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Cost-effective monolithic and hybrid integration for metro and long-haul applications 具有成本效益的单片和混合集成地铁和长途应用
SPIE ITCom Pub Date : 2003-12-08 DOI: 10.1117/12.512989
R. Clayton, A. Carter, I. Betty, T. Simmons
{"title":"Cost-effective monolithic and hybrid integration for metro and long-haul applications","authors":"R. Clayton, A. Carter, I. Betty, T. Simmons","doi":"10.1117/12.512989","DOIUrl":"https://doi.org/10.1117/12.512989","url":null,"abstract":"Today's telecommunication market is characterized by conservative business practices: tight management of costs, low risk investing and incremental upgrades, rather than the more freewheeling approach taken a few years ago. Optimizing optical components for the current and near term market involves substantial integration, but within particular bounds. The emphasis on evolution, in particular, has led to increased standardization of functions and so created extensive opportunities for integrated product offerings. The same standardization that enables commercially successful integrated functions also changes the competitive environment, and changes the emphasis for component development; shifting the innovation priority from raw performance to delivering the most effective integrated products. This paper will discuss, with specific examples from our transmitter, receiver and passives product families, our understanding of the issues based on extensive experience in delivering high end integrated products to the market, and the direction it drives optical components.","PeriodicalId":282161,"journal":{"name":"SPIE ITCom","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124383281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Developments in linear optical amplifier technology 线性光放大器技术的发展
SPIE ITCom Pub Date : 2003-12-08 DOI: 10.1117/12.513201
A. Verma, R. P. Ratowsky, D. Francis, S. Dijaili, J. Walker
{"title":"Developments in linear optical amplifier technology","authors":"A. Verma, R. P. Ratowsky, D. Francis, S. Dijaili, J. Walker","doi":"10.1117/12.513201","DOIUrl":"https://doi.org/10.1117/12.513201","url":null,"abstract":"The Linear Optical Amplifier (LOA) is a chip-based amplifier that addresses many of the requirements of emerging optical networks: operation under diverse bit rates, channel counts, and switching protocols, as well as reduced cost and size. In this work, we review the operating principles of the LOA, and describe two versions of the LOA technology. The first is a polarization-independent amplifier that operates over the entire C-band. We present several examples of this technology's system performance, and also highlight its value in coarse wavelength-division multiplexing (CWDM) applications. We also demonstrate a new, single polarization LOA technology, which is designed to deliver high linear gain over an extended range of output powers. We measure typical chip gains in excess of 20dB, and demonstrate linear gain performance for an (average) chip power approaching 15dBm. These results indicate that this technology is well-suited for long-reach, 10Gbps transmitter boost applications.","PeriodicalId":282161,"journal":{"name":"SPIE ITCom","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130728731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Characterization of integrated Bragg gratings on silicon-on-insulator rib waveguides 绝缘体上硅肋波导上集成布拉格光栅的特性研究
SPIE ITCom Pub Date : 2003-12-08 DOI: 10.1117/12.511138
S. Chan, V. Passaro, S. Lim, C. Png, W. Headley, G. Masanovic, G. Reed, R. M. Atta, G. Ensell, A. Evans
{"title":"Characterization of integrated Bragg gratings on silicon-on-insulator rib waveguides","authors":"S. Chan, V. Passaro, S. Lim, C. Png, W. Headley, G. Masanovic, G. Reed, R. M. Atta, G. Ensell, A. Evans","doi":"10.1117/12.511138","DOIUrl":"https://doi.org/10.1117/12.511138","url":null,"abstract":"Waveguide based Bragg grating devices have the potential of integration with passive or active optical components. A narrow bandwidth Bragg reflection filter or Fabry-Perot resonant structures can be realised using the approach of periodic refractive index modulation in waveguide gratings to form reflective structures. Most authors have considered 1st order Bragg gratings with periods of the order of 228nm operating at 1550nm but at the expense of complexity and high cost of fabrication. This paper describes the design of Silicon-On-Insulator (SOI) rib waveguides operating in the single mode regime that exhibit low polarisation dependence. A rigorous leaky mode propagation method (LMP) has been used to investigate the influence of etch depth in 3rd order Bragg gratings on the reflectance and bandwidth in the waveguides.","PeriodicalId":282161,"journal":{"name":"SPIE ITCom","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133260524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Simulation performance of ASE-XGM wavelength converter for spectrum-sliced WDM system 用于波分复用系统的ASE-XGM波长转换器的仿真性能
SPIE ITCom Pub Date : 2003-12-08 DOI: 10.1117/12.511050
S. Baruh, M. Martinez, M. R. Rocco Giraldi
