Characterization of integrated Bragg gratings on silicon-on-insulator rib waveguides

SPIE ITCom Pub Date : 2003-12-08 DOI:10.1117/12.511138
S. Chan, V. Passaro, S. Lim, C. Png, W. Headley, G. Masanovic, G. Reed, R. M. Atta, G. Ensell, A. Evans
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引用次数: 6

Abstract

Waveguide based Bragg grating devices have the potential of integration with passive or active optical components. A narrow bandwidth Bragg reflection filter or Fabry-Perot resonant structures can be realised using the approach of periodic refractive index modulation in waveguide gratings to form reflective structures. Most authors have considered 1st order Bragg gratings with periods of the order of 228nm operating at 1550nm but at the expense of complexity and high cost of fabrication. This paper describes the design of Silicon-On-Insulator (SOI) rib waveguides operating in the single mode regime that exhibit low polarisation dependence. A rigorous leaky mode propagation method (LMP) has been used to investigate the influence of etch depth in 3rd order Bragg gratings on the reflectance and bandwidth in the waveguides.
绝缘体上硅肋波导上集成布拉格光栅的特性研究
基于波导的布拉格光栅器件具有与无源或有源光学元件集成的潜力。窄带Bragg反射滤波器或Fabry-Perot谐振结构可以通过在波导光栅中进行周期性折射率调制来形成反射结构。大多数作者都考虑过周期为228nm的一阶布拉格光栅在1550nm工作,但代价是复杂性和高制造成本。本文介绍了一种低极化依赖的单模绝缘体上硅(SOI)肋波导的设计。采用严格的漏模传播方法(LMP)研究了三阶布拉格光栅中蚀刻深度对波导反射率和带宽的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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