{"title":"集成光子倍增的基于inp的波导光电探测器","authors":"D. Pasquariello, J. Piprek, D. Lasaosa, J. Bowers","doi":"10.1117/12.510622","DOIUrl":null,"url":null,"abstract":"We report on novel InP based traveling wave amplification photodetectors exhibiting an external quantum efficiency of more than 100%. Our detectors vertically combine a bulk InGaAs photodetector ridge region with laterally confined InGaAsP quantum wells for amplification. In addition to ultra high responsivities, such detectors have the potential to also achieve high saturation power and high speed. The device physics is discussed using advanced numerical simulation.","PeriodicalId":282161,"journal":{"name":"SPIE ITCom","volume":"511 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"InP-based waveguide photodetector with integrated photon multiplication\",\"authors\":\"D. Pasquariello, J. Piprek, D. Lasaosa, J. Bowers\",\"doi\":\"10.1117/12.510622\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on novel InP based traveling wave amplification photodetectors exhibiting an external quantum efficiency of more than 100%. Our detectors vertically combine a bulk InGaAs photodetector ridge region with laterally confined InGaAsP quantum wells for amplification. In addition to ultra high responsivities, such detectors have the potential to also achieve high saturation power and high speed. The device physics is discussed using advanced numerical simulation.\",\"PeriodicalId\":282161,\"journal\":{\"name\":\"SPIE ITCom\",\"volume\":\"511 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"SPIE ITCom\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.510622\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"SPIE ITCom","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.510622","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
InP-based waveguide photodetector with integrated photon multiplication
We report on novel InP based traveling wave amplification photodetectors exhibiting an external quantum efficiency of more than 100%. Our detectors vertically combine a bulk InGaAs photodetector ridge region with laterally confined InGaAsP quantum wells for amplification. In addition to ultra high responsivities, such detectors have the potential to also achieve high saturation power and high speed. The device physics is discussed using advanced numerical simulation.