2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)最新文献

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Numerical simulation investigation of near-field enhancement and field-induced effect on nanoprobe irradiated by annular laser beam 环形激光束辐照纳米探针近场增强及场致效应的数值模拟研究
2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2017-07-01 DOI: 10.1109/NANO.2017.8117405
Li-jun Yang, Xiwen Lu, Zhan Yang, Yang Wang
{"title":"Numerical simulation investigation of near-field enhancement and field-induced effect on nanoprobe irradiated by annular laser beam","authors":"Li-jun Yang, Xiwen Lu, Zhan Yang, Yang Wang","doi":"10.1109/NANO.2017.8117405","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117405","url":null,"abstract":"A simulation study of near-field enhancement on nanoprobe irradiated by annular laser beam is reported. Various nanofabrication, such as nano-welding, nano-manipulation and nano-etching, are produced on metal, semiconductor films and bulk by using the enhanced near-field underneath a probe irradiated by a laser beam. The simulation results show that comparing with the traditional single Gaussian beam, energy distribution of annular laser beam is much more uniform. The results indicate that near-field enhancement on nanoprobe irradiated by annular laser beam is much stronger than by single Gaussian beam. In addition, the relationship between wavelength and the field-induced effect such as temperature, stress and displacement in Z axis is explored. The results show that the shorter the wavelength, the higher the temperature of the probe and the greater the change in stress and deformation. Based on the simulation of the near field enhancement and the field-induced effect, a new scheme combining with annular laser beam and a nanoprobe is anticipated in nano-fabrication.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"2015 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121329681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design, fabrication, characterization and packaging of bottom gate and nano-porous TiO2 based FET 底栅和纳米多孔TiO2基FET的设计、制造、表征和封装
2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2017-07-01 DOI: 10.1109/NANO.2017.8117298
Priyanka Dwivedi, N. Chauhan, Veerendra Dhyani, D. S. Kumar, S. Dhanekar
{"title":"Design, fabrication, characterization and packaging of bottom gate and nano-porous TiO2 based FET","authors":"Priyanka Dwivedi, N. Chauhan, Veerendra Dhyani, D. S. Kumar, S. Dhanekar","doi":"10.1109/NANO.2017.8117298","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117298","url":null,"abstract":"Bottom gate field effect transistors (FETs) with nano-porous TiO2 as channel has been designed, fabricated, characterized and packaged. The fabrication process is simple, scalable and reproducible. Reactive RF sputtering and lift off process was used for depositing and patterning TiO2 respectively. TiO2 was annealed to tune its crystallinity from amorphous to anatase. Microscopy study of TiO2 film reveals nano-porous morphology which improves the surface properties and makes it useful for sensing applications. The transistor characteristics of FET show p-channel behavior and the device has been packaged onto headers for testing it in presence of analytes.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127604236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Evaluating the quality of service of the Internet of Bio-Nano Things in possible scenarios of applicability in the nanomedicine 评价生物纳米物联网在纳米医学可能应用场景下的服务质量
2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2017-07-01 DOI: 10.1109/NANO.2017.8117361
H. Nieto-Chaupis
{"title":"Evaluating the quality of service of the Internet of Bio-Nano Things in possible scenarios of applicability in the nanomedicine","authors":"H. Nieto-Chaupis","doi":"10.1109/NANO.2017.8117361","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117361","url":null,"abstract":"Once the Internet of Bio-Nano Things (IoBNT) is already running, one important aspect that must be established is the estimation of parameters of the quality of service (QoS). From the view of the end-user, QoS should be high enough in order to guarantee an excellent applicability of the IoBNT, in particular when humans are part of the network and where efficient techniques of nanomedicine are foresen. In this paper, we present a scheme where the QoS is calculated when the IoBNT is applied for sensing abnormalities in kidney. For this end the following key points are considered: (i) sensing of charged proteins through THz waves, (ii) reception by bio-cyber device and subsequent emission of MHz waves, (iii) reception by smartphone, (iv) reception and storing of information at the cloud, (v) exchanging information with server and world-wide-web, and (vi) final reception and treatment of data by the enduser. The estimation of the full QoS has paid attention to the atomic absorption of THz waves by water in human tissue, fact which might degrade the optimal surveillance of the sensing of proteins and which is translated as the main source of errors. The full nonlinear expression is numerically evaluated by obtaining in average a QoS of order of 90±8%.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126562677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Prediction of mechanical properties for defective monolayer MoS2 with single molybdenum vacancy defects using molecular dynamics simulations 用分子动力学模拟方法预测含有单钼空位缺陷的缺陷单层MoS2的力学性能
