2018 34th Thermal Measurement, Modeling & Management Symposium (SEMI-THERM)最新文献_第4页

Performance and reliability of a 5G smartphone RF-antenna system: Influence of temperature field 5G智能手机射频天线系统的性能和可靠性:温度场的影响

2018 34th Thermal Measurement, Modeling & Management Symposium (SEMI-THERM) Pub Date : 2018-03-01 DOI: 10.1109/SEMI-THERM.2018.8357357

D. Rolando, Mehdi Abarham, G. Shankaran, Viral Gandhi

{"title":"Performance and reliability of a 5G smartphone RF-antenna system: Influence of temperature field","authors":"D. Rolando, Mehdi Abarham, G. Shankaran, Viral Gandhi","doi":"10.1109/SEMI-THERM.2018.8357357","DOIUrl":"https://doi.org/10.1109/SEMI-THERM.2018.8357357","url":null,"abstract":"The last decade has seen a rapid evolution of wireless systems and smart devices. The advent of fifth generation (5G) wireless standards in the near future will undoubtedly accelerate the pace of this advance. 5G wireless presents a new challenge in that its devices must be scalable to a mass commercial market at suitably low costs. Thus, a significant tradeoff must be made between performance and cost — more so than was necessary for many previous generations of mm-wave devices. Simulation will become increasingly more important in helping to balance this tradeoff in a multitude of mass-produced 5G devices. This paper presents a simulation workflow and case study that illustrates the importance of a comprehensive multi-physics approach to designing wireless systems, with a view towards expected developments in future 5G and mm-wave designs. The electrical performance of the antenna under “ideal” (i.e. room-temperature) conditions is determined first. The electromagnetic (EM) results are then incorporated in a thermal analysis to determine the spatial variation of steady-state temperature when the amplifier and antenna are in a constant “on” state. The thermal solution is then fed back to the EM simulation to re-compute the antenna's electrical performance under the influence of radio frequency (RF) heating. The key in this last step is to not only account for the temperature-dependent material properties of the 3D model via spatially-varying thermal feedback, but also to account for the temperature dependent properties of the components in the driving circuit schematic. This comprehensive multi-physics approach shows the true potential for performance degradation of the antenna transmitting system. In particular, the effect on the important antenna performance metrics of impedance match, radiative efficiency, and tuned resonant frequency are considered.","PeriodicalId":277758,"journal":{"name":"2018 34th Thermal Measurement, Modeling & Management Symposium (SEMI-THERM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116123453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Submicron local and time-dependent thermal resistance characterization of GaN HEMTs GaN hemt的亚微米局部和时间相关热阻特性

2018 34th Thermal Measurement, Modeling & Management Symposium (SEMI-THERM) Pub Date : 2018-03-01 DOI: 10.1109/SEMI-THERM.2018.8357369

D. Kendig, E. Yagyu, K. Yazawa, A. Shakouri

{"title":"Submicron local and time-dependent thermal resistance characterization of GaN HEMTs","authors":"D. Kendig, E. Yagyu, K. Yazawa, A. Shakouri","doi":"10.1109/SEMI-THERM.2018.8357369","DOIUrl":"https://doi.org/10.1109/SEMI-THERM.2018.8357369","url":null,"abstract":"This paper presents an optical thermal characterization of a microwave power device with submicron features using thermoreflectance imaging. Recent advanced gallium nitride (GaN) technology is the basis for a microwave power amplifier consisting of an array of high electron mobility transistors (HEMTs) for very high frequency operation. With a micron or narrower scale gate and surrounding submicron features, a significantly high density of heat is generated. It occurs especially in a 2D electron gas channel consisting of aluminum gallium nitride (AlGaN) layer beneath the gap between the gate and drain. Due to the relatively long span gate finger width (longitudinal length ∼100 μm) with very large aspect ratio, some non-uniformity in thermal resistance along the line may occur. The objective region comprises multiple materials with submicron features having different reflective properties as a function of illumination wavelength. A previously developed hyperspectral full-band wavelength thermoreflectance imaging technique enabled an accurate characterization of the time-dependent temperature distribution to a pulse input along the gate finger. The localized and time-dependent thermal resistance helped further characterization of the thermal impact by utilizing a Field Plate (FP) on top of the gate line, which is known to improve the quality of the waveform from GaN HEMT power amplifiers. It showed only a minor increase of the local thermal resistance at the drain side in a submicron gap with the FP device. However, the method of hybrid analytic modeling also showed the potential extension of transient thermal design and analysis of GaN HEMT devices.","PeriodicalId":277758,"journal":{"name":"2018 34th Thermal Measurement, Modeling & Management Symposium (SEMI-THERM)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127086306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Generative heatsink design for an automotive audio amplifier 汽车音频放大器的生成式散热器设计

2018 34th Thermal Measurement, Modeling & Management Symposium (SEMI-THERM) Pub Date : 2018-03-01 DOI: 10.1109/SEMI-THERM.2018.8357379

R. Bornoff, Brad Subat, John Wilson

引用次数: 4

Developing a ThetaJC standard for electronic packages 开发电子封装的ThetaJC标准

2018 34th Thermal Measurement, Modeling & Management Symposium (SEMI-THERM) Pub Date : 2018-03-01 DOI: 10.1109/SEMI-THERM.2018.8357370

J. Galloway, Eduardo de los Heros

引用次数: 5

Efficient power map modeling in integrated circuits and power devices 集成电路和功率器件中的高效功率图建模

2018 34th Thermal Measurement, Modeling & Management Symposium (SEMI-THERM) Pub Date : 2018-03-01 DOI: 10.1109/SEMI-THERM.2018.8357363

Swati Saxena, K. Jain

引用次数: 0

Thermal resistance of electrical insulation for bolted and clamped discrete power devices 用螺栓和夹紧的分立电源装置的电绝缘热阻

2018 34th Thermal Measurement, Modeling & Management Symposium (SEMI-THERM) Pub Date : 2018-03-01 DOI: 10.1109/SEMI-THERM.2018.8357371

Mikel Garcia-Poulin, M. Ahmadi, M. Bahrami, Eric Lau, Chris Botting

引用次数: 3