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1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers最新文献

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VLSI lithography for the 80s 80年代的VLSI光刻技术
1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1982.1156305
R. Joy, L. Terman
{"title":"VLSI lithography for the 80s","authors":"R. Joy, L. Terman","doi":"10.1109/ISSCC.1982.1156305","DOIUrl":"https://doi.org/10.1109/ISSCC.1982.1156305","url":null,"abstract":"Progress in VLSI depends upon continuing improvement in lithography. While optical lithography is dominant at present, the movement to micron and sub-mlcron resolution with commensurate overlay presents severe challenges. Already, limitations due to the wavelength of light are being encountered, and there are proponents of short wavelength radiation technologies using x-ray and E-beams. The panel will discuss the alternatives and compare their capabilities and limitations.","PeriodicalId":291836,"journal":{"name":"1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"260 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115875445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An X-band dielectrically-stabilized FET source 一种x波段介电稳定场效应管源
1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1982.1156301
J. Seligman
{"title":"An X-band dielectrically-stabilized FET source","authors":"J. Seligman","doi":"10.1109/ISSCC.1982.1156301","DOIUrl":"https://doi.org/10.1109/ISSCC.1982.1156301","url":null,"abstract":"A thin film hybrid GaAs FET (chip) oscillator, stabilized with a ceramic dielectric resonator for use in military avionic equipment, will be described. Frequency stability of better than ± 2 PPM/C° has been achieved with an output of 5-10mW, while operating at a frequency near 12GHz.","PeriodicalId":291836,"journal":{"name":"1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114539399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 16K E2PROM 16k的e2prom
1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1982.1156403
Giora Yaron, Mark EbeI, Jayasimha Prasad, Bruce Leong
{"title":"A 16K E2PROM","authors":"Giora Yaron, Mark EbeI, Jayasimha Prasad, Bruce Leong","doi":"10.1109/ISSCC.1982.1156403","DOIUrl":"https://doi.org/10.1109/ISSCC.1982.1156403","url":null,"abstract":"A 16K floating-gate thin oxide (<150Å) E<sup>2</sup>PROM utilizing a single direct wafer stepper masking step for the definition of the electron tunneling area (<tex>1.5×1.5μ^{2}</tex>) will be discussed. Device requires only a dc level V<inf>pp</inf>signal for its operation and features threshold bit mapping.","PeriodicalId":291836,"journal":{"name":"1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115299706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A 16b monolithic bipolar DAC 一个16b单片双极DAC
1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1982.1156395
T. Guy, L. Trythall
{"title":"A 16b monolithic bipolar DAC","authors":"T. Guy, L. Trythall","doi":"10.1109/ISSCC.1982.1156395","DOIUrl":"https://doi.org/10.1109/ISSCC.1982.1156395","url":null,"abstract":"This paper will discuss a laser-trimmed 16b monolithic DAC fabricated with a DI bipolar process, affording monotonicity over a0-70°C temperature range.","PeriodicalId":291836,"journal":{"name":"1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"228 1-4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114107528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
The data converter world above 12b 12b以上的数据转换器世界
1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1982.1156376
R. Blauschild
{"title":"The data converter world above 12b","authors":"R. Blauschild","doi":"10.1109/ISSCC.1982.1156376","DOIUrl":"https://doi.org/10.1109/ISSCC.1982.1156376","url":null,"abstract":"The market for high accuracy data converters has traditionally been served by expensive modules and hybrids, limiting typical applications to low volume markets such as process control, instrumentation and display systems. New technologies and design techniques are emerging, however, which promise to expand the capabilities of monolithic converters to better than 0.01% nonlinearity. The availability of low-cost converters with such performance should greatly expand the range of potential applications . . . The panel will discuss the specifications for various markets and the impact of monolithics on those markets. Technological questions such as testing and performance limitations for data converters will be covered, using existing as well as future technologies and topologies.","PeriodicalId":291836,"journal":{"name":"1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125185447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A monolithic audio spectrum analyzer for speech recognition systems 用于语音识别系统的单片音频频谱分析仪
