New approach of local critical dimension uniformity improvement for via/contact hole etch with direct current superposition

Emilia W. Hirsch, Dominik Metzler, Peng Wang
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Abstract

As feature sizes continue to shrink for more advanced nodes, local critical dimension (CD) uniformity (LCDU) control becomes more critical than ever for improving defectivity, edge placement error, and yield enhancement. In this work, we developed a new approach utilizing an Ar plasma treatment with a direct current superposition function at low-temperature post patterning stack open. Our results demonstrated that this approach was capable of breaking the trade-off between CD shrink, LCDU improvement, and defectivity reduction. We significantly reduced the LCDU from 1.64 to 1.26 nm at the same CD level (∼10 nm). In contrast, no LCDU reduction was observed with the traditional CD shrink approach through trilayer process tuning. The mechanism for the LCDU improvement was investigated, and a hypothesis was proposed. We believe both the defect mitigation of the organic planarization layer profile and the vertical loading effect together with top sealing and in situ planarization contributed to the final LCDU improvement.
利用直流叠加技术改善通孔/接触孔蚀刻局部临界尺寸均匀性的新方法
随着更先进节点的特征尺寸不断缩小,局部临界尺寸(CD)均匀性(LCDU)控制对于改善缺陷率、边缘贴装误差和提高成品率变得比以往任何时候都更为重要。在这项工作中,我们开发了一种新方法,利用氩等离子体处理和直流叠加功能,在低温后图案化堆栈打开。我们的研究结果表明,这种方法能够打破 CD 缩小、LCDU 改善和缺陷减少之间的权衡。在相同的 CD 水平(∼10 nm)下,我们将 LCDU 从 1.64 nm 大幅降至 1.26 nm。与此相反,通过三层工艺调整的传统 CD 收缩方法没有观察到 LCDU 的减少。我们对 LCDU 改善的机制进行了研究,并提出了一个假设。我们认为,有机平面化层剖面的缺陷缓解和垂直加载效应以及顶部密封和原位平面化共同促成了最终的 LCDU 改善。
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