Y. Ishihara, H. Masusaki, Shang–Qian Wu, K. Matsumoto, T. Kimijima
{"title":"Trace moisture measurement in HCl gas by near-infrared diode LASER spectroscopy","authors":"Y. Ishihara, H. Masusaki, Shang–Qian Wu, K. Matsumoto, T. Kimijima","doi":"10.1109/ISSM.1995.524395","DOIUrl":"https://doi.org/10.1109/ISSM.1995.524395","url":null,"abstract":"We have developed a laser absorption spectroscopy with a near-infrared distributed-feedback (DFB) laser diode as an in-situ and real time monitoring system in relation to future ultra-large scale integration (ULSI) technology. There we have found the existence of the H/sub 2/O-HCl cluster formed by hydrogen association in HCl gas. We have also demonstrated that the moisture in HCl gas can be precisely estimated by measurement of a vibrational spectrum of the isolated H/sub 2/O molecule itself while dissociating the cluster by probing laser energy.","PeriodicalId":289961,"journal":{"name":"Proceedings of International Symposium on Semiconductor Manufacturing","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124283894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Sugino, Y. Okui, M. Shigeno, S. Okubo, K. Takasaki, T. Ito
{"title":"Dry cleaning of Si and SiO/sub 2/ surfaces using SiCl/sub 4/ system","authors":"R. Sugino, Y. Okui, M. Shigeno, S. Okubo, K. Takasaki, T. Ito","doi":"10.1109/ISSM.1995.524404","DOIUrl":"https://doi.org/10.1109/ISSM.1995.524404","url":null,"abstract":"We have found an effective dry cleaning technique using SiCl/sub 4/ as a cleaning gas. Now, for the first time, surface Fe contaminants can be removed from an SiO/sub 2/ surface using SiCl/sub 4/. A Cl/sub 2/+SiCl/sub 4/ combination allows dry cleaning of a Si surface at a lower temperature than the conventional UV/Cl/sub 2/ method. Use of this Cl/sub 2/+SiCl/sub 4/ mixture gave good surface flatness and surface constitution for both Si and SiO/sub 2/ surfaces.","PeriodicalId":289961,"journal":{"name":"Proceedings of International Symposium on Semiconductor Manufacturing","volume":"200 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123021283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Requirements for contamination control in the G-bit era","authors":"H. Kitajima, Y. Shiramizu","doi":"10.1109/ISSM.1995.524359","DOIUrl":"https://doi.org/10.1109/ISSM.1995.524359","url":null,"abstract":"In future G-bit DRAM fabrication, the particle density on wafers will be seriously increased. This is because the deposition velocity of particles smaller than 0.1/spl mu/m drastically increases, and is further accelerated by the electrostatic potential of wafers. The lower limit of the conventional cleanroom cleanliness will be class 0.1-1 level, by dust generation from people. This fact leads us to the minienvironment fab system with automated I/O. In minienvironment systems, however, organic contamination will be a serious problem. Box material, plasticizer and anti-oxidizing agent must be reexamined from the viewpoint of organic contamination control.","PeriodicalId":289961,"journal":{"name":"Proceedings of International Symposium on Semiconductor Manufacturing","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123169544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Carrierless systems for wet cleaning","authors":"S. Kitahara, M. Sugita","doi":"10.1109/ISSM.1995.524377","DOIUrl":"https://doi.org/10.1109/ISSM.1995.524377","url":null,"abstract":"In the initial development of carrierless handling systems for multi-bath wet cleaning processes in semiconductor manufacturing, it was difficult to establish damageless wafer transport. However, the efforts have now been rewarded through the many process advantages observed for such systems as compared to both carrier and half-cassette type methods. In this article the histories and current status of each of these wafer handling technologies are discussed.","PeriodicalId":289961,"journal":{"name":"Proceedings of International Symposium on Semiconductor Manufacturing","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125291710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A review of sensing technologies for semiconductor process applications","authors":"A. Iturralde","doi":"10.1109/ISSM.1995.524373","DOIUrl":"https://doi.org/10.1109/ISSM.1995.524373","url":null,"abstract":"In this paper, a review of the current literature on semiconductor process sensor technology is presented. Much of the literature discusses in-situ measurements for film thickness, particles, and/or other conditions which could affect the quality of the product. Instruments such as RGAs (Residual Gas Analyzers), in-situ particle, and in-situ film thickness monitors represent current and future advanced sensors. Prior to implementing sensors, it would be ideal to reduce the number of process measurements as much as possible to ensure sensor effectiveness. It will be ideal to have a working cost of ownership model in place to baseline operations and monitor improvements as sensors move into the production line. There are many new sensors available with highly improved performance, accuracy, and even built-in electronics. These sensors can replace or supplement existing equipment sensors to improve performance, reliability, and extend equipment life. With the increasing costs of maintaining capital equipment, successful implementation could mean substantial savings. These and many other implementation issues are also presented. The paper concludes by discussing future opportunities for new sensor technologies and emerging support technologies such as MEMS (Microelectromechanical Systems).","PeriodicalId":289961,"journal":{"name":"Proceedings of International Symposium on Semiconductor Manufacturing","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128792703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A