SPIE ITCom最新文献

Nonlinear behavior of traveling-wave electroabsorption modulators 行波电吸收调制器的非线性特性

SPIE ITCom Pub Date : 2003-12-10 DOI: 10.1117/12.510782

J. Shim, B. Liu, Y. Chiu, J. Piprek, J. Bowers

引用次数: 0

Resonant-cavity-enhanced silicon photodetector integrated to a fiber optic coupler 集成在光纤耦合器上的谐振腔增强硅光电探测器

SPIE ITCom Pub Date : 2003-12-10 DOI: 10.1117/12.510324

S. Isci, T. Bilici, A. Kurt, A. Serpengüzel

引用次数: 0

Third-order mode laser diode for twin photon generation 用于双光子产生的三阶模激光二极管

SPIE ITCom Pub Date : 2003-12-10 DOI: 10.1117/12.512938

A. de Rossi, V. Ortiz, M. Calligaro, B. Vinter, J. Nagle, S. Ducci, V. Berger

引用次数: 1

InP chip scale integration platform for high performance tunable lasers 用于高性能可调谐激光器的InP芯片级集成平台

SPIE ITCom Pub Date : 2003-12-10 DOI: 10.1117/12.512280

R. Simes, G. Fish, P. Abraham, Y. Akulova, C. Coldren, M. Focht, E. Hall, M. Larson, H. Marchand, P. Kozodoy, A. Dahl, P. Koh, T. Strand

{"title":"InP chip scale integration platform for high performance tunable lasers","authors":"R. Simes, G. Fish, P. Abraham, Y. Akulova, C. Coldren, M. Focht, E. Hall, M. Larson, H. Marchand, P. Kozodoy, A. Dahl, P. Koh, T. Strand","doi":"10.1117/12.512280","DOIUrl":"https://doi.org/10.1117/12.512280","url":null,"abstract":"Tunable semiconductor lasers have been listed in numerous critical technology lists for future optical communication systems. Lasers with full band tuning ranges (C or L) allow reduction of the inventory cost and simplify deployment and operation of existing systems in addition to enabling wavelength agile networking concepts in future systems. Furthermore, monolithic integration of full band tunable lasers with modulators to form complete transmitters offers the most potential for reducing system size, weight, power consumption, and cost. This paper summarizes design, fabrication technology, and performance characteristics of widely tunable CW sources and transmitters based on chip scale integration of a Sampled Grating Distributed Bragg Reflector (SG DBR) laser with a Semiconductor Optical Amplifier (SOA) and Electroabsorption (EA) or Mach Zehnder (MZ) modulator. Widely tunable CW sources based on SG-DBR lasers exhibit high fiber coupled output power (20 mW CW) and side mode suppression ratio (>40 dB), low relative intensity noise (below -140 dB/Hz) and line width (<5 MHz) across a 40 nm C-band tuning range. Characteristics of EA-modulated optical transmitters include fiber-coupled time-averaged powers in excess of 5 dBm, RF extinction ratios > 10 dB, and error-free transmission over 350 km of standard fiber at 2.5 Gb/s across a 40 nm tuning range. Monolithic integration of widely tunable lasers with MZ modulators allow for further extension of bit rate (10 Gb/s and beyond) and transmission distances through precise control of the transient chirp of the transmitter. Systematic investigations of accelerated aging confirm that reliability of these widely-tunable transmitters is sufficient for system deployment.","PeriodicalId":282161,"journal":{"name":"SPIE ITCom","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125036277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Optoelectronic devices for optical chaos communications 光混沌通信用光电器件

SPIE ITCom Pub Date : 2003-12-10 DOI: 10.1117/12.512210

C. Mirasso, Ingo Fischer, M. Peil, L. Larger

引用次数: 5

Broadband semiconductor optical amplifiers and tunable semiconductor lasers 宽带半导体光放大器和可调谐半导体激光器

SPIE ITCom Pub Date : 2003-12-10 DOI: 10.1117/12.512588

Ching-Fuh Lin, Yi-shin Su, Fei-Hung Chu, Chia-Wei Tsai

引用次数: 1

Electroabsorption modulators integrated with DFB lasers based on identical active double-stack MQW-layer structure with high-frequency performance 基于具有高频性能的相同有源双堆叠mqw层结构的DFB激光器集成电吸收调制器

SPIE ITCom Pub Date : 2003-12-10 DOI: 10.1117/12.512488

B. Stegmueller, C. Hanke

引用次数: 0

Recent progress in short-wavelength VCSEL-based optical interconnections 基于vcsel的短波光互连研究进展

SPIE ITCom Pub Date : 2003-12-10 DOI: 10.1117/12.513896

R. Michalzik, H. Roscher, M. Stach, D. Wiedenmann, Michael I. Miller, J. Broeng, A. Petersson, N. Mortensen, H. Simonsen, E. Kube

引用次数: 3

New materials and new structures for uncooled sources suitable for datacom and telecom applications 适用于数据通信和电信应用的非冷却源的新材料和新结构

SPIE ITCom Pub Date : 2003-12-10 DOI: 10.1117/12.512832

M. Meliga, C. Coriasso, R. Paoletti

{"title":"New materials and new structures for uncooled sources suitable for datacom and telecom applications","authors":"M. Meliga, C. Coriasso, R. Paoletti","doi":"10.1117/12.512832","DOIUrl":"https://doi.org/10.1117/12.512832","url":null,"abstract":"Optical communication systems operating at 10 Gbit/s such as 10 Gigabit Ethernet (GbE) are becoming more and more important, even in Local Area Networks (LAN) and Metropolitan Area Networks (MAN). This market requires optical transceivers of low cost, size and power consumption, driving a need for \"hot\" transmitter: uncooled DFB lasers directly modulated at 10 Gbit/s for short link (up to 10 km) and high operating temperature integrated (hybrid or monolithic) solution, like laser and electro absorption modulator at 10 Gbit/s, for longer distance (40 - 80 km). The paper describes the current status of these devices for different applications. We will report results on uncooled high speed 1300 nm DFB laser which is capable of being manufactured in high volume at the low cost demanded by the GbE market. Combining an optimized active region based on InGaAsP strained MQW (Multi Quantum Well) and a low parasitic lateral confinement region, we have fabricated 10 Gbit/s directly modulated uncooled DFB lasers which work up to 100°C (chip temperature), with eye diagram perfectly open (showing an extinction ratio > 5 dB @ 100°C), and with Bit Error Rate over 10 km without error floor up to 10-12. We will report the optimization and the results of an electro-abosorption modulator (EAM) based on quantum confined Stark effect in strained multiple quantum wells (MQWs), suitable for 40 - 80 km propagation of 10Gb/s optical signals on standard single-mode fiber at 1550 nm. The MQW structure has been designed and fabricated to obtain high extinction ratio, low insertion loss and negative chirp at 1550 nm, 60°C. Devices demonstrated a contrast ratio of above 10 dB, insertion loss of 5 dB and a negative chirp at 10 Gb/s, 60°C with a voltage swing of 2 V.","PeriodicalId":282161,"journal":{"name":"SPIE ITCom","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129539892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

InP-based waveguide photodetector with integrated photon multiplication 集成光子倍增的基于inp的波导光电探测器

SPIE ITCom Pub Date : 2003-12-08 DOI: 10.1117/12.510622

D. Pasquariello, J. Piprek, D. Lasaosa, J. Bowers

引用次数: 3