Proceedings of International Symposium on Semiconductor Manufacturing最新文献_第2页

Yield enhancement vs. performance improvement in VLSI circuits VLSI电路的良率提升与性能改善

Proceedings of International Symposium on Semiconductor Manufacturing Pub Date : 1995-09-17 DOI: 10.1109/ISSM.1995.524352

V. Chiluvuri, I. Koren

引用次数: 6

Manufacturability evaluation of deep submicron exposure tools using statistical metrology 用统计计量法评价深亚微米曝光工具的可制造性

Proceedings of International Symposium on Semiconductor Manufacturing Pub Date : 1995-09-17 DOI: 10.1109/ISSM.1995.524396

C. Yu, Hua‐yu Liu, C. Spanos

{"title":"Manufacturability evaluation of deep submicron exposure tools using statistical metrology","authors":"C. Yu, Hua‐yu Liu, C. Spanos","doi":"10.1109/ISSM.1995.524396","DOIUrl":"https://doi.org/10.1109/ISSM.1995.524396","url":null,"abstract":"Statistical Metrology has been proposed as a technique to extract variability components of an IC process sequence through the combined use of conventional metrology and statistical filtering. We have developed a methodology to decompose and categorize CD variability into individual equipment contributions, specifically the steppers and reticles used in 0.35 /spl mu/m polysilicon gate patterning. Spatial variability was sampled using a reticle designed to collect CD measurements over the exposure field and the wafer. Then, a series of statistical and physical filters were implemented to separate the reticle and stepper contributions to CD variability. Results have shown that CD variability has strong spatial and causal components. Decomposition results are applied towards: (1) Identifying bottlenecks in manufacturability by providing an accurate error budget analysis. (2) Using isolated equipment variability components as a manufacturability metric to benchmark exposure tools. (3) Quantifying the correlation between spatial variability components can be manipulated to improve net process manufacturability.","PeriodicalId":289961,"journal":{"name":"Proceedings of International Symposium on Semiconductor Manufacturing","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133938067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Productivity improvement driven by an integrated manufacturing system 由集成制造系统驱动的生产率提高

Proceedings of International Symposium on Semiconductor Manufacturing Pub Date : 1995-09-17 DOI: 10.1109/ISSM.1995.524347

J. Bonal, A. Sanchez, S. Aparicio, M. Fernandez, J. González, L. Rios, M. Rosendo, S. Malvar

{"title":"Productivity improvement driven by an integrated manufacturing system","authors":"J. Bonal, A. Sanchez, S. Aparicio, M. Fernandez, J. González, L. Rios, M. Rosendo, S. Malvar","doi":"10.1109/ISSM.1995.524347","DOIUrl":"https://doi.org/10.1109/ISSM.1995.524347","url":null,"abstract":"An integrated manufacturing system is under development in the AT&T Madrid plant. It has three basic modules: planning, execution, and measurement/analysis and corrective actions. The planning module uses engineering standards to calculate the resources needed for any business requirement. At the same time it calculates the utilization required and the cycle time goals for all the work centers, allowing an optimization of the trade-off utilization (cost)/cycle time. The same engineering standards and planning factors (number of machines, etc.) feed the execution module. The core of this module is a scheduler which manages the product flow, assigning the work per shift and facility type. The production rates are calculated taking into consideration commitments to the customers, current machine status, inventory availability, engineering standards and the inventory managing rules obtained by the experience or simulation. The third module compares current cycle times per work center with the values assigned by the cycle time model. The major discrepancies are traced back to engineering standards not achieved. When a capacity increase is planned, future problems can be forecasted by the comparison between the percent utilization of available time obtained in the capacity model with the standards and with the current values of the same parameters. All the major issues trigger corrective action plans. These are tracked until they disappear. The first 21 weeks of use of the Integrated Manufacturing system has driven a cycle time improvement of 20% (see chart II) and, at the same time, the wafers started were increased by 18%.","PeriodicalId":289961,"journal":{"name":"Proceedings of International Symposium on Semiconductor Manufacturing","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134252987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Global planning at Harris Semiconductor 哈里斯半导体的全球规划

