Journal of Vacuum Science & Technology B最新文献_第4页

Effects of ion implantation with arsenic and boron in germanium-tin layers 锗锡层中砷和硼离子注入的影响

Journal of Vacuum Science & Technology B Pub Date : 2024-04-09 DOI: 10.1116/6.0003565

Sylvester Amoah, H. Stanchu, G. Abernathy, Serhii Kryvyi, F. D. de Oliveira, Yuriy I. Mazur, Shangda Li, Shang Liu, Jifeng Liu, Wei Du, Baohua Li, Gregory J. Salamo, Shui-Qing Yu

{"title":"Effects of ion implantation with arsenic and boron in germanium-tin layers","authors":"Sylvester Amoah, H. Stanchu, G. Abernathy, Serhii Kryvyi, F. D. de Oliveira, Yuriy I. Mazur, Shangda Li, Shang Liu, Jifeng Liu, Wei Du, Baohua Li, Gregory J. Salamo, Shui-Qing Yu","doi":"10.1116/6.0003565","DOIUrl":"https://doi.org/10.1116/6.0003565","url":null,"abstract":"Ion implantation is widely used in the complementary metal–oxide–semiconductor process, which stimulates to study its role for doping control in rapidly emerging group IV Ge1−xSnx materials. We tested the impact of As and B implantation and of subsequent rapid thermal annealing (RTA) on the damage formation and healing of the Ge1−xSnx lattice. Ion implantation was done at 30, 40, and 150 keV and with various doses. The implantation profiles were confirmed using secondary ion mass spectrometry. X-ray diffraction in combination with Raman and photoluminescence spectroscopies indicated notable crystal damage with the increase of the implantation dose and energy. Significant damage recovery was confirmed after RTA treatment at 300 °C and to a larger extent at 400 °C for a Ge1−xSnx sample with Sn content less than 11%. A GeSn NP diode was fabricated after ion implantation. The device showed rectifying current-voltage characteristics with maximum responsivity and detectivity of 1.29 × 10−3 A/W and 3.0 × 106 cm (Hz)1/2/W at 77 K, respectively.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"14 8","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140727029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Multi-step plasma etching of high aspect ratio silicon nanostructures for metalens fabrication 多步等离子体蚀刻高纵横比硅纳米结构以制造金属膜

Journal of Vacuum Science & Technology B Pub Date : 2024-04-08 DOI: 10.1116/6.0003429

Xiaoli Zhu, Zihao Wang, Chenxu Zhu, Jiashi Shen, Babak Shokouhi, H. Ekinci, Bo Cui

{"title":"Multi-step plasma etching of high aspect ratio silicon nanostructures for metalens fabrication","authors":"Xiaoli Zhu, Zihao Wang, Chenxu Zhu, Jiashi Shen, Babak Shokouhi, H. Ekinci, Bo Cui","doi":"10.1116/6.0003429","DOIUrl":"https://doi.org/10.1116/6.0003429","url":null,"abstract":"Inductively coupled plasma etching of silicon nanostructures for metalens applications using a continuous, multi-step C4F8/SF6 plasma was investigated to achieve high aspect ratio (HAR) features down to tens of nanometers with smooth sidewalls. In the process, the ion bombardment and the free radical transport significantly change among HAR nanostructures as the etching progresses, posing challenges to profile control. With a fixed gas ratio, a change in the profile angle occurs at a depth of approximately 400 nm, transitioning from a positive taper to a negative one. Additionally, a wave-like pillar profile is produced when using three separate (i.e., plasma turned off after each step) etching processes with varying gas ratios. To optimize passivation and etching, we adopt a three-step C4F8/SF6 plasma etching process with varying gas ratios at different etching depths. By keeping the plasma on after each step, the continuous, three-step process provides more flexibility for tuning the etching of HAR nanostructures with smooth and vertical profiles. Metalens nanostructures with 71 nm diameter and 1 μm height were created using the appropriate gas ratio. The feature size variation is less than 10 nm. This proposed continuous, multi-step process improves the controllability of silicon etching in C4F8/SF6 plasma, facilitating the nanofabrication of silicon metalens and other nanodevices.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"34 15","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140728064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of beam and gate offset size on x-ray focal spot resolution of a cold cathode electron beam 光束和栅极偏移尺寸对冷阴极电子束 X 射线焦斑分辨率的影响

Journal of Vacuum Science & Technology B Pub Date : 2024-04-02 DOI: 10.1116/6.0003390

Jaydip Sawant, Ketan Bhotkar, Y. Yu, Kyu Chang Park

引用次数: 0

Analysis of temperature-dependent current–voltage characteristics of Schottky diodes by the modified thermionic emission current model 用修正的热释电流模型分析肖特基二极管随温度变化的电流-电压特性

