具有隧道结的晶圆键合vcsel

SPIE ITCom Pub Date : 2003-12-08 DOI:10.1117/12.511773

M. Mehta, V. Jayaraman, A. Jackson, Shaomin Wu, Y. Okuno, J. Piprek, J. Bowers

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引用次数: 1

摘要

介绍了一种结合晶圆键合和隧道结的方案，以提高长波垂直腔面发射激光器(VCSELs)的性能。通过对pl模偏置、镜面反射率和孔径定义的精心设计，我们实现了134°C的激光，输出功率超过2 mW, 80°C的单模输出功率超过1 mW，差动效率为46%。我们实现了波长高达1336 nm的激光，并展示了一种多功能的设计，可以应用于任何长波长的VCSEL。

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Wafer-bonded VCSELs with tunnel junctions

We introduce a scheme incorporating wafer bonding and tunnel junctions to improve the performance long-wavelength Vertical Cavity Surface Emitting Lasers (VCSELs). Through careful design of PL-mode offset, mirror reflectivity, and aperture definition, we achieve lasing to 134°C, output power above 2 mW, single-mode output power at 80°C above 1 mW, and differential efficiencies of 46%. We achieve lasing at wavelengths as high as 1336 nm and show a versatile design that can be applied to any VCSEL functioning at long wavelengths.

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