Journal of Vacuum Science & Technology B最新文献_第3页

Plasma confinement by an optoelectronic system 通过光电系统实现等离子体约束

Journal of Vacuum Science & Technology B Pub Date : 2024-04-22 DOI: 10.1116/6.0003520

Ryuta Tsukazaki, Haruhiro Naito, Hisashi Koga, Akito Fukuda, Naoki Kato, Takayuki Watanabe, Susumu Takabayashi

{"title":"Plasma confinement by an optoelectronic system","authors":"Ryuta Tsukazaki, Haruhiro Naito, Hisashi Koga, Akito Fukuda, Naoki Kato, Takayuki Watanabe, Susumu Takabayashi","doi":"10.1116/6.0003520","DOIUrl":"https://doi.org/10.1116/6.0003520","url":null,"abstract":"Plasma confinement was succeeded by an optoelectronic system with the aid of a vacuum ultraviolet (VUV) light source, called the photoemission-assisted plasma system. The photoemission-assisted plasma was generated by utilizing photoelectrons from the substrate cathode. The photoelectrons were emitted from the substrate by external VUV irradiation via the photoelectric effect and then worked as initial electrons triggering the plasma generation. The photoemission-assisted plasma was confined with bright luminescence in an argon atmosphere by controlling the flow rate and pressure. The plasma confinement survived at up to 6400 Pa, which was much higher than the pressure estimated from the current–voltage characteristics. These results suggested that the area exhibiting luminescence dominated by the γ regime becomes small as the argon flow rate increases; however, the area does not vanish because the VUV-excited photoelectrons are sufficiently supplied. The residual area is dominated by the α regime without luminescence. Thus, the photoemission-assisted plasma seems to be confined on the balance between α and γ regimes. Because the current in the α-regime area is one hundredth in magnitude compared with that in the γ-regime area, the actual current density results in over 40 times with strong luminescence. This confined plasma with certain voltage and current condition may be expected for developing a new plasma reaction system and for application in semiconductor engineering.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"30 10","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140677622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

New approach of local critical dimension uniformity improvement for via/contact hole etch with direct current superposition 利用直流叠加技术改善通孔/接触孔蚀刻局部临界尺寸均匀性的新方法

Journal of Vacuum Science & Technology B Pub Date : 2024-04-19 DOI: 10.1116/6.0003464

Emilia W. Hirsch, Dominik Metzler, Peng Wang

引用次数: 0

Erratum: “All field emission experiments are noisy, … are any meaningful?” [J. Vac. Sci. Technol. B 41, 024001 (2023)] 更正："所有场发射实验都有噪声，......有意义吗？[J. Vac. Sci. Technol. B 41, 024001 (2023)]

Journal of Vacuum Science & Technology B Pub Date : 2024-04-18 DOI: 10.1116/6.0003654

A. Ayari, P. Vincent, S. Perisanu, Philippe Poncharal, S. Purcell

引用次数: 0

Effects of high-temperature annealing on vacancy complexes and luminescence properties in multilayer periodic structures with elastically strained GeSiSn layers 高温退火对具有弹性应变 GeSiSn 层的多层周期结构中空位复合物和发光特性的影响

Journal of Vacuum Science & Technology B Pub Date : 2024-04-17 DOI: 10.1116/6.0003557

V. Timofeev, Ilya Skvortsov, V. Mashanov, Alexander Nikiforov, D. Kolyada, D. Firsov, Oleg Komkov, Samir Samadov, Alexey Sidorin, Oleg Orlov

{"title":"Effects of high-temperature annealing on vacancy complexes and luminescence properties in multilayer periodic structures with elastically strained GeSiSn layers","authors":"V. Timofeev, Ilya Skvortsov, V. Mashanov, Alexander Nikiforov, D. Kolyada, D. Firsov, Oleg Komkov, Samir Samadov, Alexey Sidorin, Oleg Orlov","doi":"10.1116/6.0003557","DOIUrl":"https://doi.org/10.1116/6.0003557","url":null,"abstract":"Effects of postgrowth high-temperature annealing on vacancy complexes and photoluminescence (PL) from GeSiSn/Si multiple quantum wells (MQWs) are studied. The series of PL peaks related to the vacancy-tin complexes was observed for as-grown samples including different structures, such as GeSiSn/Si MQWs, multilayer periodic structure with GeSiSn quantum dots (QDs), GeSn cross-structures upon GeSiSn/Si MQWs, and thick GeSiSn layers. The PL band intensity is significantly reduced after annealing at 700 °C corresponding to the reduction in vacancy density, as demonstrated by the positron annihilation spectroscopy (PAS) data. Such annealing also results in the appearance of the PL signal related to the interband optical transitions in GeSiSn/Si MQWs. However, the high temperature could negatively impact the sharpness of heterointerfaces due to Sn diffusion, thus limiting the PL efficiency. To improve the luminescence properties of GeSiSn/Si structures, we proposed a two-stage technique combining both the annealing and subsequent treatment of samples in a hydrogen plasma at 200 °C. The plasma treatment significantly reduces the PL band of vacancy-related defects, whereas annealing at a moderate temperature of ∼600 °C prevents the blurring of heterointerfaces. As a result, we demonstrate an increase in the relative efficiency of interband PL of type II GeSiSn/Si MQW structures emitting in the range of 1.5–2 μm.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"11 s2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140693293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Method to reconstruct three-dimensional profile based on top-view SEM images 基于顶视 SEM 图像重建三维轮廓的方法

