{"title":"Polycrystalline thin film CdTe solar cells","authors":"D. A. Cusano","doi":"10.1109/T-ED.1962.15032","DOIUrl":"https://doi.org/10.1109/T-ED.1962.15032","url":null,"abstract":"","PeriodicalId":293956,"journal":{"name":"IRE Transactions on Electron Devices","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1962-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123030734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Schottky barriers on silicon","authors":"R. W. Soshea, M. Atalla","doi":"10.1109/T-ED.1962.15063","DOIUrl":"https://doi.org/10.1109/T-ED.1962.15063","url":null,"abstract":"","PeriodicalId":293956,"journal":{"name":"IRE Transactions on Electron Devices","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1962-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133868398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Magneto-injection devices","authors":"I. Melngailis, R. Rediker","doi":"10.1109/T-ED.1962.15037","DOIUrl":"https://doi.org/10.1109/T-ED.1962.15037","url":null,"abstract":"","PeriodicalId":293956,"journal":{"name":"IRE Transactions on Electron Devices","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1962-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132621681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"An optoelectronic relay","authors":"J. Iwersen, L. D’asaro, E. Labate, P. Perron","doi":"10.1109/T-ED.1962.15029","DOIUrl":"https://doi.org/10.1109/T-ED.1962.15029","url":null,"abstract":"","PeriodicalId":293956,"journal":{"name":"IRE Transactions on Electron Devices","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1962-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123584927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Ultrasonic amplification in semi-metals","authors":"W. Dumke, R. Haering","doi":"10.1109/T-ED.1962.15041","DOIUrl":"https://doi.org/10.1109/T-ED.1962.15041","url":null,"abstract":"","PeriodicalId":293956,"journal":{"name":"IRE Transactions on Electron Devices","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1962-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123970604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Avalanche breakdown characteristics of a diffused P-N junction","authors":"D. P. Kennedy, R. R. O'Brien","doi":"10.1109/T-ED.1962.15023","DOIUrl":"https://doi.org/10.1109/T-ED.1962.15023","url":null,"abstract":"A one-dimensional analysis is presented on the avalanche breakdown characteristics of a diffused p-n junction diode. By numerically integrating the carrier ionization rate in a junction space-charge layer, avalanche breakdown voltage is calculated for diffused diodes of silicon and germanium; this voltage is graphically illustrated throughout a range of parameters applicable to most practical situations. In addition, for calculating the maximum cutoff frequency of varactor diodes, junction capacity is similarly illustrated assuming the device is biased to avalanche breakdown. From these illustrations, and from an accompanying nomograph which relates the physical constants of a junction to its impurity atom gradient, the above parameters can be readily established without additional calculations. Further, examples are also presented to demonstrate the reduction of breakdown voltage resulting from a rapid increase of conductivity within the space-charge layer of a diffused p-n junction; this situation approximates many epitaxial and double diffused structures.","PeriodicalId":293956,"journal":{"name":"IRE Transactions on Electron Devices","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1962-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130936725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Electrical breakdown phenomena in gold-doped silicon","authors":"J. Gibbons, V. Reddi","doi":"10.1109/T-ED.1962.15066","DOIUrl":"https://doi.org/10.1109/T-ED.1962.15066","url":null,"abstract":"","PeriodicalId":293956,"journal":{"name":"IRE Transactions on Electron Devices","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1962-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131763973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Experiments with a new type adiabatic crossed-field gun","authors":"T. A. Midford, G. Kino","doi":"10.1109/T-ED.1962.15016","DOIUrl":"https://doi.org/10.1109/T-ED.1962.15016","url":null,"abstract":"In this paper experiments with a \"long\" crossed-field gun, designed by a method given by Kino, are described. This gun yielded the predicted value of current, but the other characteristics of the beam were not in accordance with the results of the theory. Experiments were carried out from which it may be concluded that there are RF instabilities present in the beam, instabilities which grow in the drift region and are generated at the cathode. The rate of growth of these instabilities is of the same order as the rate of growth of RF fields given by the theory of McFarlane and Hay.","PeriodicalId":293956,"journal":{"name":"IRE Transactions on Electron Devices","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1962-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134121454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Theory of noise in field effect transistors","authors":"A. Ziel","doi":"10.1109/T-ED.1962.15051","DOIUrl":"https://doi.org/10.1109/T-ED.1962.15051","url":null,"abstract":"","PeriodicalId":293956,"journal":{"name":"IRE Transactions on Electron Devices","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1962-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123406573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A cathode-ray switch tube with 11 channels of electron multiplication","authors":"R. Kalibjian","doi":"10.1109/T-ED.1962.15019","DOIUrl":"https://doi.org/10.1109/T-ED.1962.15019","url":null,"abstract":"An 11-channel switch tube with 5 stages of electron multiplication has been developed. In some applications the switch tube will replace the camera-oscilloscope system for recording the rise times of electrical signals. This tube will be used to convert wide-band information from a single channel into eleven channels of lower bandwidth information which can be transmitted over standard telephone cables for telemetering operations. Venetian-blind dynodes are used for the multiplier structure. Each channel is defined by a pair of louvers on the dynode disk. U-shaped shields, which just straddle the louver edge of the preceding dynode, are used to minimize crosstalk. The channel width is 0.120 inch or a total length of 1.32 in for the 11 channels. The collector system provides a method for equalizing the gain of all the channels. The switch tube is 3 in in diameter and 24 in in length. Operating at a 4-kv beam potential with 2-µa beam current, the tube provides 20 ma of output current, with less than 5 per cent crosstalk to adjacent channels. The electron optics and the performance of the tube are described.","PeriodicalId":293956,"journal":{"name":"IRE Transactions on Electron Devices","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1962-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126450621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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