Temperature-dependent morphology and composition of ultra-thin GeSn epilayers prepared by remote plasma enhanced chemical vapor deposition

Jiechao Jiang, Nonso Chetuya, E. Meletis, Joseph H. Ngai, Gordon J. Grzybowski, Bruce Claflin
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Abstract

Two distinct ultra-thin Ge1−xSnx (x ≤ 0.1) epilayers were deposited on (001) Si substrates at 457 and 313 °C through remote plasma-enhanced chemical vapor deposition. These films are considered potential initiation layers for synthesizing thick epitaxial GeSn films. The GeSn film deposited at 313 °C has a thickness of 10 nm and exhibits a highly epitaxial continuous structure with its lattice being compressed along the interface plane to coherently match Si without mismatch dislocations. The GeSn film deposited at 457 °C exhibits a discrete epitaxial island-like morphology with a peak height of ∼30 nm and full-width half maximum (FWHM) varying from 20 to 100 nm. GeSn islands with an FWHM smaller than 20 nm are defect free, whereas those exceeding 25 nm encompass nanotwins and/or stacking faults. The GeSn islands form two-dimensional modulated superlattice structures at the interface with Si. The GeSn film deposited at 457 °C possesses a lower Sn content compared to the one deposited at lower temperature. The potential impact of using these two distinct ultra-thin layers as initiation layers for the direct growth of thicker GeSn epitaxial films on (001) Si substrates is discussed.
远程等离子体增强化学气相沉积法制备的超薄 GeSn 外延层的形貌和组成与温度有关
通过远程等离子体增强化学气相沉积,在 457 和 313 ℃ 下在 (001) 硅基底上沉积了两层不同的超薄 Ge1-xSnx (x ≤ 0.1)外延层。这些薄膜被认为是合成厚外延 GeSn 薄膜的潜在引发层。在 313 °C 下沉积的 GeSn 薄膜厚度为 10 nm,具有高度外延连续结构,其晶格沿界面平面被压缩,与硅相一致,没有错配位错。在 457 °C 下沉积的 GeSn 薄膜呈现出离散的外延岛状形态,峰高为 ∼ 30 nm,全宽半最大值 (FWHM) 在 20 到 100 nm 之间。FWHM 小于 20 nm 的 GeSn 岛无缺陷,而 FWHM 超过 25 nm 的 GeSn 岛则包含纳米孪晶和/或堆叠断层。GeSn 岛在与硅的界面上形成二维调制超晶格结构。与在较低温度下沉积的薄膜相比,在 457 °C 下沉积的 GeSn 薄膜的锡含量较低。本文讨论了使用这两种不同的超薄层作为引发层,在 (001) 硅衬底上直接生长较厚 GeSn 外延薄膜的潜在影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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