Carlos Rodriguez, Jairo Viola, Yangquan Chen, Joaquín Álvarez
{"title":"用于半导体等离子体蚀刻的 L 型网络阻抗匹配建模与控制","authors":"Carlos Rodriguez, Jairo Viola, Yangquan Chen, Joaquín Álvarez","doi":"10.1116/6.0003444","DOIUrl":null,"url":null,"abstract":"The plasma process plays a pivotal role in the semiconductor industry, facilitating the creation of transistors and memory storage cells. This fourth state of matter is achieved by energizing a gas with radio-frequency electrical power, initiating and maintaining a stable plasma during the process cycles. Given that plasma behaves as an impedance component, an impedance-matching network becomes essential for optimizing power transfer from the source to the load (plasma). While various control strategies have been proposed for different network configurations, such as L, T, and Π networks, our work focuses on the L-type network due to its simplicity and extensive application in this domain. Several significant challenges have been identified in the existing literature, including slow dynamics, a non-monotonic decline in the reflected power, and substantial deviation in the capacitors’ path. These issues collectively impact the overall performance of the matching control system. In this article, we present a new methodology to obtain a nonlinear state-space model of the matching network for its analysis and design a proportional-integral combined with feedforward control and a control Lyapunov-barrier function to assess their effectiveness in achieving convergence to the desired matching value and guiding the path of the capacitors. These approaches aim to mitigate the recurring issues caused by capacitors moving in the wrong direction, thus improving the stability and efficiency of the impedance-matching process over time.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"59 5","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Modeling and control of L-type network impedance matching for semiconductor plasma etch\",\"authors\":\"Carlos Rodriguez, Jairo Viola, Yangquan Chen, Joaquín Álvarez\",\"doi\":\"10.1116/6.0003444\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The plasma process plays a pivotal role in the semiconductor industry, facilitating the creation of transistors and memory storage cells. This fourth state of matter is achieved by energizing a gas with radio-frequency electrical power, initiating and maintaining a stable plasma during the process cycles. Given that plasma behaves as an impedance component, an impedance-matching network becomes essential for optimizing power transfer from the source to the load (plasma). While various control strategies have been proposed for different network configurations, such as L, T, and Π networks, our work focuses on the L-type network due to its simplicity and extensive application in this domain. Several significant challenges have been identified in the existing literature, including slow dynamics, a non-monotonic decline in the reflected power, and substantial deviation in the capacitors’ path. These issues collectively impact the overall performance of the matching control system. In this article, we present a new methodology to obtain a nonlinear state-space model of the matching network for its analysis and design a proportional-integral combined with feedforward control and a control Lyapunov-barrier function to assess their effectiveness in achieving convergence to the desired matching value and guiding the path of the capacitors. These approaches aim to mitigate the recurring issues caused by capacitors moving in the wrong direction, thus improving the stability and efficiency of the impedance-matching process over time.\",\"PeriodicalId\":282302,\"journal\":{\"name\":\"Journal of Vacuum Science & Technology B\",\"volume\":\"59 5\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Vacuum Science & Technology B\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1116/6.0003444\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Vacuum Science & Technology B","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1116/6.0003444","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
等离子体工艺在半导体工业中发挥着举足轻重的作用,有助于晶体管和存储单元的制造。这种第四种物质状态是通过用射频电能给气体通电来实现的,在工艺循环过程中启动并保持稳定的等离子体。鉴于等离子体是一种阻抗元件,阻抗匹配网络对于优化从源到负载(等离子体)的功率传输至关重要。虽然针对不同的网络配置(如 L、T 和 Π 网络)提出了各种控制策略,但我们的工作重点是 L 型网络,因为它简单易用,而且在该领域应用广泛。在现有文献中发现了一些重大挑战,包括缓慢的动态、反射功率的非单调下降以及电容器路径的巨大偏差。这些问题共同影响了匹配控制系统的整体性能。在本文中,我们提出了一种新方法来获取匹配网络的非线性状态空间模型进行分析,并设计了一种比例积分结合前馈控制和控制 Lyapunov 屏障函数,以评估它们在实现收敛到所需匹配值和引导电容器路径方面的有效性。这些方法旨在缓解电容器移动方向错误造成的反复问题,从而提高阻抗匹配过程的长期稳定性和效率。
Modeling and control of L-type network impedance matching for semiconductor plasma etch
The plasma process plays a pivotal role in the semiconductor industry, facilitating the creation of transistors and memory storage cells. This fourth state of matter is achieved by energizing a gas with radio-frequency electrical power, initiating and maintaining a stable plasma during the process cycles. Given that plasma behaves as an impedance component, an impedance-matching network becomes essential for optimizing power transfer from the source to the load (plasma). While various control strategies have been proposed for different network configurations, such as L, T, and Π networks, our work focuses on the L-type network due to its simplicity and extensive application in this domain. Several significant challenges have been identified in the existing literature, including slow dynamics, a non-monotonic decline in the reflected power, and substantial deviation in the capacitors’ path. These issues collectively impact the overall performance of the matching control system. In this article, we present a new methodology to obtain a nonlinear state-space model of the matching network for its analysis and design a proportional-integral combined with feedforward control and a control Lyapunov-barrier function to assess their effectiveness in achieving convergence to the desired matching value and guiding the path of the capacitors. These approaches aim to mitigate the recurring issues caused by capacitors moving in the wrong direction, thus improving the stability and efficiency of the impedance-matching process over time.