利用单腔模式耦合单量子点发射的高效触发光子

SPIE ITCom Pub Date : 2003-12-08 DOI:10.1117/12.512991
G. Solomon, M. Pelton, C. Santori, D. Fattal, J. Vučković, E. Waks, K. Inoue, Y. Yamamoto
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引用次数: 0

摘要

讨论了一种高效、触发的单光子源及其在量子通信中的应用。光源由位于GaAs形成的微柱腔中心的基于inas的量子点形成,具有顶部和底部GaAs/AlAs分布布拉格反射器对,并进行横向处理。当泵浦到半导体主机以上的波段时,相关测量显示,与泊松源的单位相比,双光子概率降低到0.14。该结构的外部效率为0.24。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High-efficiency triggered photons using single-cavity mode coupling of single quantum dot emission
A high efficiency, triggered single photon source with applications to quantum communications is discussed. The sources is formed from an InAs-based quantum dot located in the center of a micropost cavity formed from GaAs, with top and bottom GaAs/AlAs distributive Bragg reflector pairs, and lateral processing. When pumped above band into the semiconductor host, correlation measurements show a reduction in the two-photon probability to 0.14, compared to unity for a Poisson source. The external efficiency of this structure is 0.24.
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