1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1982.1156318
Lyon Lin, Hsin-fu Tseng, D. Cox, R. Runge, D. Conrad
{"title":"A monolithic audio spectrum analyzer for speech recognition systems","authors":"Lyon Lin, Hsin-fu Tseng, D. Cox, R. Runge, D. Conrad","doi":"10.1109/ISSCC.1982.1156318","DOIUrl":"https://doi.org/10.1109/ISSCC.1982.1156318","url":null,"abstract":"A speech recognition monolithic audio spectrum analyzer, using NMOS switched capacitor filter technology, will be covered. Chip consists of 16 channels, each containing a bandpass filter, half-wave rectifier and low-pass filter to detect the frequency components of the voice signal.","PeriodicalId":291836,"journal":{"name":"1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133042620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
A 32b VLSI system 32b VLSI系统
1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1982.1156356
J. Beyers, L. Dohse, J. Fucetola, M. Kolesar, C. Lob, D. Maitland, A. Malhotra, S. Seccombe, J. Wheeler, E. Zeller
{"title":"A 32b VLSI system","authors":"J. Beyers, L. Dohse, J. Fucetola, M. Kolesar, C. Lob, D. Maitland, A. Malhotra, S. Seccombe, J. Wheeler, E. Zeller","doi":"10.1109/ISSCC.1982.1156356","DOIUrl":"https://doi.org/10.1109/ISSCC.1982.1156356","url":null,"abstract":"A fully integrated 32b VLSI processor system, consisting of a set of 6 VLSI chips containing up to 660,000 transistors, fabricated in a 1μ MOS technology, will be described, with emphasis on the memory sub-system.","PeriodicalId":291836,"journal":{"name":"1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"196 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132567058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Test/characterization procedures for high density silicon RAMs 高密度硅ram的测试/表征程序
1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1982.1156387
P. Gangatirkar, R. Presson, L. Rosner
{"title":"Test/characterization procedures for high density silicon RAMs","authors":"P. Gangatirkar, R. Presson, L. Rosner","doi":"10.1109/ISSCC.1982.1156387","DOIUrl":"https://doi.org/10.1109/ISSCC.1982.1156387","url":null,"abstract":"Diagnostic procedures which identify and quantify circuit marginalities and process sensitivities of DRAMs will be discussed. The use of fail counts, bit fail maps and parametric data in the development of the 32, 36 and 64Kb RAMs will be described.","PeriodicalId":291836,"journal":{"name":"1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133508600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
A hybrid integrated trunk and subscriber line interface 混合集成中继和用户线路接口
1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1982.1156333
P. Davis, F. Crigler, D. Spires, D. Aull
{"title":"A hybrid integrated trunk and subscriber line interface","authors":"P. Davis, F. Crigler, D. Spires, D. Aull","doi":"10.1109/ISSCC.1982.1156333","DOIUrl":"https://doi.org/10.1109/ISSCC.1982.1156333","url":null,"abstract":"A two-chip hybrid integrated trunk and subscriber line interface has been fabricated for voice and data applications. This paper will discuss features including a programmable battery feed with lightning protection, battery-reversal signaling, 2-4 wire conversion, loop closure detection and power down capability.","PeriodicalId":291836,"journal":{"name":"1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125557493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A 4-quadrant cosine-synthesis circuit 一个四象限余弦合成电路
1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1982.1156361
E. Seevinck, G. Renkema
{"title":"A 4-quadrant cosine-synthesis circuit","authors":"E. Seevinck, G. Renkema","doi":"10.1109/ISSCC.1982.1156361","DOIUrl":"https://doi.org/10.1109/ISSCC.1982.1156361","url":null,"abstract":"A circuit implementing an algebraic approximation to the cosine function, valid in all four quadrants with an error of 0.6% will be described. The approximation results in a smooth, differentiable function, without slope discontinuities.","PeriodicalId":291836,"journal":{"name":"1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124109710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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