{"title":"Simulation performance of ASE-XGM wavelength converter for spectrum-sliced WDM system","authors":"S. Baruh, M. Martinez, M. R. Rocco Giraldi","doi":"10.1117/12.511050","DOIUrl":"https://doi.org/10.1117/12.511050","url":null,"abstract":"We evaluate the performance of a wavelength conversion technique based on the modulation of the amplified spontaneous emission of semiconductor optical amplifiers through simulation software. Unlike conventional conversion technique the ASE-XGM does not require a CW probe signal. The converted wavelength is determined by an optical filter, which slices the modulated ASE spectrum. We focus on bit error rate (BER)conversion performance of a 2.5 Gbit/s non-return to zero, pseudo-random sequence of order 11. BER values better than 10-9 are achieved for signal input power ranging from -6 dBm to 0 dBm, and for a slicing filter centered around 0.4 nm red shifted from signal wavelength.","PeriodicalId":282161,"journal":{"name":"SPIE ITCom","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115457690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
1310-nm asymmetric single mode grating-outcoupled surface-emitting semiconductor laser with a broadband and a narrowband DBR reflector 具有宽带和窄带DBR反射器的1310nm非对称单模光栅外耦合表面发射半导体激光器
SPIE ITCom Pub Date : 2003-12-08 DOI: 10.1117/12.511413
T. Masood, S. Patterson, N. Amarasinghe, S. McWilliams, D. Phan, Darren Lee, Zuhair A. Hilali, Xiong Zhang, G. Evans, J. Butler
{"title":"1310-nm asymmetric single mode grating-outcoupled surface-emitting semiconductor laser with a broadband and a narrowband DBR reflector","authors":"T. Masood, S. Patterson, N. Amarasinghe, S. McWilliams, D. Phan, Darren Lee, Zuhair A. Hilali, Xiong Zhang, G. Evans, J. Butler","doi":"10.1117/12.511413","DOIUrl":"https://doi.org/10.1117/12.511413","url":null,"abstract":"A 1310 nm single-frequency grating-outcoupled surface-emitting (GSE) semiconductor laser with output slope efficiency exceeding 0.05 mW/mA into a multimode fiber, threshold current below 20mA and > 30dB side-mode suppression ratio is reported. The GSE laser consists of a 500μm long active ridge that excites one end of a surface emitting second-order (outcoupler) grating with a broadband reflector terminating the laser cavity at the end of the outcoupler. At the opposite end of the outcoupler is a 200μm long first order distributed Bragg reflector (DBR). The emitting output aperture is approximately 10μm in length. Higher output power is possible for outcoupler lengths greater than 10 um. The GSE laser has an open eye pattern for a nonreturn-to-zero signal at 2.5 Gb/s into a single mode fiber. The far-field beam divergence measured at full-width half-maximum (FWHM) is 5 x 8 degrees.","PeriodicalId":282161,"journal":{"name":"SPIE ITCom","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124664912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Development of GaInNAs-based 1.3-μm VCSEL 基于gainnas的1.3 μm VCSEL的研制
SPIE ITCom Pub Date : 2003-12-08 DOI: 10.1117/12.510463
Arun Ramakrishnan, G. Ebbinghaus, A. Lima, D. Supper, G. Kristen, M. Popp, C. Degen, H. Althaus, T. Killer, R. Scholz, M. Melinde, M. Sauter, M. Weigert, H. Riechert, G. Steinle
{"title":"Development of GaInNAs-based 1.3-μm VCSEL","authors":"Arun Ramakrishnan, G. Ebbinghaus, A. Lima, D. Supper, G. Kristen, M. Popp, C. Degen, H. Althaus, T. Killer, R. Scholz, M. Melinde, M. Sauter, M. Weigert, H. Riechert, G. Steinle","doi":"10.1117/12.510463","DOIUrl":"https://doi.org/10.1117/12.510463","url":null,"abstract":"In this paper the realization, development and production of 1.3μm vertical cavity surface emitting lasers (VCSEL) with datacom suitable performance are presented. These low cost laser diodes are well suited for optical interconnect applications for LAN and MAN with transmission distances up to 15 km. The possibilities as well as the advantages and limits of shifting the wavelength from commercially available VCSEL emitting at 850nm to 1300nm are discussed. 1300nm VCSELs in a low cost SMD plastic package assembled into an intelligent SFP-module developed by Infineon Technologies are demonstrated.","PeriodicalId":282161,"journal":{"name":"SPIE ITCom","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128043284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Wavelength-agile integrated optical transmitters for analog applications 用于模拟应用的波长敏捷集成光发射机
SPIE ITCom Pub Date : 2003-12-08 DOI: 10.1117/12.511378
L. Johansson, Chin-Hui Chen, Y. Akulova, G. Fish, L. Coldren
{"title":"Wavelength-agile integrated optical transmitters for analog applications","authors":"L. Johansson, Chin-Hui Chen, Y. Akulova, G. Fish, L. Coldren","doi":"10.1117/12.511378","DOIUrl":"https://doi.org/10.1117/12.511378","url":null,"abstract":"A summary of current work involving the development of high performance, wavelength-tunable integrated optical transmitters for analog applications is given. The performance of sampled-grating DBR lasers integrated with an SOA and an electroabsorption or Mach-Zehnder modulator is evaluated in terms of E/O conversion efficiency, noise performance and dynamic range. Optimization options to maximize either gain, noise figure or spurious-free dynamic range in analog link applications are discussed. It is shown how the combination of chip-scale integration and the use of bulk waveguide Franz-Keldysh absorption allows coupling of a large optical power level into the electroabsorption modulator, and its effects on the modulation response and analog link performance. Link results on an integrated SGDBR-SOA-EAM device includes a sub-octave SFDR in the 125 to 127 dB/Hz4/5 range and a broadband SFDR of 103-107 dB/Hz2/3 limited by third order intermodulation products or 95-98 dB/Hz1/2, limited by second order intermodulation products, over a 1528 to 1573 nm wavelength range.","PeriodicalId":282161,"journal":{"name":"SPIE ITCom","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130208739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High-efficiency triggered photons using single-cavity mode coupling of single quantum dot emission 利用单腔模式耦合单量子点发射的高效触发光子
