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2022 International Electron Devices Meeting (IEDM)最新文献

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Josephson parametric amplifiers for rapid, high-fidelity measurement of solid-state qubits 用于快速，高保真测量固态量子位的约瑟夫森参数放大器
2022 International Electron Devices Meeting (IEDM) Pub Date : 2022-12-03 DOI: 10.1109/IEDM45625.2022.10019347
S. Shankar, Z. Hao, W. Strickland, M. Hatefipour, J. Yuan, J. Shabani
{"title":"Josephson parametric amplifiers for rapid, high-fidelity measurement of solid-state qubits","authors":"S. Shankar, Z. Hao, W. Strickland, M. Hatefipour, J. Yuan, J. Shabani","doi":"10.1109/IEDM45625.2022.10019347","DOIUrl":"https://doi.org/10.1109/IEDM45625.2022.10019347","url":null,"abstract":"Josephson parametric amplifiers (JPAs) are crucial devices for readout of solid-state qubits. We review how to optimize the compression power and bandwidth of JPAs, necessary for realizing large-scale quantum information processors. We also discuss recent work to realize JPAs with a Josephson Junction Field Effect Transistor made from InAs-Al heterostructures.","PeriodicalId":275494,"journal":{"name":"2022 International Electron Devices Meeting (IEDM)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124770624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermally Resilient Microwave Switch and Power Limiter based on Insulator-Metal Transition of Lanthanum Cobalt Oxide 基于镧钴氧化物绝缘体-金属过渡的热弹性微波开关和功率限制器
2022 International Electron Devices Meeting (IEDM) Pub Date : 2022-12-03 DOI: 10.1109/IEDM45625.2022.10019425
R. Bhattacharya, A. Khanna, B. Bosworth, N. Orloff, V. Gambin, D. Streit, P. Fay, S. Datta
{"title":"Thermally Resilient Microwave Switch and Power Limiter based on Insulator-Metal Transition of Lanthanum Cobalt Oxide","authors":"R. Bhattacharya, A. Khanna, B. Bosworth, N. Orloff, V. Gambin, D. Streit, P. Fay, S. Datta","doi":"10.1109/IEDM45625.2022.10019425","DOIUrl":"https://doi.org/10.1109/IEDM45625.2022.10019425","url":null,"abstract":"A microwave frequency series switch and shunt power limiter based on the insulator-to-metal transition (IMT) of sputtered LaCoO3 on sapphire is demonstrated for the first time. We demonstrate isolation >15 dBm and high linearity with >35 dBm OIP3 crossover at 125°C and 40Gbps signal throughput. The limiter achieves the highest power limiting over the broadest temperature range ever reported for an IMT material-based RF limiter, from 25°C to 125°C. It achieves low insertion loss <1 dB, flat leakage profile at 12 dBm output power and a variable threshold power between 15 to 19.5 dB, with turn-on time <20 ns. Additionally, we present a three-dimensional COMSOL Multiphysics model incorporating material temperature-dependent properties that accurately predicts LCO RF device performance up to 125°C.","PeriodicalId":275494,"journal":{"name":"2022 International Electron Devices Meeting (IEDM)","volume":"69 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123954450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Methodology for an efficient characterization flow of industrial grade Si-based qubit devices 工业级硅基量子比特器件的有效表征流程方法
2022 International Electron Devices Meeting (IEDM) Pub Date : 2022-12-03 DOI: 10.1109/IEDM45625.2022.10019396
L. Contamin, B. Paz, B. Diaz, B. Bertrand, H. Niebojewski, V. Labracherie, A. Sadik, E. Catapano, M. Cassé, E. Nowak, Y. Niquet, F. Gaillard, T. Meunier, P. Mortemousque, M. Vinet
