SPIE ITCom最新文献

{"title":"Time-domain modeling and simulation of the broadband behavior of semiconductor optical amplifiers","authors":"Xun Li, Jongwoon Park","doi":"10.1117/12.513993","DOIUrl":"https://doi.org/10.1117/12.513993","url":null,"abstract":"Unlike semiconductor lasers that always operate within a narrow band in frequency domain, semiconductor optical amplifiers (SOAs) normally operate in a much broader area. The noise characteristic is also crucial for amplifier design. The study of the dynamic interaction among the signal channels and noise in SOAs is therefore highly demanded. In this work, a time-domain model is implemented based on the combination of the traveling wave equation, the effective Bloch equation and the modified carrier rate equation. The optical field propagation is described by the traveling wave equation. The interaction between the optical field and the polarization is treated by the effective Bloch equation hence both homogeneous and inhomogeneous gain broadenings over the entire operating frequency range is naturally considered. Finally, the carrier rate equation is modified to make the model self-sustaining. This model has the spontaneous emission noise incorporated hence effects such as noise introduced gain saturation, beatings among different signal channels and the noise are all captured. The key feature of this model is its capability of handling the signal-signal and the signal-noise indirect and direct interactions, generated by the mutual power saturation and the spectral hole burning (SHB), respectively. This model is implemented and validated through comparisons, and is also applied for the simulation of a typical SOA with an assumed operating condition that can hardly be treated accurately by other existing models.","PeriodicalId":282161,"journal":{"name":"SPIE ITCom","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133882410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Low noise telcommunications APDs","authors":"A. Holmes, J. Campbell, Xiaoguang Sun, Shuling Wang, R. Sidhu, Xiaoguang G. Zheng, Xiaowei Li","doi":"10.1117/12.512954","DOIUrl":"https://doi.org/10.1117/12.512954","url":null,"abstract":"Avalanche Photodiodes (APDs) are key components in modern lightwave communications systems. When compared to p-i-n diodes, APDs provide internal gain via impact ionization which leads to higher sensitivity. In addition, with proper device design, high gain bandwidth products can also be achieved. In this paper, we describe our work in making high speed, low noise APDs - operating at 1300 - using GaAs based multiplication regions. Our results to date have lead to a resonant cavity enhanced (RCE) APD, operating at 1310 nm, with an external quantum efficiency of 36% and an effective k factor of 0.1.","PeriodicalId":282161,"journal":{"name":"SPIE ITCom","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121773913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Semiconductor electrorefractive modulators","authors":"E. Kunkee, Qisheng Chen, S. Holm, J. Ho, C. Shih, P. M. Livingston, J. Kraus, L. Lembo","doi":"10.1117/12.513107","DOIUrl":"https://doi.org/10.1117/12.513107","url":null,"abstract":"Experimental and analytical results for semiconductor electro-refractive modulators will be presented. Modulation structures investigated include quantum wells, coupled quantum wells and quantum dots.","PeriodicalId":282161,"journal":{"name":"SPIE ITCom","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122585865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Integrated-cavity surface-emitting lasers","authors":"B. Liu, Y. Okuno, J. Piprek, J. Bowers","doi":"10.1117/12.513513","DOIUrl":"https://doi.org/10.1117/12.513513","url":null,"abstract":"A novel integrated cavity surface emitting laser (ICSEL) is proposed in this paper. An ICSEL integrates two different laser structures. One is an in-plane laser with a short lasing wavelength, and the other is a vertical cavity laser structure with a long lasing wavelength. The in-plane laser is used as the light source for optical pumping the VCSEL. By monolithic integration of both the laser structures, some problems related to electrically pumped VCSELs, especially long wavelength VCSELs, and externally optically pumped VCSELs can be solved.","PeriodicalId":282161,"journal":{"name":"SPIE ITCom","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129092569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Wafer-bonded VCSELs with tunnel junctions","authors":"M. Mehta, V. Jayaraman, A. Jackson, Shaomin Wu, Y. Okuno, J. Piprek, J. Bowers","doi":"10.1117/12.511773","DOIUrl":"https://doi.org/10.1117/12.511773","url":null,"abstract":"We introduce a scheme incorporating wafer bonding and tunnel junctions to improve the performance long-wavelength Vertical Cavity Surface Emitting Lasers (VCSELs). Through careful design of PL-mode offset, mirror reflectivity, and aperture definition, we achieve lasing to 134°C, output power above 2 mW, single-mode output power at 80°C above 1 mW, and differential efficiencies of 46%. We achieve lasing at wavelengths as high as 1336 nm and show a versatile design that can be applied to any VCSEL functioning at long wavelengths.","PeriodicalId":282161,"journal":{"name":"SPIE ITCom","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134303559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"1.3-μm GaAsSb/GaAs VCSELs","authors":"P. Dowd, S. Johnson, S. Chaparro, S. Feld, M. Horning, M. Adamcyk, Yong-Hang Zhang","doi":"10.1117/12.512732","DOIUrl":"https://doi.org/10.1117/12.512732","url":null,"abstract":"Room-temperature continuous wave operation of Antimonide-based long wavelength VCSELs has been demonstrated, with 1.2mW power output at 1266nm, the highest figure reported so far using this material system. Single mode powers of 0.3mW at 10°C and 0.1mW at 70°C and side-mode suppression ratios up to 42dB have also been achieved. Preliminary reliability test results have shown so far that