Proceedings of International Symposium on Semiconductor Manufacturing最新文献

The state of the Japanese semiconductor industry in the next century 下个世纪日本半导体产业的现状

Proceedings of International Symposium on Semiconductor Manufacturing Pub Date : 1995-09-17 DOI: 10.1109/ISSM.1995.524411

T. Kawanishi

引用次数: 0

CMP slurry particle size spectrometer CMP浆料粒度谱仪

Proceedings of International Symposium on Semiconductor Manufacturing Pub Date : 1995-09-17 DOI: 10.1109/ISSM.1995.524358

J. A. Adams, D. Dornisch, G.A. Krulik, D.W. Persichini

{"title":"CMP slurry particle size spectrometer","authors":"J. A. Adams, D. Dornisch, G.A. Krulik, D.W. Persichini","doi":"10.1109/ISSM.1995.524358","DOIUrl":"https://doi.org/10.1109/ISSM.1995.524358","url":null,"abstract":"The particle size distribution in Chemical Mechanical Planarization (CMP) slurries is critical to the proper performance of the CMP Planarization process. Instrumentation in the past has been developed to measure the average particle size. However, just knowing the average particle size of the slurry will not prevent damaging scratches from occurring on high value planarized wafers. Fundamental physical properties and behaviours of slurries are strongly affected by both particle size and particle size distribution. This paper describes the application of a new instrument designed specifically for the measurement of particle size distribution in CMP slurries, with polishing particles that can range in size from 30 nanometers to 1100 nanometers. This new instrument, called the SPS-100, can resolve sub-populations with size differences as little as 10% in diameter. Slurries that have suffered change in critical polish particle size due to motion or temperature caused agglomeration in transit can be quickly identified. Slurries that tend to settle during shipment can be quickly certified for use through the use of this new instrument, after the slurry is remixed. This paper presents data from the slurry particle size spectrometer for various slurries used in CMP.","PeriodicalId":289961,"journal":{"name":"Proceedings of International Symposium on Semiconductor Manufacturing","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123109531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Possibilities and limitation of SiO/sub 2/ etching with parallel plate RF plasma 平行板射频等离子体SiO/ sub2 /蚀刻的可能性和局限性

Proceedings of International Symposium on Semiconductor Manufacturing Pub Date : 1995-09-17 DOI: 10.1109/ISSM.1995.524385

S. Sekiyama, Y. Motoyama, K. Iwasaki

引用次数: 2

ULSI inspection system using digital scanning confocal microscopy with applications to PZT film ULSI检测系统采用数字扫描共聚焦显微镜，应用于PZT薄膜

Proceedings of International Symposium on Semiconductor Manufacturing Pub Date : 1995-09-17 DOI: 10.1109/ISSM.1995.524371

Y. Ichikawa, J. Toriwaki

引用次数: 0

Monitoring multi-stage sequential manufacturing processes: a Bayesian approach 监控多阶段连续制造过程:贝叶斯方法

Proceedings of International Symposium on Semiconductor Manufacturing Pub Date : 1995-09-17 DOI: 10.1109/ISSM.1995.524386

S. Rao, Andrzej J. Strojwas, J. Lehoczky, M. Schervish

引用次数: 4

Virtual manufacturing system 虚拟制造系统

Proceedings of International Symposium on Semiconductor Manufacturing Pub Date : 1995-09-17 DOI: 10.1109/ISSM.1995.524346

H. Koriyama, Y. Yazaki, I. Honbori, Y. Kato, T. Kisakibaru

引用次数: 9

A unique approach to yield enhancement/defect characterization using electrical comb monitors 一种独特的方法来提高良率/缺陷表征使用电梳式监测器

Proceedings of International Symposium on Semiconductor Manufacturing Pub Date : 1995-09-17 DOI: 10.1109/ISSM.1995.524381

W.R. Morrison, J. Campbell, J. Shaw

{"title":"A unique approach to yield enhancement/defect characterization using electrical comb monitors","authors":"W.R. Morrison, J. Campbell, J. Shaw","doi":"10.1109/ISSM.1995.524381","DOIUrl":"https://doi.org/10.1109/ISSM.1995.524381","url":null,"abstract":"Comb/serpent defect monitors are typically used to characterize and understand process yields on production by mimicking actual production flow. In contrast, a unique application of comb/serpent defect monitors is discussed. By processing the monitors in a non-standard process flow compared to production wafers, sources of defects can be definitively isolated and then eliminated. Comb/serpent defect monitors are an important supplement to any yield improvement plan because: (1) They definitely pinpoint the source process which is affecting yield. (2) They determine the kill ratio of each defect type. As design rules shrink and semiconductor devices add multiple layers of metal the detectability of killing defects using inline inspections diminishes, thus does the need increase for type of defect partitioning described herein. Advantages and disadvantages as well as specific examples of the benefits of comb/serpent monitors in a 0.6 /spl mu/m CMOS process manufacturing environment are discussed. Also discussed is the use of this non-standard process flow material to monitor key yield impact in an integrated process instead of using a PWP monitor.","PeriodicalId":289961,"journal":{"name":"Proceedings of International Symposium on Semiconductor Manufacturing","volume":"52 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129400495","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analysis of RF plasma using electrical equivalent circuit 射频等离子体等效电路分析

Proceedings of International Symposium on Semiconductor Manufacturing Pub Date : 1995-09-17 DOI: 10.1109/ISSM.1995.524408

M. Hirayama, K. Ino, T. Ohmi

引用次数: 1

Particle count and analysis by using a cyclone particle sampler 使用旋风颗粒取样器进行颗粒计数和分析

Proceedings of International Symposium on Semiconductor Manufacturing Pub Date : 1995-09-17 DOI: 10.1109/ISSM.1995.524384

N. Tokunaga, S. Okamura, S. Sasaki, S. Nakamura, F. Mieno

引用次数: 2

Ultra flexible R&D line management for Si wafer processes 超灵活的硅晶圆工艺研发线管理

Proceedings of International Symposium on Semiconductor Manufacturing Pub Date : 1995-09-17 DOI: 10.1109/ISSM.1995.524348

M. Kitamura, Y. Sakakibara

引用次数: 0