2022 International Electron Devices Meeting (IEDM)最新文献_第4页

Wafer-scale biologically sensitive carbon nanotube transistors: from fabrication to clinical applications 晶圆级生物敏感碳纳米管晶体管:从制造到临床应用

2022 International Electron Devices Meeting (IEDM) Pub Date : 2022-12-03 DOI: 10.1109/IEDM45625.2022.10019375

Mengmeng Xiao, Zhiyong Zhang

引用次数: 0

Low-voltage and high-speed switching of a magnetoelectric element for energy efficient compute 用于节能计算的磁电元件的低压高速开关

2022 International Electron Devices Meeting (IEDM) Pub Date : 2022-12-03 DOI: 10.1109/IEDM45625.2022.10019505

Punyashloka Debashis, J. Plombon, Chia-Ching Lin, Y. Liao, Hai Helen Li, Dmitri E. Nikonov, Dominique Adams, C. Rogan, Mahendra Dc, M. Radosavljevic, S. Clendenning, I. Young

引用次数: 3

Low-Thermal-Budget BEOL-Compatible Beyond-Silicon Transistor Technologies for Future Monolithic-3D Compute and Memory Applications 面向未来单片3d计算和存储应用的低热预算beol兼容超硅晶体管技术

2022 International Electron Devices Meeting (IEDM) Pub Date : 2022-12-03 DOI: 10.1109/IEDM45625.2022.10019511

A. Thean, Shih-Hao Tsai, Chun-Kuei Chen, M. Sivan, B. Tang, S. Hooda, Zihang Fang, Jieming Pan, J. Leong, H. Veluri, E. Zamburg

引用次数: 0

3D Monolithic Integration of ScAlN-based GHz MEMS Acoustic Filters on 200mm RFSOI Wafer 基于scaln的GHz MEMS声滤波器在200mm RFSOI晶圆上的3D单片集成

2022 International Electron Devices Meeting (IEDM) Pub Date : 2022-12-03 DOI: 10.1109/IEDM45625.2022.10019557

Y. Zhang, X. Wang, C. Liu, E. Woo, W. Yang, Q. Zhang, H. Lin, D. Yan, R. Kumarasamy, B. Chen, N. Wang, Y. Zhu

引用次数: 5

3-Tier BSI CIS with 3D Sequential & Hybrid Bonding Enabling a1.4um pitch,106dB HDR Flicker Free Pixel 3层BSI CIS具有3D顺序和混合键接，支持1.4um间距，106dB HDR无闪烁像素

2022 International Electron Devices Meeting (IEDM) Pub Date : 2022-12-03 DOI: 10.1109/IEDM45625.2022.10019432

F. Guyader, P. Batude, P. Malinge, E. Vire, J. Lacord, J. Jourdon, J. Poulet, L. Gay, F. Ponthenier, S. Joblot, A. Farcy, L. Brunet, A. Albouy, C. Theodorou, M. Ribotta, D. Bosch, E. Ollier, D. Muller, M. Neyens, D. Jeanjean, T. Ferrotti, E. Mortini, J.G. Mattei, A. Inard, R. Fillon, F. Lalanne, F. Roy, E. Josse

引用次数: 2

Dynamics of PSG-Based Nanosecond Protonic Programmable Resistors for Analog Deep Learning 基于psg的纳秒质子可编程电阻器的模拟深度学习动力学

2022 International Electron Devices Meeting (IEDM) Pub Date : 2022-12-03 DOI: 10.1109/IEDM45625.2022.10019365

M. Onen, J. Li, B. Yildiz, J. D. del Alamo

引用次数: 26

The Nanopore-FET as a High-Throughput Barcode Molecule Reader for Single-Molecule Omics and Read-out of DNA Digital Data Storage 纳米孔场效应晶体管作为单分子组学和DNA数字数据存储读出的高通量条形码分子阅读器

2022 International Electron Devices Meeting (IEDM) Pub Date : 2022-12-03 DOI: 10.1109/IEDM45625.2022.10019451

K. Martens, David Barge, Lijun Liu, S. Santermans, Colin Stoquart, Jacobus Delport, K. Willems, Dino Ruić, S. Marion, J. Gevers, B. D. Bois, A. Andrei, L. Lagae, Mark Veugelers, A. Verhulst, S. Severi, P. Dorpe

{"title":"The Nanopore-FET as a High-Throughput Barcode Molecule Reader for Single-Molecule Omics and Read-out of DNA Digital Data Storage","authors":"K. Martens, David Barge, Lijun Liu, S. Santermans, Colin Stoquart, Jacobus Delport, K. Willems, Dino Ruić, S. Marion, J. Gevers, B. D. Bois, A. Andrei, L. Lagae, Mark Veugelers, A. Verhulst, S. Severi, P. Dorpe","doi":"10.1109/IEDM45625.2022.10019451","DOIUrl":"https://doi.org/10.1109/IEDM45625.2022.10019451","url":null,"abstract":"Nanopore technology has augmented DNA sequencing, and nascent nanopore-based technology breakthroughs may lead to major steps forward in large-scale molecular analysis (omics) and DNA digital data storage. A major weakness of current nanopore technologies is the requisite recording of pico-to nanoampere ionic currents. Such low currents limit recording bandwidth in large integrated arrays and impose a limit on how quickly a detectable molecule can cross, or translocate the pore. The Nanopore Field Effect Transistor (NPFET) is a nanopore surrounded by a nanoscale field-effect transistor. The field-effect transistor senses single molecules translocating through the pore relying on much larger microampere currents. The NPFET potentially offers higher bandwidths in large integrated arrays and the breaking of the nanopore translocation speed limit. Moreover, because individual electrolyte contacts are not required for NPFETs they are more easily integrated into large arrays than nanopores. NPFETs may lead to major strides in high throughput reading of molecularly encoded information. We will introduce and elaborate on nanopore FET technology research for omics and DNA data storage and we will propose a scaling roadmap that aims to incrementally boost NPFET molecular read throughput.","PeriodicalId":275494,"journal":{"name":"2022 International Electron Devices Meeting (IEDM)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121834830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

