J. Franco, B. Kaczer, P. Roussel, M. Toledano-Luque, P. Weckx, T. Grasser
{"title":"非指数单缺陷引起的阈值电压偏移与NBTI可变性的相关性","authors":"J. Franco, B. Kaczer, P. Roussel, M. Toledano-Luque, P. Weckx, T. Grasser","doi":"10.1109/IIRW.2013.6804161","DOIUrl":null,"url":null,"abstract":"We report statistical NBTI datasets of nanoscale Si/SiON pMOSFETs. Weibull-distributed single-defect-induced ΔV<sub>th</sub> are observed in the NBTI relaxation transients, in contrast with literature reports of exponential distribution. We discuss the (ir)relevance of a correct description of the single-defect-induced ΔV<sub>th</sub> steps for describing the total BTI induced ΔV<sub>th</sub> distribution. We show that the BTI induced V<sub>th</sub> variance can be correctly predicted based on time-zero V<sub>th0</sub>-variability only.","PeriodicalId":287904,"journal":{"name":"2013 IEEE International Integrated Reliability Workshop Final Report","volume":"103 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Relevance of non-exponential single-defect-induced threshold voltage shifts for NBTI variability\",\"authors\":\"J. Franco, B. Kaczer, P. Roussel, M. Toledano-Luque, P. Weckx, T. Grasser\",\"doi\":\"10.1109/IIRW.2013.6804161\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report statistical NBTI datasets of nanoscale Si/SiON pMOSFETs. Weibull-distributed single-defect-induced ΔV<sub>th</sub> are observed in the NBTI relaxation transients, in contrast with literature reports of exponential distribution. We discuss the (ir)relevance of a correct description of the single-defect-induced ΔV<sub>th</sub> steps for describing the total BTI induced ΔV<sub>th</sub> distribution. We show that the BTI induced V<sub>th</sub> variance can be correctly predicted based on time-zero V<sub>th0</sub>-variability only.\",\"PeriodicalId\":287904,\"journal\":{\"name\":\"2013 IEEE International Integrated Reliability Workshop Final Report\",\"volume\":\"103 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Integrated Reliability Workshop Final Report\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIRW.2013.6804161\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Integrated Reliability Workshop Final Report","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2013.6804161","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Relevance of non-exponential single-defect-induced threshold voltage shifts for NBTI variability
We report statistical NBTI datasets of nanoscale Si/SiON pMOSFETs. Weibull-distributed single-defect-induced ΔVth are observed in the NBTI relaxation transients, in contrast with literature reports of exponential distribution. We discuss the (ir)relevance of a correct description of the single-defect-induced ΔVth steps for describing the total BTI induced ΔVth distribution. We show that the BTI induced Vth variance can be correctly predicted based on time-zero Vth0-variability only.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