Journal of Vacuum Science & Technology B Pub Date : 2024-03-28 DOI: 10.1116/6.0003463

A. Turut

{"title":"Analysis of temperature-dependent current–voltage characteristics of Schottky diodes by the modified thermionic emission current model","authors":"A. Turut","doi":"10.1116/6.0003463","DOIUrl":"https://doi.org/10.1116/6.0003463","url":null,"abstract":"We have investigated the behavior of current flow across an inhomogeneous Schottky diode (SD) as a function of temperature by numerical simulation. We have used the modified thermionic emission (TE) current expression with a Gaussian distribution of potential barrier heights. This modified TE model assumes the presence of a series of low-barrier patches at the Schottky contact and semiconductor interface. First, we have discussed the behavior of the patch current compound relative to the TE compound in the inhomogeneous SD at 300, 200, and 100 K, as a function of standard deviation and the number of circular patches N. Then, we have investigated the behavior of temperature- and bias-dependent and bias-independent current vs voltage (I–V–T) characteristics in the 75–300 K range. In bias-dependent I–V–T curves obtained for σ1=4.35×10−5cm2/3V1/3 and σ2=7.35×10−5cm2/3V1/3 at N1=1.81×106 or N2=1.81×108, an intersection behavior has been observed in the I–V curve at 75 K for σ2 at both N values; however, the same behavior has been not observed for σ1 at both N values due to σ1<σ2. That is, the current for σ2 at 75 K has exceeded the current at higher temperatures. This behavior has been ascribed to the effective BH to decrease with decreasing temperature value. In the I–V–T curves independent of bias, such an intersection has not been observed for σ1 while it has been observed for σ2 in the I–V curves at both 75 and 100 K. Thus, it has been concluded that the bias-dependeσnt I–V equations must be used to avoid this intersection behavior while fitting the experimental I–V curve of an SD to the theoretical I–V curve.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"141 14","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140369077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

CuO-ZnO nanocomposite for photocatalytic application 用于光催化应用的 CuO-ZnO 纳米复合材料

Journal of Vacuum Science & Technology B Pub Date : 2024-03-27 DOI: 10.1116/6.0003482

Joanna Rymarczyk, I. Stępińska

{"title":"CuO-ZnO nanocomposite for photocatalytic application","authors":"Joanna Rymarczyk, I. Stępińska","doi":"10.1116/6.0003482","DOIUrl":"https://doi.org/10.1116/6.0003482","url":null,"abstract":"The rising levels of water pollution and climate change contribute to water shortages. These factors influence the loss of the environment’s biodiversity and threaten human health. Toxic dye pigments from industries are a significant source of pollution. In this article, we present the synthesis method, characteristics, and photocatalytic properties of the CuO-ZnO nanocomposite, which may affect the degree of decomposition of dyes found in water. The nanocomposite consisting of copper oxide nanowires with zinc oxide nanostructures (CuO-ZnO nanocomposite) was prepared by physical vapor deposition and thermal oxidation methods. The crystalline structure, surface topographies and morphologies, elemental composition, and optical properties of the obtained samples were studied with various techniques such as x-ray diffraction analysis, high-resolution transmission electron microscopy, field emission scanning electron microscopy, energy dispersive x-ray analysis, and UV-vis spectroscopy. The photocatalytic activity of the nanocomposite was measured by testing the degradation of methylene blue under visible irradiation. An increase in the photocatalytic activity of the nanocomposite was observed compared to pure CuO and ZnO. The CuO-ZnO nanocomposite demonstrated a high dye degradation of about 94% during 120 min.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"41 5","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140376783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Temperature-dependent morphology and composition of ultra-thin GeSn epilayers prepared by remote plasma enhanced chemical vapor deposition 远程等离子体增强化学气相沉积法制备的超薄 GeSn 外延层的形貌和组成与温度有关

Journal of Vacuum Science & Technology B Pub Date : 2024-03-27 DOI: 10.1116/6.0003445

Jiechao Jiang, Nonso Chetuya, E. Meletis, Joseph H. Ngai, Gordon J. Grzybowski, Bruce Claflin

