Methodology for an efficient characterization flow of industrial grade Si-based qubit devices

Abstract

On-going efforts in scaling-up solid-state spin qubits are hindered by the need for a characterization workflow that assesses the correct device operation at low temperature, and for the associated quality and variability metrics. We present here our fast characterization methodology for qubit devices, and present wafer-level (WL) measurements on qubit-array structures at both 300K and 1K. Transistor-like metrics and material characterization provide feedbacks to process integration. They must be enriched by WL measurements at 1K that contain specific information about the electron confinement in a quantum dot. As such, they are crucial for process evaluation as well as device screening before continuing to mK characterization. We measure and automatically extract for the first time WL quantum dot metrics.