Journal of Vacuum Science & Technology B Pub Date : 2024-04-17 DOI: 10.1116/6.0003471

Shuang Liu, Ge Liu, Hao Shen, Dinghai Rui, Libin Zhang, Yayi Wei

{"title":"Method to reconstruct three-dimensional profile based on top-view SEM images","authors":"Shuang Liu, Ge Liu, Hao Shen, Dinghai Rui, Libin Zhang, Yayi Wei","doi":"10.1116/6.0003471","DOIUrl":"https://doi.org/10.1116/6.0003471","url":null,"abstract":"In the field of integrated circuits, electron beam images can provide process parameter information such as linewidth and line spacing. However, this size information only accounts for a small proportion of the information that the image can provide. To maximize the information obtained from electron beam images, this paper proposes a three-dimensional reconstruction method based on the electron beam imaging model. This method reveals the relationship between the top-view scanning electron microscopy (SEM) image and the actual three-dimensional structure. And then, an iterative optimization method is used to optimize the model and structure parameters for 3D reconstructions. During optimization flow, the correlation between the real SEM image and the reconstructed image is used to build the cost function. Two-micrometer silicon structures, vertical edge, and rounded sidewall structures are applied to model verification. Results show that the proposed model, with a fitting correlation over 99.3% and edge-angle mismatch within 1°, does well in rebuilding both structures. Our method makes it possible for high-precision 3D profile metrology and defect inspection.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":" 54","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140692239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Cryogenic etching of positively tapered silicon pillars with controllable profiles 低温蚀刻具有可控轮廓的正锥形硅柱

Journal of Vacuum Science & Technology B Pub Date : 2024-04-16 DOI: 10.1116/6.0003372

Xiaoli Zhu, Aixi Pan, Babak Shokouhi, Bo Cui

引用次数: 0

Characteristics of β-(AlxGa1−x)2O3/Ga2O3 dual-metal gate modulation-doped field-effect transistors simulated by TCAD 用 TCAD 模拟的β-(AlxGa1-x)2O3/Ga2O3 双金属栅调制掺杂场效应晶体管的特性

Journal of Vacuum Science & Technology B Pub Date : 2024-04-16 DOI: 10.1116/6.0003502

X. Jia, Yibo Wang, C. Fang, Bochang Li, Zhengdong Luo, Yan Liu, Yue Hao, Genquan Han

{"title":"Characteristics of β-(AlxGa1−x)2O3/Ga2O3 dual-metal gate modulation-doped field-effect transistors simulated by TCAD","authors":"X. Jia, Yibo Wang, C. Fang, Bochang Li, Zhengdong Luo, Yan Liu, Yue Hao, Genquan Han","doi":"10.1116/6.0003502","DOIUrl":"https://doi.org/10.1116/6.0003502","url":null,"abstract":"β-(AlxGa1−x)2O3/Ga2O3 modulation-doped field-effect transistors (MODFETs) with a dual-metal gate (DMG) architecture are designed, and the electrical characteristics of the DMG device are investigated in comparison with the single-metal gate (SMG) device by the Technology Computer-Aided Design (TCAD) simulation. The results demonstrate that the DMG MODFETs possess a superior transconductance (gm), current gain cut-off frequency (fT), and power gain cut-off frequency (fMAX) than those of SMG transistors, which is attributed to the regulated channel electric field by a DMG structure. With a gate length of 0.1 μm, the peak values of fT/fMAX of the designed DMG MODFET are obtained as 48.6/50.6 GHz, respectively. Moreover, a comprehensive thermal analysis is conducted between the SMG and DMG devices under steady-state and transient conditions. The DMG MODFET exhibits a lower maximum temperature than the SMG counterpart due to the reduced channel electric field, each subjected to the same power dissipation. This finding underscores the potential of the β-(AlxGa1−x)2O3/Ga2O3 MODFET with the DMG architecture as a promising approach for high-power radio frequency operations.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"18 10","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140696558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Study of defects population and contaminations in silica/tantala coated mirrors 二氧化硅/钽涂层反射镜中的缺陷群和污染研究

