2022 International Electron Devices Meeting (IEDM)最新文献_第3页

Low thermal budget PBTI and NBTI reliability solutions for multi-Vth CMOS RMG stacks based on atomic oxygen and hydrogen treatments 基于原子氧和氢原子处理的多vth CMOS RMG堆叠低热预算PBTI和NBTI可靠性解决方案

2022 International Electron Devices Meeting (IEDM) Pub Date : 2022-12-03 DOI: 10.1109/IEDM45625.2022.10019385

J. Franco, H. Arimura, J. de Marneffe, D. Claes, S. Brus, A. Vandooren, E. Litta, N. Horiguchi, K. Croes, B. Kaczer

{"title":"Low thermal budget PBTI and NBTI reliability solutions for multi-Vth CMOS RMG stacks based on atomic oxygen and hydrogen treatments","authors":"J. Franco, H. Arimura, J. de Marneffe, D. Claes, S. Brus, A. Vandooren, E. Litta, N. Horiguchi, K. Croes, B. Kaczer","doi":"10.1109/IEDM45625.2022.10019385","DOIUrl":"https://doi.org/10.1109/IEDM45625.2022.10019385","url":null,"abstract":"We demonstrate a low temperature $(mathrm{T}leqmathbf{2 8 0}0^{circ}mathrm{C})$ atomic oxygen (O*) treatment to suppress the electron trap density in $mathbf{H f O}_{2}$ and improve PBTI in RMG stacks, matching the reliability of a standard high thermal budget flow. This novel high-k treatment is combined with our previously demonstrated low-T atomic hydrogen (H*) treatment of the chemOx IL for NBTI improvement, thus providing a complete BTI solution compatible with Sequential 3D integration and tightly spaced nanosheet stacks (e.g., CFET). For multi- Vth offerings, we deploy the low-T treatments with different Work Function Metal (WFM) stacks and observe a systematic correlation between effective WVF (eWF) and reliability, with low eWF beneficial for PBTI and detrimental for NBTI. Through Comphy simulations we show that these distinct correlations, together with the gate leakage increase at low eWF, are readily explained by assuming positive charge formation at the channel interface as the mechanism for eWF lowering in TiN/TiAl stacks with scaled TiN bottom layer. Finally, we discuss the EOT scalability of the low-T gate stacks with H* and O* treatments.","PeriodicalId":275494,"journal":{"name":"2022 International Electron Devices Meeting (IEDM)","volume":"189 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133887870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Current Status and Future Prospects of GaN-on-GaN Vertical Power Devices GaN-on-GaN垂直功率器件的现状与展望

2022 International Electron Devices Meeting (IEDM) Pub Date : 2022-12-03 DOI: 10.1109/IEDM45625.2022.10019514

J. Suda

引用次数: 0

In-situ atomic-level observation of reversible first-order transition in Hf0.5 Zr0.5 O₂ ferroelectric film Hf0.5 Zr0.5 O₂铁电薄膜可逆一阶跃迁的原位原子水平观察

2022 International Electron Devices Meeting (IEDM) Pub Date : 2022-12-03 DOI: 10.1109/IEDM45625.2022.10019431

Yonghui Zheng, Tianjiao Xin, Jing Yang, Yunzhe Zheng, Zhaomeng Gao, Yiwei Wang, Yilin Xu, Yan Cheng, Kai Du, Diqing Su, R. Shao, Bingxing Zhou, Zhen Yuan, Qilan Zhong, Cheng Liu, R. Huang, Xiaodong Tang, Chungang Duan, Sannian Song, Zhitang Song, Hangbing Lyu