{"title":"Methodology for an efficient characterization flow of industrial grade Si-based qubit devices","authors":"L. Contamin, B. Paz, B. Diaz, B. Bertrand, H. Niebojewski, V. Labracherie, A. Sadik, E. Catapano, M. Cassé, E. Nowak, Y. Niquet, F. Gaillard, T. Meunier, P. Mortemousque, M. Vinet","doi":"10.1109/IEDM45625.2022.10019396","DOIUrl":"https://doi.org/10.1109/IEDM45625.2022.10019396","url":null,"abstract":"On-going efforts in scaling-up solid-state spin qubits are hindered by the need for a characterization workflow that assesses the correct device operation at low temperature, and for the associated quality and variability metrics. We present here our fast characterization methodology for qubit devices, and present wafer-level (WL) measurements on qubit-array structures at both 300K and 1K. Transistor-like metrics and material characterization provide feedbacks to process integration. They must be enriched by WL measurements at 1K that contain specific information about the electron confinement in a quantum dot. As such, they are crucial for process evaluation as well as device screening before continuing to mK characterization. We measure and automatically extract for the first time WL quantum dot metrics.","PeriodicalId":275494,"journal":{"name":"2022 International Electron Devices Meeting (IEDM)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123722470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 2T2R1C vision cell with 140 dB dynamic range and event-driven characteristics for in-sensor spiking neural network 具有140 dB动态范围和事件驱动特性的2T2R1C视觉单元，用于传感器内尖峰神经网络
2022 International Electron Devices Meeting (IEDM) Pub Date : 2022-12-03 DOI: 10.1109/IEDM45625.2022.10019350
Yue Zhou, Jiawei Fu, Tianqing Wan, Lin Xu, Sijie Ma, Jiewei Chen, Xiangshui Miao, Yuhui He, Yang Chai
{"title":"A 2T2R1C vision cell with 140 dB dynamic range and event-driven characteristics for in-sensor spiking neural network","authors":"Yue Zhou, Jiawei Fu, Tianqing Wan, Lin Xu, Sijie Ma, Jiewei Chen, Xiangshui Miao, Yuhui He, Yang Chai","doi":"10.1109/IEDM45625.2022.10019350","DOIUrl":"https://doi.org/10.1109/IEDM45625.2022.10019350","url":null,"abstract":"To efficiently process vision data at sensor terminals, we demonstrate a 2T2RlC pixel cell for in-sensor spike neural network (SNN) that can sense and process vision informations with event-driven characteristics. Compared with conventional event-based cameras with Si photodiode that requires complicated CMOS circuit design for high dynamic range (120dB), our2T2RlC cell with two-dimensioinal MoS2 phototransistors exhibits inherently high dynamic range (140 dB), thus greatly simplifying event-driven sensor circuit design. The photoresponvity of MoS2 phototransistors ranges from 1$0^{-4}$ to 104 mA/W by modulating gate voltages, emulating the synaptic weights in a neural network. Based on this sensor, we construct an in-sensor SNN and successfully perform a lane keeping task in an event-driven manner. Instead of sensing and generating the spike signals of all pixels, our design saves 97% data by only processing the local pixel with the change of light intensity. When an event is triggered (light intensity changes from 1.6 to 5.1 mWc$mathrm{m}^{-2}$), each pixel realizes event-based sensing and processing simultaneously with ultralow power consumption (160nW), showing the potential for energy-efficient edge intelligence.","PeriodicalId":275494,"journal":{"name":"2022 International Electron Devices Meeting (IEDM)","volume":"48 30","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120889048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Expanding Human Potential through Imaging and Sensing Technologies 通过成像和传感技术拓展人类潜能