Journal of Vacuum Science & Technology B Pub Date : 2024-04-12 DOI: 10.1116/6.0003510

D. D’Ubaldo, M. Sbroscia, V. C. Ficca, E. Stellino, A. Pasqualetti, D. Sentenac, J. Gargiulo, L. Francescon, L. Pinard, E. Placidi

引用次数: 0

Experimental study of flake graphite large-area explosion electron emission cathode performance based on particle size discrepancy 基于粒度差异的鳞片石墨大面积爆炸电子发射阴极性能实验研究

Journal of Vacuum Science & Technology B Pub Date : 2024-04-10 DOI: 10.1116/6.0003373

Tingxu Chen, Tianming Li, Liu Yang, Hao Li, Haiyang Wang, Renjie Cheng, Jiaoyin Wang, Hao Zhou, B. Hu, Hao Fu

{"title":"Experimental study of flake graphite large-area explosion electron emission cathode performance based on particle size discrepancy","authors":"Tingxu Chen, Tianming Li, Liu Yang, Hao Li, Haiyang Wang, Renjie Cheng, Jiaoyin Wang, Hao Zhou, B. Hu, Hao Fu","doi":"10.1116/6.0003373","DOIUrl":"https://doi.org/10.1116/6.0003373","url":null,"abstract":"Graphite is the most commonly used large-area cathode material in the high-power vacuum electron device for its long life and good repetitive-frequency performance, but its particle size selection scheme has not been elucidated. Therefore, in the present work, the explosive electron emission properties of flake graphite large area explosive electron emission cathodes with varied particle sizes are studied. The 320 mesh flake graphite has a current delay reduction of 0.2–0.9 ns compared to other samples at the same peak voltage. According to the Murphy–Good equation, the emission performance of each sample during the priming stage was calculated, and the threshold characteristics of 320 mesh flake graphite were significantly better than the other samples. After the space charge limited current is formed, the plasma expansion rate of all samples is 1.2±0.2cm/μs with a difference not exceeding 4% between samples. Our research provides a strong basis for the selection of raw materials for graphite based large area explosive electron emission cathodes and contributes to the development of cross-field high-power vacuum devices.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"44 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140716758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Wet and dry etching of ultrawide bandgap LiGa5O8 and LiGaO2 湿法和干法蚀刻超宽带隙 LiGa5O8 和 LiGaO2

Journal of Vacuum Science & Technology B Pub Date : 2024-04-09 DOI: 10.1116/6.0003450

Vijaygopal Thirupakuzi Vangipuram, Kaitian Zhang, Hongping Zhao

{"title":"Wet and dry etching of ultrawide bandgap LiGa5O8 and LiGaO2","authors":"Vijaygopal Thirupakuzi Vangipuram, Kaitian Zhang, Hongping Zhao","doi":"10.1116/6.0003450","DOIUrl":"https://doi.org/10.1116/6.0003450","url":null,"abstract":"Crystalline thin films of LiGa5O8 have recently been realized through epitaxial growth via mist-chemical vapor deposition. The single crystal, spinel cubic LiGa5O8 films show promising fundamental material properties and, therefore, make LiGa5O8 a potential enabling material for power electronics. In this work, chemical resistance and etch susceptibility were investigated for the first time on crystalline LiGa5O8 thin films with various wet chemistries. It was found that LiGa5O8 is very chemically resistive to acid solutions, with no apparent etching effects observed when placed in concentrated acid solutions of HCl, H2SO4, HF, or H3PO4 at room temperature. In contrast, orthorhombic (010) LiGaO2 shows effective etching in HCl solutions at varying dilution concentrations, with etch rates measured between 8.6 [1000:1 (DI water: HCl concentration)] and 6092 nm/min (37 wt. % HCl). The inductively coupled plasma reactive ion etching (ICP-RIE) of LiGa5O8 using BCl3/Ar and CF4/Ar/O2 gas chemistries was investigated. The etching rate and surface morphology of etched surfaces were examined as a function of RIE and ICP power. Using a CF4/Ar/O2 gas chemistry with an RIE power of 75 W and an ICP power of 300 W resulted in smooth etched planar surfaces while maintaining an etch rate of ∼24.6 nm/min. Similar dry etching studies were performed for LiGaO2. It was found that the BCl3/Ar gas chemistry was better suited for LiGaO2 etching, with similar surface morphology quality being obtained after etching as prior etching when a RIE power of 15 W and an ICP power of 400 W is utilized.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"35 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140727630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Journal of Vacuum Science &amp; Technology B最新文献

Journal of Vacuum Science & Technology B最新文献