{"title":"Temperature-dependent morphology and composition of ultra-thin GeSn epilayers prepared by remote plasma enhanced chemical vapor deposition","authors":"Jiechao Jiang, Nonso Chetuya, E. Meletis, Joseph H. Ngai, Gordon J. Grzybowski, Bruce Claflin","doi":"10.1116/6.0003445","DOIUrl":"https://doi.org/10.1116/6.0003445","url":null,"abstract":"Two distinct ultra-thin Ge1−xSnx (x ≤ 0.1) epilayers were deposited on (001) Si substrates at 457 and 313 °C through remote plasma-enhanced chemical vapor deposition. These films are considered potential initiation layers for synthesizing thick epitaxial GeSn films. The GeSn film deposited at 313 °C has a thickness of 10 nm and exhibits a highly epitaxial continuous structure with its lattice being compressed along the interface plane to coherently match Si without mismatch dislocations. The GeSn film deposited at 457 °C exhibits a discrete epitaxial island-like morphology with a peak height of ∼30 nm and full-width half maximum (FWHM) varying from 20 to 100 nm. GeSn islands with an FWHM smaller than 20 nm are defect free, whereas those exceeding 25 nm encompass nanotwins and/or stacking faults. The GeSn islands form two-dimensional modulated superlattice structures at the interface with Si. The GeSn film deposited at 457 °C possesses a lower Sn content compared to the one deposited at lower temperature. The potential impact of using these two distinct ultra-thin layers as initiation layers for the direct growth of thicker GeSn epitaxial films on (001) Si substrates is discussed.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"46 14","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140373482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Modeling and control of L-type network impedance matching for semiconductor plasma etch 用于半导体等离子体蚀刻的 L 型网络阻抗匹配建模与控制

Journal of Vacuum Science & Technology B Pub Date : 2024-03-01 DOI: 10.1116/6.0003444

Carlos Rodriguez, Jairo Viola, Yangquan Chen, Joaquín Álvarez

{"title":"Modeling and control of L-type network impedance matching for semiconductor plasma etch","authors":"Carlos Rodriguez, Jairo Viola, Yangquan Chen, Joaquín Álvarez","doi":"10.1116/6.0003444","DOIUrl":"https://doi.org/10.1116/6.0003444","url":null,"abstract":"The plasma process plays a pivotal role in the semiconductor industry, facilitating the creation of transistors and memory storage cells. This fourth state of matter is achieved by energizing a gas with radio-frequency electrical power, initiating and maintaining a stable plasma during the process cycles. Given that plasma behaves as an impedance component, an impedance-matching network becomes essential for optimizing power transfer from the source to the load (plasma). While various control strategies have been proposed for different network configurations, such as L, T, and Π networks, our work focuses on the L-type network due to its simplicity and extensive application in this domain. Several significant challenges have been identified in the existing literature, including slow dynamics, a non-monotonic decline in the reflected power, and substantial deviation in the capacitors’ path. These issues collectively impact the overall performance of the matching control system. In this article, we present a new methodology to obtain a nonlinear state-space model of the matching network for its analysis and design a proportional-integral combined with feedforward control and a control Lyapunov-barrier function to assess their effectiveness in achieving convergence to the desired matching value and guiding the path of the capacitors. These approaches aim to mitigate the recurring issues caused by capacitors moving in the wrong direction, thus improving the stability and efficiency of the impedance-matching process over time.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"59 5","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140271646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Field emission characterization of field-aligned carbon nanotubes synthesized in an environmental transmission electron microscope 在环境透射电子显微镜中合成的场配位碳纳米管的场发射特性分析

Journal of Vacuum Science & Technology B Pub Date : 2024-03-01 DOI: 10.1116/6.0003413

P. Vincent, Federico Panciera, I. Florea, A. Ayari, S. Perisanu, C. S. Cojocaru, Haifa Taoum, Chen Wei, K. Saidov, U. Mirsaidov, Ilias Aguili, Nicholas Blanchard, P. Legagneux, S. Purcell

{"title":"Field emission characterization of field-aligned carbon nanotubes synthesized in an environmental transmission electron microscope","authors":"P. Vincent, Federico Panciera, I. Florea, A. Ayari, S. Perisanu, C. S. Cojocaru, Haifa Taoum, Chen Wei, K. Saidov, U. Mirsaidov, Ilias Aguili, Nicholas Blanchard, P. Legagneux, S. Purcell","doi":"10.1116/6.0003413","DOIUrl":"https://doi.org/10.1116/6.0003413","url":null,"abstract":"Optimizing the synthesis of carbon nanotubes (CNTs) for applications like field emission (FE) sources requires a fundamental understanding of the growth kinetics of individual CNTs. In this article, we explore how applying electric fields during CNT synthesis influences the as-grown nanotubes and their FE performance. We observe growth and undertake FE measurements in real time using an environmental transmission electron microscope. This is achieved through a polarizable capacitor gap within a microchip sample heater specifically designed for this purpose. Individual nanotubes are easily resolved and are predominantly single-wall CNTs. At low-applied fields, the growing nanotubes can span the gap and link with the opposite electrode, albeit with some loss due to mechanical failure. With a high-applied field and positive bias for FE, we continue to observe the oriented growth of nanotubes. However, this growth is constrained within the gap due to the possibility of FE occurring during the growth process, which can result in either saturation or damage. At any given time, we have the flexibility to halt the growth process and conduct in situ FE experiments. This approach enables us to comprehensively track the complete development of the CNTs and gain insights into the various mechanisms responsible for limiting the performance of CNT cathodes. Interestingly, we report an original self-oscillation induced destruction mechanism that has not been reported before.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"76 ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140273952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Sodium adsorption on nanometer-thick TiO2 channel thin-film transistors for enhanced drain currents 在纳米厚的 TiO2 沟道薄膜晶体管上吸附钠以增强漏极电流