2022 International Electron Devices Meeting (IEDM) Pub Date : 2022-12-03 DOI: 10.1109/IEDM45625.2022.10019533
Y. Oike
{"title":"Expanding Human Potential through Imaging and Sensing Technologies","authors":"Y. Oike","doi":"10.1109/IEDM45625.2022.10019533","DOIUrl":"https://doi.org/10.1109/IEDM45625.2022.10019533","url":null,"abstract":"The evolution of image sensors and utilization prospects of advanced imaging and sensing technologies promise to improve our quality of life. The evolution of imaging technology continues to invoke human emotion through beautiful images. The sensing technology has also emerged to enrich our society through meaningful data extracted from scenes. Pixel scaling technology and stacked device integration are driving the market for mobile imaging. Additionally, there have been breakthroughs for the practical applications of sensing technologies such as depth sensing, event-based vision sensing, and invisible light sensing. Integrated edge AI on image sensors is expected to open up new applications along with more scalability and flexibility of process technology owing to the evolution of stack integration. Image sensor technologies are expanding the sensing capabilities and aiming to create a safe and comfortable world that supports everyday life globally.","PeriodicalId":275494,"journal":{"name":"2022 International Electron Devices Meeting (IEDM)","volume":"19 11","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120918200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Heterogeneous 3D Sequential CFET with Ge (110) Nanosheet p-FET on Si (100) bulk n-FET by Direct Wafer Bonding 采用直接晶圆键合技术，在Si(100)体n-FET上制备Ge(110)纳米p-FET
2022 International Electron Devices Meeting (IEDM) Pub Date : 2022-12-03 DOI: 10.1109/IEDM45625.2022.10019551
S. Kim, Hyeongrak Lim, Jaejoong Jeong, Seung Woo Lee, Joon Pyo Kim, Jaeyoung Jeong, Bong-Ho Kim, Seungyeop Ahn, Y. Park, Dae-Myoung Geum, Younghyun Kim, Y. Baek, Byungchul Cho, Sang Hyeon Kim
{"title":"Heterogeneous 3D Sequential CFET with Ge (110) Nanosheet p-FET on Si (100) bulk n-FET by Direct Wafer Bonding","authors":"S. Kim, Hyeongrak Lim, Jaejoong Jeong, Seung Woo Lee, Joon Pyo Kim, Jaeyoung Jeong, Bong-Ho Kim, Seungyeop Ahn, Y. Park, Dae-Myoung Geum, Younghyun Kim, Y. Baek, Byungchul Cho, Sang Hyeon Kim","doi":"10.1109/IEDM45625.2022.10019551","DOIUrl":"https://doi.org/10.1109/IEDM45625.2022.10019551","url":null,"abstract":"In this work, we demonstrated 3D sequential complementary field-effect-transistor (CFET) by direct wafer bonding (DWB) technique and a low-temperature process for monolithic 3D(M3D) integration using a high-performance top Ge (110)/<110> channel on bottom Si CMOS. Here, the maximum thermal budget was up to 400°c during the fabrication of top Ge FET, allowing high-performance heterogenous Ge/Si CFET without damage to bottom Si FETs. Furthermore, we systematically investigated the mobility enhancement to channel orientation in thin Ge (110) nanosheet channel pFET. Low effective hole mass along <110> direction on Ge (110), which was calculated by the k$cdot$p method, provided record high mobility of approximately 400 cm2/V$cdot$ s (corresponds to 743 cm2/V$cdot$ s when normalized by footprint) among the reported Ge pFET with similar channel thicknesses at room temperature.","PeriodicalId":275494,"journal":{"name":"2022 International Electron Devices Meeting (IEDM)","volume":"15 12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127644387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hardware Based Performance Assessment of Vertical-Transport Nanosheet Technology 基于硬件的垂直传输纳米片技术性能评估