the devices can work normally without obvious degradation after stress testing at up to 125°C for thousands of hours.","PeriodicalId":282161,"journal":{"name":"SPIE ITCom","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121308454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Red surface emitters: powerful and fast","authors":"H. Schweizer, Tabitha Ballmann, R. Butendeich, R. Rossbach, B. Raabe, M. Jetter, F. Scholz","doi":"10.1117/12.512626","DOIUrl":"https://doi.org/10.1117/12.512626","url":null,"abstract":"Vertical cavity surface emitting lasers (VCSEL) in the GaInP/AlGaInP material system have experienced a rapid development in their short history. In general lasers from that material system are suitable for a huge number of applications beginning with TV lasers and high power lasers for edge emitters, continuing with optical data storage, medical applications as well as data communication in cars, air planes, offices and between computers as application field for VCSELs. Especially automotive applications show the highest requirements on a laser with respect to operation temperature and power. In this talk we draw out the problems of the material system AlGaInP and its implications for laser applications. We discuss the epitaxial and technological solutions to overcome at least a part of these inherent problems. We will discuss the possible power that we can expect from VCSELs emitting in the range between 650 nm to 670 nm. We got from our lasers 5 mW, CW @ RT, 670nm and 2.5mW, CW@RT, 650 nm. We emphasize the role of doping, Bragg mirror grading, suitable detuning of cavity mode and gain, and optimisation of the contact layer and control of the oxide aperture in the VCSEL structure to get improved operation characteristics at higher temperatures. From the analysis of high frequency measurements, we could evaluate modulation bandwidths between 4 GHz and 10 GHz. The application of polyimide as a dielectric isolation material shows the potential to obtain modulation bandwidths beyond 10 GHz. For the intrinsic modulation bandwidth we get a value of 25 GHz, which is near the value edge emitters show. A more detailed discussion on photon lifetimes and carrier transport times will be given in the talk. Red light emitting VCSELS driven with short current pulses showed laser emission up to + 160°C case temperature. Thus, a CW operation up to +120°C can be expected after further improvement of power generation (decrease of series resistance) and heat spreading (optimized contacts and mounting). From these characteristics we can conclude that AlGaInP-surface emitting lasers have a real potential as low cost lasers for automotive applications as we all as data communication applications up to 10 GHz.","PeriodicalId":282161,"journal":{"name":"SPIE ITCom","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123492967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"CW theory for optical fiber photon-pair generation","authors":"P. Voss, K. G. Koprulu, Premjeet Kumar","doi":"10.1117/12.512466","DOIUrl":"https://doi.org/10.1117/12.512466","url":null,"abstract":"We derive a CW theory for optical-fiber photon-pair sources, including the effect of non-zero response time of the fiber's Kerr nonlinearity. We also include the effects of realistic transmission and detection losses. This theory predicts stronger photon-number correlations than seen experimentally with a pulsed pump, showing the need for development of a pulsed pump theory.","PeriodicalId":282161,"journal":{"name":"SPIE ITCom","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121222341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optical local area networking using CWDM","authors":"I. White, R. Penty, J. Hankey, K. Williams, G. F. Roberts, M. Glick, D. Mcauley","doi":"10.1117/12.514661","DOIUrl":"https://doi.org/10.1117/12.514661","url":null,"abstract":"This paper describes the current status of Coarse Wavelength Division Multiplexing (CWDM), and then progresses to discuss how it may evolve in networking applications in the future. As WDM can enhance not only transmission but also networking systems, the paper reports a potentially low cost WDM based access node architecture, particularly suited for routing optical data packets on nanosecond timescales. The scheme is cascadable and involves the use of a simple semiconductor optical amplifier (SAO) based add-drop switch. Preliminary results concerning the operation of the add-drop switches under multi-wavelength operation are reported.","PeriodicalId":282161,"journal":{"name":"SPIE ITCom","volume":"1 7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133121140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Audio fingerprint extraction for content identification","authors":"Yu Shiu, C. Yeh, C.-C. Jay Kuo","doi":"10.1117/12.511271","DOIUrl":"https://doi.org/10.1117/12.511271","url":null,"abstract":"In this work, we present an audio content identification system that identifies some unknown audio material by comparing its fingerprint with those extracted off-line and saved in the music database. We will describe in detail the procedure to extract audio fingerprints and demonstrate that they are robust to noise and content-preserving manipulations. The main feature in the proposed system is the zero-crossing rate extracted with the octave-band filter bank. The zero-crossing rate can be used to describe the dominant frequency in each subband with a very low computational cost. The size of audio fingerprint is small and can be efficiently stored along with the compressed files in the database. It is also robust to many modifications such as tempo change and time-alignment distortion. Besides, the octave-band filter bank is used to enhance the robustness to distortion, especially those localized on some frequency regions.","PeriodicalId":282161,"journal":{"name":"SPIE ITCom","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122026116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}