基于具有高频性能的相同有源双堆叠mqw层结构的DFB激光器集成电吸收调制器

SPIE ITCom Pub Date : 2003-12-10 DOI:10.1117/12.512488
B. Stegmueller, C. Hanke
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引用次数: 0

摘要

电光调制器是光纤传输速率超过10Gbit/s的关键部件。采用一种基于双叠多量子阱(MQW)结构的新方法,演示了应用量子受限斯塔克效应的电吸收(EA)调制器与分布式反馈(DFB)激光二极管的单片集成。本文将描述和讨论这种采用相同MQW层结构的新方法,用于两个器件,DFB激光二极管和EA调制器。最近,测量到的最大3db截止频率为25 GHz。在1.3µm和1.55µm工作的器件中获得的进一步实验结果显示,这些器件具有高速数据速率传输的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electroabsorption modulators integrated with DFB lasers based on identical active double-stack MQW-layer structure with high-frequency performance
Electro optic modulators are key components for fiber optic transmission at data rates exceeding 10Gbit/s. The monolithic integration of an electroabsorption (EA) modulator applying the quantum confined stark effect with a distributed feedback (DFB) laser diode was demonstrated using a novel approach based on a double-stack multiple quantum well (MQW) structure. This novel approach using an identical MQW layer structure for both devices, the DFB laser diode and the EA modulator, will be described and discussed. Recently, a maximum 3dB-cutoff frequency of 25 GHz was measured. Further experimental results obtained from devices operating at 1.3 µm and 1.55 µm, respectively, exhibit the potential of these devices for high-speed data rate transmission.
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