2022 International Electron Devices Meeting (IEDM) Pub Date : 2022-12-03 DOI: 10.1109/IEDM45625.2022.10019393
G. Tsutsui, S. Song, J. Strane, R. Xie, L. Qin, C. Zhang, D. Schmidt, S. Fan, B. Hong, Y. Jung, C. Sohn, I. Hwang, J. Yim, G. Son, G. Jo, Kihwan Kim, M. Sankarapandian, S. Mochizuki, I. Seshadri, E. Miller, J. Li, J. Demarest, C. Waskiewicz, R. Southwick, H. Zhou, R. Pujari, P. Nieves, M. Wang, H. Jagannathan, B. Anderson, D. Guo, R. Divakaruni, T. Wu, K. Seo, H. Bu
{"title":"Hardware Based Performance Assessment of Vertical-Transport Nanosheet Technology","authors":"G. Tsutsui, S. Song, J. Strane, R. Xie, L. Qin, C. Zhang, D. Schmidt, S. Fan, B. Hong, Y. Jung, C. Sohn, I. Hwang, J. Yim, G. Son, G. Jo, Kihwan Kim, M. Sankarapandian, S. Mochizuki, I. Seshadri, E. Miller, J. Li, J. Demarest, C. Waskiewicz, R. Southwick, H. Zhou, R. Pujari, P. Nieves, M. Wang, H. Jagannathan, B. Anderson, D. Guo, R. Divakaruni, T. Wu, K. Seo, H. Bu","doi":"10.1109/IEDM45625.2022.10019393","DOIUrl":"https://doi.org/10.1109/IEDM45625.2022.10019393","url":null,"abstract":"Vertical-transport FET (VTFET) is a strong candidate for future CMOS technology. The concept of VTFET has been demonstrated in our previous report, which enables to scale logic area beyond sub-45nm contacted gate pitch (CGP). This paper focuses on performance assessment of VTFET based on hardware (HW). 1. 2x effective capacitance $(mathrm{C}_{mathrm{e}mathrm{f}mathrm{f}})$ contrasting to technology target is demonstrated based on 40CGP VTFET ring oscillator. Two major bottlenecks are identified as DC performance $(mathrm{I}_{mathrm{e}mathrm{f}mathrm{f}}$ at target $mathrm{I}_{mathrm{o}mathrm{f}mathrm{f}}$) detractor. 90% DC performance compared to the target has been demonstrated by resolving the bottlenecks.","PeriodicalId":275494,"journal":{"name":"2022 International Electron Devices Meeting (IEDM)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126530143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Towards Topological Superconducting Qubits 迈向拓扑超导量子比特
2022 International Electron Devices Meeting (IEDM) Pub Date : 2022-12-03 DOI: 10.1109/IEDM45625.2022.10019353
William F Schiela, B. H. Elfeky, J. Shabani
{"title":"Towards Topological Superconducting Qubits","authors":"William F Schiela, B. H. Elfeky, J. Shabani","doi":"10.1109/IEDM45625.2022.10019353","DOIUrl":"https://doi.org/10.1109/IEDM45625.2022.10019353","url":null,"abstract":"Topological superconductivity (TS) is a rare phase of matter with an unconventional superconducting pairing function compared with the archetypal s-wave pairing of weakly-coupled Bardeen-Cooper-Schrieffer theory. The TS state is accompanied by quasiparticle excitations that occur at the boundaries of a finite system and are robust to local perturbations smaller than the topological gap, making it a prime candidate for encoding quantum information in a physical substrate with long coherence times. These quasiparticles further exhibit non-trivial exchange statistics that may be used to implement high-fidelity quantum logic gates. Here we present progress in the realization of topological qubits in hybrid superconductor-semiconductor heterostructures, including advances toward the demonstration of their exchange statistics.","PeriodicalId":275494,"journal":{"name":"2022 International Electron Devices Meeting (IEDM)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128089769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ab-initio transport simulations unveil the Schottky versus Tunneling barrier trade-off in metal-TMD contacts Ab-initio输运模拟揭示了金属- tmd接触中的肖特基势垒与隧道势垒的权衡