2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2017-07-01 DOI: 10.1109/NANO.2017.8117324
Minglin Li, Yaling Wan, Weidong Wang
{"title":"Prediction of mechanical properties for defective monolayer MoS2 with single molybdenum vacancy defects using molecular dynamics simulations","authors":"Minglin Li, Yaling Wan, Weidong Wang","doi":"10.1109/NANO.2017.8117324","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117324","url":null,"abstract":"It is revealed by recent experimental and theoretical nanoindentation studies that the low concentration of monovacancy produces an abnormal noticeable stiffening effect on graphene sheets, which depending on the defect type. As for graphene-like quasi-two dimensional (2D) nanomaterials, the single-layer molybdenum disulfide (SLMoS2) has intrinsic structural defects that are distinct to graphene. Therefore, it is intriguing to investigate if any kind of defects will lead to such unique effect on the mechanical properties of SLMoS2, including the elasticity and strength. Following our preliminary studies on the VMoS3 point defect, herein, we perform molecular dynamics simulations to look into the effect of the low concentration of single molybdenum vacancy defects on the mechanical properties of SLMoS2, under uniaxial tensile tests. The defect fractions of the single Mo vacancy varying from 0.1% to 1.0% are considered in our works, together with the random and regular vacancy distributions. Single molybdenum vacancy defects are found, as common intuition would suggest, to reduce the mechanical properties of SLMoS2, including the elastic modulus and tensile strength. The effect of chirality on the mechanical properties of the SLMoS2 is also discussed in the present work.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131980284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Design and fabrication of Si3N4 surface normal photonic crystal filters and reflectors 氮化硅表面法向光子晶体滤光器和反射器的设计与制造
2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2017-07-01 DOI: 10.1109/NANO.2017.8117435
F. Chowdhury, X. Ge, Deyin Zhao, Weidong Zhou
{"title":"Design and fabrication of Si3N4 surface normal photonic crystal filters and reflectors","authors":"F. Chowdhury, X. Ge, Deyin Zhao, Weidong Zhou","doi":"10.1109/NANO.2017.8117435","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117435","url":null,"abstract":"We present the design and fabrication of surface normal photonic crystal high Q Si<inf>3</inf>N<inf>4</inf> filter on quartz and high performance SÌ3N4 suspended reflectors at near infrared. We report a Si<inf>3</inf>N<inf>4</inf> filter on quartz with a quality factor of over 27000. We also report a 99% peak reflection from fabricated Si<inf>3</inf>N<inf>4</inf> reflectors with reflection band of 20 nm.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132421111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A comparative performance analysis of 10 nm Si nanowire and carbon nanotube field effect transistors 10纳米硅纳米线与碳纳米管场效应晶体管的性能对比分析
2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2017-07-01 DOI: 10.1109/NANO.2017.8117443
Imtiaj Khan, O. Morshed, S. M. Mominuzzaman
{"title":"A comparative performance analysis of 10 nm Si nanowire and carbon nanotube field effect transistors","authors":"Imtiaj Khan, O. Morshed, S. M. Mominuzzaman","doi":"10.1109/NANO.2017.8117443","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117443","url":null,"abstract":"Both Carbon Nanotube and Silicon Nanowire are emerging as promising materials for the development of next generation electronic devices. Our focus is mainly on the comparative study of Silicon Nanowire Field Effect Transistor (SiNW-FET) and Carbon Nanotube Field Effect Transistor (CNT-FET). In this work, we have simulated an n-type single walled CNT-FET and a SiNW-FET. A brief comparison between the transconductances of both types of devices due to the applied strain has been studied where SiNW-FET shows incremental change in transconductance which happens to decrease for CNT-FET for lower input voltage range. Afterwards, we have observed the velocity vs applied electric field curves for both CNT-FET and SiNW-FET. It has been shown that although SiNW-FET has lower saturation velocity than CNT-FET, it can be improved by applying tensile strain. Finally, the direct tunneling gate leakage currents for CNT-FET and SiNW-FET have been investigated, where CNT-FET has been proved to be a better choice for gate leakage reduction.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134404379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Anomalous electrical response in ethanol-adsorbed zinc oxide thin films under visible light 乙醇吸附氧化锌薄膜在可见光下的异常电响应
2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2017-07-01 DOI: 10.1109/NANO.2017.8117289
Benjamin Barnes, K. Das