First Demonstration of Monolithic 3D Self-aligned GeSi Channel and Common Gate Complementary FETs by CVD Epitaxy Using Multiple P/N Junction Isolation 采用多P/N结隔离的CVD外延技术首次展示单片三维自对准GeSi通道和共栅互补场效应管

2022 International Electron Devices Meeting (IEDM) Pub Date : 2022-12-03 DOI: 10.1109/IEDM45625.2022.10019532

Chien-Te Tu, Yi-Chun Liu, B. Huang, Yu-Rui Chen, Wan-Hsuan Hsieh, Chung-En Tsai, Shee-Jier Chueh, Chun-Yi Cheng, Yichen Ma, C. Liu

{"title":"First Demonstration of Monolithic 3D Self-aligned GeSi Channel and Common Gate Complementary FETs by CVD Epitaxy Using Multiple P/N Junction Isolation","authors":"Chien-Te Tu, Yi-Chun Liu, B. Huang, Yu-Rui Chen, Wan-Hsuan Hsieh, Chung-En Tsai, Shee-Jier Chueh, Chun-Yi Cheng, Yichen Ma, C. Liu","doi":"10.1109/IEDM45625.2022.10019532","DOIUrl":"https://doi.org/10.1109/IEDM45625.2022.10019532","url":null,"abstract":"Monolithic 3D self-aligned vertically stacked Ge0.75 Si0.25 nanosheet complementary FETs with multiple P/N junction isolation by in-situ doped CVD epitaxy are experimentally demonstrated. The triple P/N junctions using Ge:B/Ge:P multilayers suppress the leakage current without extra dielectric layers. Both the top pFETs and bottom nFETs have the same uniform GeSi nanosheets thanks to the co-optimization of CVD epitaxy and highly selective HNO3 wet etching (selectivity~140). Self-aligned GeSi channels and common gate architecture are fabricated as a CMOS inverter with good voltage transfer characteristics. The post-metallization annealing with the low thermal budget of 400°C improves the inverter characteristics such as switching threshold voltage and voltage gain. The self-aligned 3D stacked GeSi nanosheet pFETs on GeSi nanosheet nFETs without wafer bonding, dielectric isolation, and selective epi regrowth can simplify the process for 3D transistor stacking.","PeriodicalId":275494,"journal":{"name":"2022 International Electron Devices Meeting (IEDM)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123795992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Single-molecule field-effect transistors: carbon nanotube devices for temporally encoded biosensing 单分子场效应晶体管:用于时间编码生物传感的碳纳米管器件

2022 International Electron Devices Meeting (IEDM) Pub Date : 2022-12-03 DOI: 10.1109/IEDM45625.2022.10019504

D. Lynall, K. Shepard

引用次数: 0

Monolithic Integration of Top Si3N4 - Waveguided Germanium Quantum-Dots Microdisk Light Emitters and PIN Photodetectors for On-chip Ultrafine Sensing 用于片上超细传感的Top Si3N4 -波导锗量子点微盘光源和PIN光电探测器的单片集成

2022 International Electron Devices Meeting (IEDM) Pub Date : 2022-12-03 DOI: 10.1109/IEDM45625.2022.10019407

Chih-Hsuan Lin, P. Hong, Bing-Ju Lee, Horng-Chih Lin, T. George, Pei-Wen Li

{"title":"Monolithic Integration of Top Si3N4 - Waveguided Germanium Quantum-Dots Microdisk Light Emitters and PIN Photodetectors for On-chip Ultrafine Sensing","authors":"Chih-Hsuan Lin, P. Hong, Bing-Ju Lee, Horng-Chih Lin, T. George, Pei-Wen Li","doi":"10.1109/IEDM45625.2022.10019407","DOIUrl":"https://doi.org/10.1109/IEDM45625.2022.10019407","url":null,"abstract":"Using a coordinated combination of lithographic patterning and self-assembled growth, Ge spherical quantum-dots (QDs) were controllably generated within host $Si_{3}N_{4}$ layers as active medium for Si photonics. A significant fabrication advantage of our approach is the high-temperature thermal stability of Ge QDs that are formed by thermal oxidation of poly-SiGe at $900^{o}C$, offering process flexibility in the waveguide-material choices and device designs. Our Ge QDs enable monolithic integration of $mu$ disk light-emitters and PIN photodetectors (PDs) with top $Si_{3}N_{4}$/SiO2/Ge waveguide-coupled structures using standard Si processing. Over 95% coupling efficiency from SiN WGs to Ge QD PDs is achievable. Ultralow dark current of $0.1 pA/mu m$, high responsivity of 3,500 A/W at 850 nm and 10A/W at 1550 nm, 3dB frequency $gt10$ GHz for Ge-QD PDs and low threshold power of $0.6 kW/cm^{2}$ for optically-pumped Ge QD/SiN $mu$ - disks lasing evidence the high degree of crystallinity of our Ge QDs as an effective building block for 3D SiN PICs.","PeriodicalId":275494,"journal":{"name":"2022 International Electron Devices Meeting (IEDM)","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131229669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2