2022 International Electron Devices Meeting (IEDM) Pub Date : 2022-12-03 DOI: 10.1109/IEDM45625.2022.10019449
D. Lizzit, P. Khakbaz, F. Driussi, M. Pala, D. Esseni
{"title":"Ab-initio transport simulations unveil the Schottky versus Tunneling barrier trade-off in metal-TMD contacts","authors":"D. Lizzit, P. Khakbaz, F. Driussi, M. Pala, D. Esseni","doi":"10.1109/IEDM45625.2022.10019449","DOIUrl":"https://doi.org/10.1109/IEDM45625.2022.10019449","url":null,"abstract":"We investigate several options for metal contacts to monolayer 2D semiconductors with an in-house developed, ab-initio transport methodology. We identify an optimum separation between the metal and the semiconductor resulting in minimum contact resistance $(R_{mathrm{C}})$. Such a minimum $R_{mathrm{C}}$ is fundamentally related to the trade-off between Schottky barrier height and tunneling barrier width. We examine quantitatively the effects of buffer layers and report, for the first time, ab-initio R calculations for the $mathrm{b}mathrm{i}mathrm{s}mathrm{m}mathrm{u}mathrm{t}mathrm{h}-mathrm{M}mathrm{o}mathrm{S}_{2}$ system, comprising the influence of the inelastic electron-phonon interaction. Finally, we investigate $mathrm{A}mathrm{u}-mathrm{W}mathrm{S}mathrm{e}_{2}$ as a material system for a low $R_{mathrm{C}}$ -type contact.","PeriodicalId":275494,"journal":{"name":"2022 International Electron Devices Meeting (IEDM)","volume":"62 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130111300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Superlattice HfO2-ZrO2 based Ferro-Stack HfZrO2 FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 109 cycles for Multibit NVM 基于超晶格HfO2-ZrO2的铁堆栈HfZrO2效应管:具有超低误差、低编程电压4 V和109周期的多比特NVM的均匀域优点
2022 International Electron Devices Meeting (IEDM) Pub Date : 2022-12-03 DOI: 10.1109/IEDM45625.2022.10019369
C.-Y. Liao, Z.-F. Lou, C. Lin, A. Senapati, R. Karmakar, K.-Y. Hsiang, Z.-X. Li, Wei-Chang Ray, J.-Y. Lee, P. Chen, Fu-Sheng Chang, H. Tseng, C. Wang, Jung-Hsun Tsai, Y. Tang, S. T. Chang, C. Liu, S. Maikap, M. H. Lee
{"title":"Superlattice HfO2-ZrO2 based Ferro-Stack HfZrO2 FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 109 cycles for Multibit NVM","authors":"C.-Y. Liao, Z.-F. Lou, C. Lin, A. Senapati, R. Karmakar, K.-Y. Hsiang, Z.-X. Li, Wei-Chang Ray, J.-Y. Lee, P. Chen, Fu-Sheng Chang, H. Tseng, C. Wang, Jung-Hsun Tsai, Y. Tang, S. T. Chang, C. Liu, S. Maikap, M. H. Lee","doi":"10.1109/IEDM45625.2022.10019369","DOIUrl":"https://doi.org/10.1109/IEDM45625.2022.10019369","url":null,"abstract":"Superlattice (SL) HfO2-ZrO2 with physical thickness of 5 nm and low phase fraction ratio 0.101:1 of monoclinic-phase (m-phase) to orthorhombic-phase (o-phase) investigated by geometrical phase analysis (GPA) is demonstrated. The homogeneous and congruous of SL-HfZrO2 (HZO) with sufficient ferroelectric-domain is integrated as ferro-stack FeFETs for multibit NVM with low |VPG/ER| = 4 V, ultra-low error rate = 7.5×10-16, record high 2-bit endurance for 109 cycles, and stable data retention > 104 s. The device-to-device (D2D) variation of nanoscale 3D FeFETs is also improved with the proposed SL-HZO. The superlattice technique for FE-HZO is a promising concept with elevating the coherence of domain access due to high o-phase toward emerging memory applications.","PeriodicalId":275494,"journal":{"name":"2022 International Electron Devices Meeting (IEDM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130206583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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