Proceedings of International Symposium on Semiconductor Manufacturing Pub Date : 1995-09-17 DOI: 10.1109/ISSM.1995.524350

S. V. Murty, J. Bienvenu

引用次数: 8

Next generation processes and equipment that lead to positive environment, safety and health impacts 对环境、安全和健康产生积极影响的新一代工艺和设备

Proceedings of International Symposium on Semiconductor Manufacturing Pub Date : 1995-09-17 DOI: 10.1109/ISSM.1995.524388

P. Pei, H. R. Kerby

引用次数: 0

In-situ plasma cleaning by rotating transverse magnetic field 旋转横向磁场原位等离子体清洗

Proceedings of International Symposium on Semiconductor Manufacturing Pub Date : 1995-09-17 DOI: 10.1109/ISSM.1995.524353

T. Kawasima, S. Bannai, T. Chiba, I. Honbori, T. Kisakibaru

引用次数: 0

A methodology for the top-down synthesis of semiconductor process flows 一种自上而下合成半导体工艺流程的方法

Proceedings of International Symposium on Semiconductor Manufacturing Pub Date : 1995-09-17 DOI: 10.1109/ISSM.1995.524354

S. Saxena, P. K. Mozumder, A. Unruh, R. Burch

引用次数: 7

An investigation of thermally-sprayed aluminum oxide coatings for high-temperature electrostatic chucks (ESCs) 高温静电卡盘用热喷涂氧化铝涂层的研究

Proceedings of International Symposium on Semiconductor Manufacturing Pub Date : 1995-09-17 DOI: 10.1109/ISSM.1995.524397

C. J. Swindeman, R. D. Seals, W. Murray, M. H. Cooper, K. Forbes

{"title":"An investigation of thermally-sprayed aluminum oxide coatings for high-temperature electrostatic chucks (ESCs)","authors":"C. J. Swindeman, R. D. Seals, W. Murray, M. H. Cooper, K. Forbes","doi":"10.1109/ISSM.1995.524397","DOIUrl":"https://doi.org/10.1109/ISSM.1995.524397","url":null,"abstract":"Thermally-sprayed aluminum oxide (Al/sub 2/O/sub 3/) coatings were investigated as candidate materials for high temperature electrostatic chucks (ESCs). Electrical resistivities and dielectric constants of Al/sub 2/O/sub 3/ coatings deposited on test coupons were measured at temperatures up to 500/spl deg/C. Limited breakdown voltage testing was also performed. To examine the effect of impurities on electrical resistivity over the test temperature range, data for plasma-sprayed alumina coatings of various purity levels were compared. Resistivity data for plasma- and high velocity oxy-fuel (HVOF)-sprayed coatings were compared to data reported for sintered alumina of various purity levels, with the coatings generally exhibiting higher resistivities than bulk alumina for similar purity levels. The effect of plasma-spray power level and feed angle on electrical resistivity of coatings deposited using two types of high purity alumina was also examined. Results of these tests were used to select a coating and spray process to fabricate a pair of small-scale ESCs. When evaluated in a test chamber, these ESCs showed promising behavior by maintaining adequate wafer holding pressures after testing up to 24 hours at a maximum test temperature of 400/spl deg/C. Results of test coupon and small-scale ESC testing suggest that it may be possible to produce an effective alumina coating for high temperature ESCs through proper control of coating impurities and thermal spray process characteristics, although further work is needed to more fully characterize coatings and optimize process conditions.","PeriodicalId":289961,"journal":{"name":"Proceedings of International Symposium on Semiconductor Manufacturing","volume":"116 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122961973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Recognition and rewards: human elements of semiconductor manufacturing excellence 认可和奖励:半导体制造卓越的人为因素

Proceedings of International Symposium on Semiconductor Manufacturing Pub Date : 1995-09-17 DOI: 10.1109/ISSM.1995.524379

P. Mack, M. Simmons, S. Thornton

引用次数: 0

Progressive automation system for semiconductor manufacturing 半导体制造渐进式自动化系统

Proceedings of International Symposium on Semiconductor Manufacturing Pub Date : 1995-09-17 DOI: 10.1109/ISSM.1995.524374

Y. Iwata, S. Shimoyashiro, T. Masui

引用次数: 0