high level treatment of fluorine wastewater to reduce sludge","authors":"A. Toyoda, T. Taira","doi":"10.1109/ISSM.1995.524391","DOIUrl":"https://doi.org/10.1109/ISSM.1995.524391","url":null,"abstract":"A novel technique for treating fluorine wastewater has been developed in order to reduce sludge. This technique utilizes the dependence of solubility and adsorption characteristics of Al(OH)/sub 3/ gel on pH, and uses Al(OH)/sub 3/ gel itself repeatedly as a fluorine adsorbent. The reclamation process of Al(OH)/sub 3/ gel involves varying the pH level of its slurry to allow Al(OH)/sub 3/ gel to desorb fluorine and be dissolved as an aluminate ion. This technique can treat fluorine wastewater to several ppm at low-cost, and reduce the resulting volume of sludge to a level one-thirtieth the amount produced by the conventional treatment method.","PeriodicalId":289961,"journal":{"name":"Proceedings of International Symposium on Semiconductor Manufacturing","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121236231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Ohkura, K. Mizuno, J. Yugami, A. Hikichi, T. Nishida
{"title":"Semiconductor process line scheduling expert system","authors":"M. Ohkura, K. Mizuno, J. Yugami, A. Hikichi, T. Nishida","doi":"10.1109/ISSM.1995.524366","DOIUrl":"https://doi.org/10.1109/ISSM.1995.524366","url":null,"abstract":"We report a newly developed semiconductor process scheduler using an expert system, which assigns the lots to be processed to each machine at each period. This system is developed using an expert system development-supporting tool ES/PROMOTE2/W-PLAN. In contrast to line simulators such as ManSim, our system aims mainly at detailed and optimized scheduling for the next few days. Our system was successfully applied to our prototyping line and resulted in an average 10% increase in scheduled process steps compared with the existing scheduler which mainly considers the FIFO condition.","PeriodicalId":289961,"journal":{"name":"Proceedings of International Symposium on Semiconductor Manufacturing","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115807054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Solvent recycling for reuse in semiconductor manufacturing","authors":"P.E. Dahlgren","doi":"10.1109/ISSM.1995.524392","DOIUrl":"https://doi.org/10.1109/ISSM.1995.524392","url":null,"abstract":"Solvent recycling in semiconductor manufacturing presents unique problems, in part because of the high purity standards that must be met. Even trace impurities in the recycled solvent can adversely affect product quality. Where implemented properly, benefits can include a return on capital investment in less than 6 months and a 90% reduction in virgin chemical purchases and waste shipments. Presented are details and benefits of two on-site distillation systems which the IBM Microelectronics Division semiconductor manufacturing facility in Essex Junction, Vermont has successfully used to recycle spent n-butyl acetate and N-methyl-2-pyrollidone for reuse.","PeriodicalId":289961,"journal":{"name":"Proceedings of International Symposium on Semiconductor Manufacturing","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125642424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Single-wafer and mini-batch wet processing for improved process performance and process characterization","authors":"L. Wilson, D. Dornisch, E. Brown, E. Ward","doi":"10.1109/ISSM.1995.524393","DOIUrl":"https://doi.org/10.1109/ISSM.1995.524393","url":null,"abstract":"The goal of this study was to determine if single-wafer/minibatch wet processing could provide improved performance and characterization over standard batch processing, and, if so, to identify the process conditions which would contribute to the throughput and overall success of this approach.","PeriodicalId":289961,"journal":{"name":"Proceedings of International Symposium on Semiconductor Manufacturing","volume":"231 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133394982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Automatic defect classification system for patterned semiconductor wafers","authors":"L. Breaux, B. Singh","doi":"10.1109/ISSM.1995.524362","DOIUrl":"https://doi.org/10.1109/ISSM.1995.524362","url":null,"abstract":"The automatic detection of defects on patterned wafers is a well-developed technology. There are a number of commercially available defect detection systems which analyze the patterned wafers, determine the defect locations, and provide information on defect size. The next logical step would be to visually (optically or SEM) review the defects and determine the types which comprise the defect distributions obtained from the inspection tool, i.e. classify the defects according to some predetermined scheme. Of strong interest is then to use this information to isolate those problems which result in electrical failures and focus effort on solving those problems. Unfortunately, the process of classification is typically a manual process limited in its effectiveness by human factors. Replacing this manual bottleneck with an automated system is highly desirable. An automatic Defect Classification System (DCS-1) which combines image processing techniques and Fuzzy Logic Expert System (FLES) is now commercially available. The DCS-1 re-detects the defects in the field of view of a review station using image processing techniques and then classifies them using the FLES engine. In this paper we describe the DCS-1 which automates the defect classification process, offering a high degree of adaptivity, customization, and automation.","PeriodicalId":289961,"journal":{"name":"Proceedings of International Symposium on Semiconductor Manufacturing","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129503372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}