{"title":"In-situ atomic-level observation of reversible first-order transition in Hf0.5 Zr0.5 O₂ ferroelectric film","authors":"Yonghui Zheng, Tianjiao Xin, Jing Yang, Yunzhe Zheng, Zhaomeng Gao, Yiwei Wang, Yilin Xu, Yan Cheng, Kai Du, Diqing Su, R. Shao, Bingxing Zhou, Zhen Yuan, Qilan Zhong, Cheng Liu, R. Huang, Xiaodong Tang, Chungang Duan, Sannian Song, Zhitang Song, Hangbing Lyu","doi":"10.1109/IEDM45625.2022.10019431","DOIUrl":"https://doi.org/10.1109/IEDM45625.2022.10019431","url":null,"abstract":"In this work, we revealed the dynamic process of atomic structure transitions of ferroelectric (FE) Hf0.5 Zr0.5 O2 (HZO) film across Curie temperature ${mathrm{T}}_{mathrm{c}}$ in spherical aberration corrected transmission electron microscope (Cs-TEM) with in-situ controlled heating and cooling. We have the following new observations: (1) A first-order transition between polar orthorhombic (o−) and nonpolar tetragonal (t−) phases occurs as heating up to ${mathrm{T}}_{mathrm{c}}$, while the reverse process is triggered by cooling with obvious thermal hysteresis $(Delta mathrm{T}approx 298^{o}mathrm{C})$; (2) Monoclinic (m−) phase contributes to the stability of o-structure by introducing local compressive stress; (3) The cooling t-to-o transition is identified as martensitic-like transformation, therefore increasing the phase change driving force would be helpful to FE enhancement. This work provides solid evidences on structure transitions near ${mathrm{T}}_{mathrm{c}}$ of HZO film at atomic-scale, laying foundation for understanding the physical nature of ferroelectricity in hafnium oxide materials.","PeriodicalId":275494,"journal":{"name":"2022 International Electron Devices Meeting (IEDM)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132898595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

3-Layer Stacked Voltage-Domain Global Shutter CMOS Image Sensor with 1.8μm-Pixel-Pitch 1.8μm像素距的3层堆叠电压域全局快门CMOS图像传感器

2022 International Electron Devices Meeting (IEDM) Pub Date : 2022-12-03 DOI: 10.1109/IEDM45625.2022.10019515

Seung-Sik Kim, Gwi-Deok Lee, Sang-su Park, Heesung Shim, Dae-Hoon Kim, M. Choi, Sangyoon Kim, Gyu-Tae Park, Seunghyun Oh, Joosung Moon, Sungbong Park, S.O.L.A. Yoon, Jihye Jeong, Sejin Park, Sang-Gwon Lee, Haejung Lee, Wonoh Ryu, Taehyoung Kim, Doowon Kwon, Hyuk Soon Choi, Hongki Kim, Jonghyun Go, Jingyun Kim, Seung-hyun Lim, Hoonjoo Na, Jae-kyu Lee, Changrok Moon, J. Song

引用次数: 0

Optogenetic Neural Probes: Fiberless, High-Density, Artifact-Free Neuromodulation : (Invited) 光遗传神经探针:无纤维、高密度、无伪影神经调节:(特邀)

2022 International Electron Devices Meeting (IEDM) Pub Date : 2022-12-03 DOI: 10.1109/IEDM45625.2022.10019379

Eunah Ko, Kanghwan Kim, M. Vöröslakos, Sungjin Oh, G. Buzsáki, K. Wise, E. Yoon

引用次数: 0

Mitigating Impact of Defects On Performance with Classical Device Engineering of Scaled Si/SiGe Qubit Arrays 用经典器件工程方法减轻Si/SiGe量子比特阵列缺陷对性能的影响

2022 International Electron Devices Meeting (IEDM) Pub Date : 2022-12-03 DOI: 10.1109/IEDM45625.2022.10019382

R. Kotlyar, S. Premaratne, G. Zheng, J. Corrigan, R. Pillarisetty, S. Neyens, O. Zietz, T. Watson, F. Luthi, F. Borjans, L. Lampert, E. Henry, H. George, S. Bojarski, J. Roberts, A. Matsuura, J. Clarke

引用次数: 2

Terahertz In0.8 Ga0.2 As quantum-well HEMTs toward 6G applications 面向6G应用的量子阱hemt

2022 International Electron Devices Meeting (IEDM) Pub Date : 2022-12-03 DOI: 10.1109/IEDM45625.2022.10019567

W. Park, Hyeon-Bhin Jo, Hyo-Jin Kim, Su-Min Choi, J. Yoo, Ji-Hun Kim, Hyeon-Seok Jeong, Sethu George, Ji-Min Beak, I. Lee, Tae-Woo Kim, Sang-Kuk Kim, J. Yun, T.E. Kim, T. Tsutsumi, H. Sugiyama, H. Matsuzaki, Jaehak Lee, Daehyun Kim

