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2013 IEEE International Integrated Reliability Workshop Final Report最新文献

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Defect-based compact model for circuit reliability simulation in advanced CMOS technologies 先进CMOS技术中基于缺陷的电路可靠性仿真紧凑模型
2013 IEEE International Integrated Reliability Workshop Final Report Pub Date : 1900-01-01 DOI: 10.1109/IIRW.2013.6804155
I. Esqueda, H. Barnaby
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引用次数: 9
Relevance of non-exponential single-defect-induced threshold voltage shifts for NBTI variability 非指数单缺陷引起的阈值电压偏移与NBTI可变性的相关性
2013 IEEE International Integrated Reliability Workshop Final Report Pub Date : 1900-01-01 DOI: 10.1109/IIRW.2013.6804161
J. Franco, B. Kaczer, P. Roussel, M. Toledano-Luque, P. Weckx, T. Grasser
{"title":"Relevance of non-exponential single-defect-induced threshold voltage shifts for NBTI variability","authors":"J. Franco, B. Kaczer, P. Roussel, M. Toledano-Luque, P. Weckx, T. Grasser","doi":"10.1109/IIRW.2013.6804161","DOIUrl":"https://doi.org/10.1109/IIRW.2013.6804161","url":null,"abstract":"We report statistical NBTI datasets of nanoscale Si/SiON pMOSFETs. Weibull-distributed single-defect-induced ΔV<sub>th</sub> are observed in the NBTI relaxation transients, in contrast with literature reports of exponential distribution. We discuss the (ir)relevance of a correct description of the single-defect-induced ΔV<sub>th</sub> steps for describing the total BTI induced ΔV<sub>th</sub> distribution. We show that the BTI induced V<sub>th</sub> variance can be correctly predicted based on time-zero V<sub>th0</sub>-variability only.","PeriodicalId":287904,"journal":{"name":"2013 IEEE International Integrated Reliability Workshop Final Report","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123357401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
(Invited) Modeling reliability in GaN HEMTs (特邀)GaN hemt的建模可靠性
2013 IEEE International Integrated Reliability Workshop Final Report Pub Date : 1900-01-01 DOI: 10.1109/IIRW.2013.6804150
D. Vasileska
{"title":"(Invited) Modeling reliability in GaN HEMTs","authors":"D. Vasileska","doi":"10.1109/IIRW.2013.6804150","DOIUrl":"https://doi.org/10.1109/IIRW.2013.6804150","url":null,"abstract":"In this paper we present modeling reliability concerns in GaN HEMT technology. A theoretical model was developed to model the piezoelectric polarization charge dependence on the applied gate voltage. To model self-heating effects, an elec-tro-thermal device simulator was developed that couples the Monte Carlo-Poisson solver with the energy balance solver for the acoustic and optical phonons. Current collapse was explained as charging the surface states due the Paul-Frenkel tunneling from the gate into the gate to drain extension. Excellent agreement is obtained between the theoretical calculations and the experimental data of the unstressed and the stressed devices with this model.","PeriodicalId":287904,"journal":{"name":"2013 IEEE International Integrated Reliability Workshop Final Report","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121738011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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