集成光子倍增的基于inp的波导光电探测器

SPIE ITCom Pub Date : 2003-12-08 DOI:10.1117/12.510622
D. Pasquariello, J. Piprek, D. Lasaosa, J. Bowers
{"title":"集成光子倍增的基于inp的波导光电探测器","authors":"D. Pasquariello, J. Piprek, D. Lasaosa, J. Bowers","doi":"10.1117/12.510622","DOIUrl":null,"url":null,"abstract":"We report on novel InP based traveling wave amplification photodetectors exhibiting an external quantum efficiency of more than 100%. Our detectors vertically combine a bulk InGaAs photodetector ridge region with laterally confined InGaAsP quantum wells for amplification. In addition to ultra high responsivities, such detectors have the potential to also achieve high saturation power and high speed. The device physics is discussed using advanced numerical simulation.","PeriodicalId":282161,"journal":{"name":"SPIE ITCom","volume":"511 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"InP-based waveguide photodetector with integrated photon multiplication\",\"authors\":\"D. Pasquariello, J. Piprek, D. Lasaosa, J. Bowers\",\"doi\":\"10.1117/12.510622\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on novel InP based traveling wave amplification photodetectors exhibiting an external quantum efficiency of more than 100%. Our detectors vertically combine a bulk InGaAs photodetector ridge region with laterally confined InGaAsP quantum wells for amplification. In addition to ultra high responsivities, such detectors have the potential to also achieve high saturation power and high speed. The device physics is discussed using advanced numerical simulation.\",\"PeriodicalId\":282161,\"journal\":{\"name\":\"SPIE ITCom\",\"volume\":\"511 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"SPIE ITCom\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.510622\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"SPIE ITCom","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.510622","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

我们报道了一种新型的基于InP的行波放大光电探测器,其外量子效率超过100%。我们的探测器垂直结合了大块InGaAs光电探测器脊区和横向受限的InGaAsP量子阱,用于放大。除了超高的响应能力外,这种探测器还具有实现高饱和功率和高速的潜力。用先进的数值模拟方法讨论了器件的物理特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
InP-based waveguide photodetector with integrated photon multiplication
We report on novel InP based traveling wave amplification photodetectors exhibiting an external quantum efficiency of more than 100%. Our detectors vertically combine a bulk InGaAs photodetector ridge region with laterally confined InGaAsP quantum wells for amplification. In addition to ultra high responsivities, such detectors have the potential to also achieve high saturation power and high speed. The device physics is discussed using advanced numerical simulation.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信