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IRE Transactions on Electron Devices最新文献

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Photoconductive material design for high-speed el-pc computer elements 高速el-pc计算机元件的光导材料设计
IRE Transactions on Electron Devices Pub Date : 1962-11-01 DOI: 10.1109/T-ED.1962.15034
J.E. Johnson
{"title":"Photoconductive material design for high-speed el-pc computer elements","authors":"J.E. Johnson","doi":"10.1109/T-ED.1962.15034","DOIUrl":"https://doi.org/10.1109/T-ED.1962.15034","url":null,"abstract":"","PeriodicalId":293956,"journal":{"name":"IRE Transactions on Electron Devices","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1962-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129582256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Heterojunctions in InP-GaAs
IRE Transactions on Electron Devices Pub Date : 1962-11-01 DOI: 10.1109/T-ED.1962.15057
W. Oldham, A. Milnes
{"title":"Heterojunctions in InP-GaAs","authors":"W. Oldham, A. Milnes","doi":"10.1109/T-ED.1962.15057","DOIUrl":"https://doi.org/10.1109/T-ED.1962.15057","url":null,"abstract":"","PeriodicalId":293956,"journal":{"name":"IRE Transactions on Electron Devices","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1962-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130594753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An adaptive semiconductor device 一种自适应半导体器件
IRE Transactions on Electron Devices Pub Date : 1962-11-01 DOI: 10.1109/T-ED.1962.15043
J. Kessler
{"title":"An adaptive semiconductor device","authors":"J. Kessler","doi":"10.1109/T-ED.1962.15043","DOIUrl":"https://doi.org/10.1109/T-ED.1962.15043","url":null,"abstract":"","PeriodicalId":293956,"journal":{"name":"IRE Transactions on Electron Devices","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1962-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116385139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
An analysis of a circuit for the generation of high-order harmonics using an ideal nonlinear capacitor 分析了用理想非线性电容产生高次谐波的电路
IRE Transactions on Electron Devices Pub Date : 1962-11-01 DOI: 10.1109/T-ED.1962.15024
D. Hedderly
{"title":"An analysis of a circuit for the generation of high-order harmonics using an ideal nonlinear capacitor","authors":"D. Hedderly","doi":"10.1109/T-ED.1962.15024","DOIUrl":"https://doi.org/10.1109/T-ED.1962.15024","url":null,"abstract":"A particular harmonic generator circuit using an ideal nonlinear capacitor is analyzed and theoretical expressions are obtained for the loss involved in generating a high-order harmonic. The harmonic energy is developed in a load resistor either as an exponentially decaying sine wave or as a pulse. The analysis is valid for harmonics of about the tenth or greater. The results are presented in a graphical form that allows the losses involved to be found easily and it is thus shown that the minimum loss in generating a high-order harmonic by this circuit is about 8.5 db independent of the order of the harmonic. The degree to which a charge storage diode approximates to an ideal nonlinear capacitor is then discussed and some experimental results using such a diode are presented.","PeriodicalId":293956,"journal":{"name":"IRE Transactions on Electron Devices","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1962-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116835113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Avalanche breakdown-double injection induced negative resistance in semiconductors 雪崩击穿-双注入诱导半导体负电阻
IRE Transactions on Electron Devices Pub Date : 1962-11-01 DOI: 10.1109/T-ED.1962.15038
S. Steele, A. Ando, L. Lampert
{"title":"Avalanche breakdown-double injection induced negative resistance in semiconductors","authors":"S. Steele, A. Ando, L. Lampert","doi":"10.1109/T-ED.1962.15038","DOIUrl":"https://doi.org/10.1109/T-ED.1962.15038","url":null,"abstract":"Current-controlled negative resistances have been observed in a variety of point-contact Ge diodes. Experiments were done at 300°K and 243°K, using both dc and pulsed currents. In these experiments both contacts are of the ohmic, non-injecting type. The effect has been seen in both n and p -type Ge single crystals having resistivities that range from 0.1 to 50 ohm-cm. The frequency of the relaxation oscillations resulting from the negative resistance has ranged from 1 KG to 10 MC depending on the cathode-anode spacing and the