{"title":"Terahertz In0.8 Ga0.2 As quantum-well HEMTs toward 6G applications","authors":"W. Park, Hyeon-Bhin Jo, Hyo-Jin Kim, Su-Min Choi, J. Yoo, Ji-Hun Kim, Hyeon-Seok Jeong, Sethu George, Ji-Min Beak, I. Lee, Tae-Woo Kim, Sang-Kuk Kim, J. Yun, T.E. Kim, T. Tsutsumi, H. Sugiyama, H. Matsuzaki, Jaehak Lee, Daehyun Kim","doi":"10.1109/IEDM45625.2022.10019567","DOIUrl":"https://doi.org/10.1109/IEDM45625.2022.10019567","url":null,"abstract":"We present the systematic analysis of L<inf>g</inf> scaling behavior and the impact of the side-recess spacing $(L_{side})$ on DC and high-frequency characteristics of In<inf>0.8</inf> Ga<inf>0.2</inf> As QW HEMTs with L<inf>g</inf> from $10 mu mathrm{m}$ to 20 nm, aiming to explore the scaling limit of f<inf>max</inf> and thereby demonstrate THz devices. The fabricated $L_{g}= 20$ nm device with $L_{side} = 150$ nm exhibited ${DIBL}=60$ mV/V and $f_{T}/ f_{max} quad =0.75 /1.1$ THz, while the device showed with $L_{side}=50$ nm ${DIBL}=110$ mV/V and $f_{T}/ f_{max}=0.72 /0.53$. Strict control of short-channel effects from the viewpoint of DIBL was central to maximize the enhancement of f<inf>max</inf> as L<inf>g</inf> scaled down aggressively. Moreover, we explained the physical mechanism of the decrease in f<inf>max</inf> for HEMTs with L<inf>g</inf> scaled down to sub-50 nm. The results in this work represent the best balance of f<inf>T</inf> and f<inf>max</inf> in any transistor technology and the highest f<inf>T</inf> in any FET technology.","PeriodicalId":275494,"journal":{"name":"2022 International Electron Devices Meeting (IEDM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114971685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Grating – Resonance InGaAs Narrowband Photodetector for Multispectral Detection in NIR – SWIR Region 用于近红外- SWIR多光谱探测的光栅共振InGaAs窄带光电探测器

2022 International Electron Devices Meeting (IEDM) Pub Date : 2022-12-03 DOI: 10.1109/IEDM45625.2022.10019463

Junho Jang, J. Shim, Jinha Lim, Gyeong Cheol Park, Jongmin Kim, Dae-Myeong Geum, Sanghyeon Kim

引用次数: 0

New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications 用于量子计算应用的28纳米CMOS和Ge mosfet在低温下过量1/f噪声的新见解

2022 International Electron Devices Meeting (IEDM) Pub Date : 2022-12-03 DOI: 10.1109/IEDM45625.2022.10019388

R. Asanovski, A. Grill, J. Franco, P. Palestri, A. Beckers, B. Kaczer, L. Selmi

{"title":"New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications","authors":"R. Asanovski, A. Grill, J. Franco, P. Palestri, A. Beckers, B. Kaczer, L. Selmi","doi":"10.1109/IEDM45625.2022.10019388","DOIUrl":"https://doi.org/10.1109/IEDM45625.2022.10019388","url":null,"abstract":"Cryo-CMOS characterization, modeling, and development have significantly progressed to help overcome the interconnection bottleneck between qubits and the readout interface of quantum computers. Nevertheless, available compact models for circuit design fail to predict the detrimental deviation of 1/f noise from the expected T scaling observed at cryogenic temperatures. In this paper, we extensively characterize noise on a commercial 28 nm CMOS technology as well as on Ge channel devices at temperatures ranging from 370 K down to 4 K. Our investigations give fundamental insights into the origin of the excess 1/f noise at low temperatures by excluding electron heating and bulk dielectric defects as possible causes. We show further evidence for a strong correlation between the excess 1/f noise and the saturation of the subthreshold swing (SS). A plausible cause of the excess noise is found in disorder-induced states in the channel acting as new trapping centers at cryogenic temperatures. Random telegraph noise (RTN) waveforms and power spectral density (PSD) measurements on small area MOSFETs support this explanation.","PeriodicalId":275494,"journal":{"name":"2022 International Electron Devices Meeting (IEDM)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116023653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Hybrid-Magnon Quantum Devices: Strategies and Approaches 混合磁振子量子器件:策略和方法

2022 International Electron Devices Meeting (IEDM) Pub Date : 2022-12-03 DOI: 10.1109/IEDM45625.2022.10019460

Y. Li, Jiangchao Qian, Z.-H. Jiang, Tzu-Hsiang Lo, D. Ding, T. Draher, T. Polakovic, W. Pfaff, A. Schleife, J. Zuo, W. Kwok, V. Novosad, A. Hoffmann

引用次数: 0