SPIE ITCom Pub Date : 2003-12-08 DOI: 10.1117/12.512991
G. Solomon, M. Pelton, C. Santori, D. Fattal, J. Vučković, E. Waks, K. Inoue, Y. Yamamoto
{"title":"High-efficiency triggered photons using single-cavity mode coupling of single quantum dot emission","authors":"G. Solomon, M. Pelton, C. Santori, D. Fattal, J. Vučković, E. Waks, K. Inoue, Y. Yamamoto","doi":"10.1117/12.512991","DOIUrl":"https://doi.org/10.1117/12.512991","url":null,"abstract":"A high efficiency, triggered single photon source with applications to quantum communications is discussed. The sources is formed from an InAs-based quantum dot located in the center of a micropost cavity formed from GaAs, with top and bottom GaAs/AlAs distributive Bragg reflector pairs, and lateral processing. When pumped above band into the semiconductor host, correlation measurements show a reduction in the two-photon probability to 0.14, compared to unity for a Poisson source. The external efficiency of this structure is 0.24.","PeriodicalId":282161,"journal":{"name":"SPIE ITCom","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133226009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of free carriers and excitons on the gain and temperature characteristics of InAs/InGaAs quantum dot lasers 自由载流子和激子对InAs/InGaAs量子点激光器增益和温度特性的影响
SPIE ITCom Pub Date : 2003-12-08 DOI: 10.1117/12.513218
A. Dikshit, J. Pikal
{"title":"Effect of free carriers and excitons on the gain and temperature characteristics of InAs/InGaAs quantum dot lasers","authors":"A. Dikshit, J. Pikal","doi":"10.1117/12.513218","DOIUrl":"https://doi.org/10.1117/12.513218","url":null,"abstract":"In this work we study the role of free carriers and excitons on the characteristics of 1.3 μm InAs/InGaAs quantum dot lasers. The study is carried out theoretically by building a mathematical model to calculate the threshold current in the laser and the charateristic temperature, T0. In order to determine the role of free carrier and excitons on the laser characteristics the model allows for different carrier distribution assumptions to be used, and we look at three cases; all free carriers, all excitons, and both free carriers and excitons in the dots. Our model results show that if we allow either free carriers or excitons to exist but not both, the calculated threshold current and T0 do not match with the experimental values. Thus we conclude that both free and bound carriers must exist and develop a method for modeling this case. We use a modified form of the Saha equation to calculate the ratio of free carriers to excitons and modify the material gain to account for this ratio. This model results in a threshold current density of approximately 39 A/cm2 and a T0 of 83 K, both of which are in excellent agreement with experimental results.","PeriodicalId":282161,"journal":{"name":"SPIE ITCom","volume":"19 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131352179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Further development of high-power pump laser diodes 大功率泵浦激光二极管的进一步发展
SPIE ITCom Pub Date : 2003-12-08 DOI: 10.1117/12.513292
B. Schmidt, N. Lichtenstein, B. Sverdlov, N. Matuschek, S. Mohrdiek, T. Pliška, Juergen Mueller, S. Pawlik, S. Arlt, Hans-Ulrich Pfeiffer, A. Fily, C. Harder
{"title":"Further development of high-power pump laser diodes","authors":"B. Schmidt, N. Lichtenstein, B. Sverdlov, N. Matuschek, S. Mohrdiek, T. Pliška, Juergen Mueller, S. Pawlik, S. Arlt, Hans-Ulrich Pfeiffer, A. Fily, C. Harder","doi":"10.1117/12.513292","DOIUrl":"https://doi.org/10.1117/12.513292","url":null,"abstract":"AlGaAs/InGaAs based high power pump laser diodes with wavelength of around 980 nm are key products within erbium doped fiber amplifiers (EDFA) for today's long haul and metro-communication networks, whereas InGaAsP/InP based laser diodes with 14xx nm emission wavelength are relevant for advanced, but not yet widely-used Raman amplifiers. Due to the changing industrial environment cost reduction becomes a crucial factor in the development of new, pump modules. Therefore, pump laser chips were aggressively optimized in terms of power conversion and thermal stability, which allows operation without active cooling at temperatures exceeding 70°C. In addition our submarine-reliable single mode technology was extended to high power multi-mode laser diodes. These light sources can be used in the field of optical amplifiers as well as for medical, printing and industrial applications. Improvements of pump laser diodes in terms of power conversion efficiency, fiber Bragg grating (FBG) locking performance of single mode devices, noise reduction and reliability will be presented.","PeriodicalId":282161,"journal":{"name":"SPIE ITCom","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114512311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
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