{"title":"Dynamics of PSG-Based Nanosecond Protonic Programmable Resistors for Analog Deep Learning","authors":"M. Onen, J. Li, B. Yildiz, J. D. del Alamo","doi":"10.1109/IEDM45625.2022.10019365","DOIUrl":null,"url":null,"abstract":"We study the dynamics of a new class of three-terminal programmable resistors based on proton intercalation into a metal oxide channel using PSG as electrolyte for energy-efficient analog deep-learning hardware accelerators. These CMOS- and BEOL-compatible nanoscale devices exhibit excellent characteristics in terms of high operation speed (5 ns/pulse), high energy efficiency (~fJ/pulse), many (1000) nonvolatile conductance states across a large dynamic range (10×), linear and symmetric modulation, and high endurance [1]. This work presents the first real-time study of the dynamics of these devices evidencing impulse-like non-volatile conductance modulation with nanosecond-range pulses without any visible equilibration dynamics. Our study also reveals that the bottleneck to channel conductance modulation is proton transfer across the PSG/WO3 interface and not proton transport across the PSG.","PeriodicalId":275494,"journal":{"name":"2022 International Electron Devices Meeting (IEDM)","volume":"193 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"26","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM45625.2022.10019365","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 26
Abstract
We study the dynamics of a new class of three-terminal programmable resistors based on proton intercalation into a metal oxide channel using PSG as electrolyte for energy-efficient analog deep-learning hardware accelerators. These CMOS- and BEOL-compatible nanoscale devices exhibit excellent characteristics in terms of high operation speed (5 ns/pulse), high energy efficiency (~fJ/pulse), many (1000) nonvolatile conductance states across a large dynamic range (10×), linear and symmetric modulation, and high endurance [1]. This work presents the first real-time study of the dynamics of these devices evidencing impulse-like non-volatile conductance modulation with nanosecond-range pulses without any visible equilibration dynamics. Our study also reveals that the bottleneck to channel conductance modulation is proton transfer across the PSG/WO3 interface and not proton transport across the PSG.