Journal of Vacuum Science & Technology B Pub Date : 2024-03-01 DOI: 10.1116/6.0003217

Ryo Miyazawa, Haruto Suzuki, Hibiki Takeda, M. Miura, B. Ahmmad, Fumihiko Hirose

{"title":"Sodium adsorption on nanometer-thick TiO2 channel thin-film transistors for enhanced drain currents","authors":"Ryo Miyazawa, Haruto Suzuki, Hibiki Takeda, M. Miura, B. Ahmmad, Fumihiko Hirose","doi":"10.1116/6.0003217","DOIUrl":"https://doi.org/10.1116/6.0003217","url":null,"abstract":"Sodium adsorption on nanometer-thick-TiO2-channel thin-film transistors (TFTs) are examined for enhancing the drain current. In the TFTs, the channel thickness of TiO2 is set as thin as ∼16 nm. The TiO2 film is deposited by atomic layer deposition using plasma excited humified Ar, followed by crystallization into the anatase phase by thermal annealing at 500 °C in air. The gate oxide is a 300 nm thick SiO2 film, which is grown on a highly doped n+ Si substrate. The n+ Si substrate is used as the gate electrode. The drain and source electrodes of Ti are deposited by an electron beam evaporation at room temperature. The TiO2 channel is covered with multiple layers of aluminum silicate and SiO2 films to enhance the Na sorptivity. The multiple films consist of combinations of 1 nm thick SiO2 and 0.16 nm thick aluminum silicate. The channel length and width are 60 and 1000 μm, respectively. The TFT without the Na adsorption exhibits a field effect mobility of ∼0.5 cm2/V s, where the drain current is recorded around 30 μA with a gate voltage of 10 V. With immersion of the TFT in a 10 mM NaCl solution, the drain current is enhanced to the order of mA. The simulation with an equivalent circuit with source and drain resistances suggests that the field effect mobility is enhanced to ∼30 cm2/V s with the adsorption of Na. In this paper, we discuss the operation mechanism of the Na adsorbed TiO2 TFT and its applicability as TFT-based high current switch devices and sensors.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"29 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140269705","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Plasma-assisted synthesis of gold-silver core-shell nanoparticles and their enhanced catalytic dye degradation and surface enhanced Raman spectroscopy performance 等离子体辅助合成金银核壳纳米粒子及其增强的染料降解催化性能和表面增强拉曼光谱性能

Journal of Vacuum Science & Technology B Pub Date : 2024-03-01 DOI: 10.1116/6.0003245

Siddiqa Ismail, W. Ahmed, Muhammad Farooq, N. U. Rehman

{"title":"Plasma-assisted synthesis of gold-silver core-shell nanoparticles and their enhanced catalytic dye degradation and surface enhanced Raman spectroscopy performance","authors":"Siddiqa Ismail, W. Ahmed, Muhammad Farooq, N. U. Rehman","doi":"10.1116/6.0003245","DOIUrl":"https://doi.org/10.1116/6.0003245","url":null,"abstract":"The plasma-liquid interaction (PLI) technique has been employed as a green approach for the synthesis of gold-silver core-shell nanoparticles (Au@AgNPs) using a two-step method. In the first step, the Au seed particles were grown by the PLI technique. Subsequently, the formation of Ag shell was achieved by adding AgNO3 to the solution containing Au seeds and placing it under the atmospheric pressure plasma. The growth of Ag shell on Au seeds was optimized and secondary nucleation was avoided by tuning the discharge current, precursor concentration, and stabilizer (d-fructose) concentration. The shell thickness of Ag was also changed by changing the concentration of AgNO3 in the solution. UV-Vis spectroscopy, scanning electron microscopy, and energy-dispersive x-ray spectroscopy were used to analyze the synthesized nanoparticles. Furthermore, the particles were employed for catalysis and surface enhanced Raman spectroscopy (SERS)-based molecular trace detection. The catalytic efficiency of the NPs was investigated for the reduction of four molecules, i.e., 4-nitrophenol, methyl orange, Congo red, and rhodamine B. The SERS-based trace detection was studied for rhodamine 6G using the substrates of synthesized NPs. In both cases, core-shell nanoparticles showed far superior performance compared to the seed Au nanoparticles.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"30 15","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140276995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Journal of Vacuum Science &amp; Technology B最新文献

Journal of Vacuum Science & Technology B最新文献