{"title":"Anomalous electrical response in ethanol-adsorbed zinc oxide thin films under visible light","authors":"Benjamin Barnes, K. Das","doi":"10.1109/NANO.2017.8117289","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117289","url":null,"abstract":"In this paper we report a unique electrical response of ethanol-adsorbed ZnO films subjected to a constant potential difference. Current measurements were obtained in both dark and illuminated conditions. A significant delay in achieving saturation current was observed indicating a nonlinear and time varying effective resistance; a time-dependent equation describing this behavior was developed, allowing the calculation of a time constant for the transition regime. To determine the role of the surface properties in this behavior, microwave plasma was used to etch the ZnO film by varying degrees, resulting in an enhancement of the resistance switching for extended etching times.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127566753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermal boundary conductance of the MOS2-SiO2 interface MOS2-SiO2界面的热边界电导
2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2017-07-01 DOI: 10.1109/NANO.2017.8117371
S. Suryavanshi, A. Gabourie, A. Farimani, E. Yalon, E. Pop
{"title":"Thermal boundary conductance of the MOS2-SiO2 interface","authors":"S. Suryavanshi, A. Gabourie, A. Farimani, E. Yalon, E. Pop","doi":"10.1109/NANO.2017.8117371","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117371","url":null,"abstract":"We investigate heat conduction across the interface of a monolayer semiconductor and its supporting substrate using molecular dynamics (MD) simulations. For the first time, we show that for the interface between MoS2 and SiO2, thermal boundary conductance (TBC) is 15.5 ± 1.5 MWK<sup>−1</sup>m<sup>−2</sup>. The TBC is found to increase proportionally with the strength of the van der Waals interactions and is largely independent of temperature between 200 and 400 K. We also find that bi- and tri-layer MoS<inf>2</inf> on SiO<inf>2</inf> have somewhat higher TBC compared to single-layer MoS<inf>2</inf> on SiO<inf>2</inf>. We compare the TBC simulation results with experimental data from Raman thermometry, finding close agreement between simulation and experiments.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132989353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Mixed protein templated iron-nanoclusters exhibit photoluminescence in the visible and near-infrared region 混合蛋白模板铁纳米团簇在可见光和近红外区表现出光致发光
2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2017-07-01 DOI: 10.1109/NANO.2017.8117444
R. E. Jimenez, Nile J. Bunce, Zhiwei Peng, YuHuang Wang, R. Gupta, Shashi P. Kama
{"title":"Mixed protein templated iron-nanoclusters exhibit photoluminescence in the visible and near-infrared region","authors":"R. E. Jimenez, Nile J. Bunce, Zhiwei Peng, YuHuang Wang, R. Gupta, Shashi P. Kama","doi":"10.1109/NANO.2017.8117444","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117444","url":null,"abstract":"Here we demonstrate the first successful synthesis of photoluminescent, water-soluble iron (Fe) nanoclusters (NCs) using the mixed proteins of an aqueous egg white (EW) solution. High resolution transmission electron micrographs (HR TEM) of NCs synthesized from a 5mM FeCl3 solution show the cluster sizes ranging from 1.6nm to 5.8nm with the most abundant size being 2.2nm. The energy dispersive x-ray spectra (EDS) confirm the clusters to be composed of Fe atoms. These newly synthesized iron nanoclusters (EW:FeNCs) exhibit strong photoluminescence in the visible and near-infrared (IR) regions upon excitation with ultra-violet (UV) light. The EW:FeNCs exhibit photoluminescence peaks at 450 nm and 845 nm with excitation by UV light at 374nm and 360nm, respectively. The EW:FeNCs also exhibit strong fluorescence emission when excited at 365nm with an average Imax of 444nm. However, this emission is masked by the fluorescence of the templating-protein, making a definitive assignment difficult. These novel EW:FeNCs exhibit remarkable chemical and photostability in addition to moderate thermal stability and can be used in a wide range of imaging and sensing applications.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115208871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Polyvinyl chloride-coated interdigitated microelectrode array to detect water quality towards IoT applications 面向物联网应用的聚氯乙烯涂层交叉指状微电极阵列水质检测
2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2017-07-01 DOI: 10.1109/NANO.2017.8117348
Yuchen Liang, Yang Liu, Brandi Kirkpatrick, F. Song, Leo Xue, Wendy Sun, Ran Liu, Jun Tao, Zeng Xuan, Dian Zhou, Walter Hu
{"title":"Polyvinyl chloride-coated interdigitated microelectrode array to detect water quality towards IoT applications","authors":"Yuchen Liang, Yang Liu, Brandi Kirkpatrick, F. Song, Leo Xue, Wendy Sun, Ran Liu, Jun Tao, Zeng Xuan, Dian Zhou, Walter Hu","doi":"10.1109/NANO.2017.8117348","DOIUrl":"https://doi.org/10.1109/NANO.2017.8117348","url":null,"abstract":"We apply interdigitated microelectrode array (IDA) sensors for water quality monitoring. IDA sensors show a linear capacitive response to solution conductivity with no pH sensitivity. Device coated with a ClO− selective layer also detects free chlorine with good sensitivity and specificity over varieties of ions.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115523922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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