external capacitance used. Analysis shows that thermal effects can not explain these results. The negative resistance is believed to be due to the two carrier current flow (double injection) in the bulk material after avalanche injection has been produced at the point contact. This explanation for the negative resistance differs from those previously proposed and allows predictions of the I-V curve as well as frequency limitations. Experiments with different sized points, varying pul...","PeriodicalId":293956,"journal":{"name":"IRE Transactions on Electron Devices","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1962-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114075257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 27
Anomalous current in GaAs alloy diodes 砷化镓合金二极管中的异常电流
IRE Transactions on Electron Devices Pub Date : 1962-11-01 DOI: 10.1109/T-ED.1962.15062
R. Rediker, T. M. Quist
{"title":"Anomalous current in GaAs alloy diodes","authors":"R. Rediker, T. M. Quist","doi":"10.1109/T-ED.1962.15062","DOIUrl":"https://doi.org/10.1109/T-ED.1962.15062","url":null,"abstract":"","PeriodicalId":293956,"journal":{"name":"IRE Transactions on Electron Devices","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1962-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126989483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
1/f noise in surface potential controlled junctions 1/f表面电位控制结噪声
IRE Transactions on Electron Devices Pub Date : 1962-11-01 DOI: 10.1109/T-ED.1962.15050
P. Lauritzen, C. Sah
{"title":"1/f noise in surface potential controlled junctions","authors":"P. Lauritzen, C. Sah","doi":"10.1109/T-ED.1962.15050","DOIUrl":"https://doi.org/10.1109/T-ED.1962.15050","url":null,"abstract":"","PeriodicalId":293956,"journal":{"name":"IRE Transactions on Electron Devices","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1962-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122062870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A high-frequency ultrasonic transducer 一种高频超声换能器制造技术
IRE Transactions on Electron Devices Pub Date : 1962-11-01 DOI: 10.1109/T-ED.1962.15042
N. F. Foster
{"title":"A high-frequency ultrasonic transducer","authors":"N. F. Foster","doi":"10.1109/T-ED.1962.15042","DOIUrl":"https://doi.org/10.1109/T-ED.1962.15042","url":null,"abstract":"","PeriodicalId":293956,"journal":{"name":"IRE Transactions on Electron Devices","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1962-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122837865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cooling of the slow space-charge wave with application to the traveling-wave tube 慢空间电荷波的冷却及其在行波管中的应用
IRE Transactions on Electron Devices Pub Date : 1962-11-01 DOI: 10.1109/T-ED.1962.15018
D. C. Forster
{"title":"Cooling of the slow space-charge wave with application to the traveling-wave tube","authors":"D. C. Forster","doi":"10.1109/T-ED.1962.15018","DOIUrl":"https://doi.org/10.1109/T-ED.1962.15018","url":null,"abstract":"Coupled-mode theory has been used to demonstrate that the inclusion of higher order mixing products does not seriously affect the performance of the space-charge-wave noise exchanger recently proposed by Sturrock[3]. Estimates of the effects of the pump modulation (necessarily induced on the electron stream in the exchanger) on the gain and noise performance of a traveling-wave amplifier are obtained. Noise temperatures on the order of 100 °K are indicated if the cathode temperature is assumed to be 1000 °K.","PeriodicalId":293956,"journal":{"name":"IRE Transactions on Electron Devices","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1962-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115737278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Thermal instability in power transistors 功率晶体管的热不稳定性
IRE Transactions on Electron Devices Pub Date : 1962-11-01 DOI: 10.1109/T-ED.1962.15045
R. Scarlett, W. Shockley
{"title":"Thermal instability in power transistors","authors":"R. Scarlett, W. Shockley","doi":"10.1109/T-ED.1962.15045","DOIUrl":"https://doi.org/10.1109/T-ED.1962.15045","url":null,"abstract":"","PeriodicalId":293956,"journal":{"name":"IRE Transactions on Electron Devices","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1962-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127207580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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