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Some properties of a room temperature THz detection array 室温太赫兹探测阵列的一些特性
International Conference on Advanced Optical Materials and Devices Pub Date : 2006-02-19 DOI: 10.1117/12.726404
I. Kašalynas, A. Adam, T. Klaassen, Niels Hovenier, G. Pandraud, V. Iordanov, P. Sarro
{"title":"Some properties of a room temperature THz detection array","authors":"I. Kašalynas, A. Adam, T. Klaassen, Niels Hovenier, G. Pandraud, V. Iordanov, P. Sarro","doi":"10.1117/12.726404","DOIUrl":"https://doi.org/10.1117/12.726404","url":null,"abstract":"Detection peculiarities of an un-cooled (room temperature) 8x8 pixel array designed to image broadband THz radiation were investigated. Each pixel consists of a thin conductive film absorber on a dielectric membrane with thermopile temperature readout. It was designed and tested for four combinations of two different types of absorber and thermopile materials. The photo-response profile, determined by scanning the pixels through the focus of a THz laser beam, was wider than expected from a 2-D convolution of the Gaussian beam and the absorber surface. Also the time response did depend on the position of the beam relative to the pixel. Simulations show that those properties are due to the fact that also the thermopiles absorb THz radiation. For the best composition of absorber and thermopile, the responsivity, the noise equivalent power, and the bandwidth were estimated to be of 28 V/W, 5x10-9 W/Hz1/2 and 50 Hz, respectively.","PeriodicalId":273853,"journal":{"name":"International Conference on Advanced Optical Materials and Devices","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129904978","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Phase shift detection of surface plasmon using spectral ellipsometer 利用光谱椭偏仪检测表面等离子体的相移
International Conference on Advanced Optical Materials and Devices Pub Date : 2006-02-19 DOI: 10.1117/12.726473
V. Vaicikauskas, Z. Balevičius
{"title":"Phase shift detection of surface plasmon using spectral ellipsometer","authors":"V. Vaicikauskas, Z. Balevičius","doi":"10.1117/12.726473","DOIUrl":"https://doi.org/10.1117/12.726473","url":null,"abstract":"The phase change caused by excitation of surface plasmons (SP) in a Kretschmann configuration was measured by a rotating polarizer scheme using commercial spectral ellipsometer (GES5, SOPRA, Co). The setup was used to determinate the optical constants at 800 nm of an octadecanthiol (ODT) with a thickness of 9 nm on a gold film. The numerical values n=0.18, k=3.44 for the Au film, and n=1.4 for ODT were obtained by a best-fit procedure to experimental data. From model calculations it is argued that in thin-film cases SP phase measurements give more precise values for the optical constants than conventional ellipsometry and SP amplitude methods. Combination of SP method with advantages of phase measurements of ellipsometry showed sufficient increase in sensitivity (more than one order of magnitude). This methodology could be used for detection of monolayer and even submonolayer films on metals.","PeriodicalId":273853,"journal":{"name":"International Conference on Advanced Optical Materials and Devices","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121842044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Compact multi-functional skin spectrometry set-up 紧凑的多功能皮肤光谱装置
International Conference on Advanced Optical Materials and Devices Pub Date : 2006-02-19 DOI: 10.1117/12.726455
I. Kuzmina, A. Lihachev, L. Gailite, J. Spigulis
{"title":"Compact multi-functional skin spectrometry set-up","authors":"I. Kuzmina, A. Lihachev, L. Gailite, J. Spigulis","doi":"10.1117/12.726455","DOIUrl":"https://doi.org/10.1117/12.726455","url":null,"abstract":"A portable fibre-optic spectrometry set-up has been assembled and tested for applications in skin diffuse reflectance spectrometry, laser fluorescence spectrometry and multi-wavelength reflection photoplethysmography (multi-PPG) studies. The spectrometry set was tested by diffuse reflectance and fluorescence measurements for diagnostics of skin vascular malformations and pigmented diseases such as nevi and melanoma. In addition, studies of microcirculation in blood vessels located at different depths from the skin surface were performed by the multi-PPG method. The results of skin diffuse reflectance and autofluorescence showed differences in spectra of healthy and pathologic skin. The parameter ratio \"pathologic/healthy\" has been calculated in order to check the possibility of quantifying the specific pathology. The autofluorescence fading effect was observed. Our studies of the blood volume pulsations confirmed the possibility to separate the time-variable PPG component from the total skin diffuse reflectance signal.","PeriodicalId":273853,"journal":{"name":"International Conference on Advanced Optical Materials and Devices","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125473145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Effect of strong electric field on electrical characteristics of two-terminal porous silicon structures 强电场对双端多孔硅结构电学特性的影响
International Conference on Advanced Optical Materials and Devices Pub Date : 2006-02-19 DOI: 10.1117/12.726491
E. Shatkovskis, A. Česnys, J. Gradauskas, J. Stupakova, O. Kiprijanovič
{"title":"Effect of strong electric field on electrical characteristics of two-terminal porous silicon structures","authors":"E. Shatkovskis, A. Česnys, J. Gradauskas, J. Stupakova, O. Kiprijanovič","doi":"10.1117/12.726491","DOIUrl":"https://doi.org/10.1117/12.726491","url":null,"abstract":"Two-terminal diode-like porous silicon structures have been investigated under the impact of strong electric field. Strong electric field I-V current-voltage characteristics have been measured in pulse regime by applying electric pulses of 15 ns duration, at repetition rate of (100-150) Hz, creating average electric field in the structure up to (103-104) V/cm. Modification of structured state of the structures have been revealed at strong electric field influence, resulting in change and stabilizing of their series resistance.","PeriodicalId":273853,"journal":{"name":"International Conference on Advanced Optical Materials and Devices","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115187950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Radiation of novel type emitted by microchip laser 新型微芯片激光器发射的辐射
International Conference on Advanced Optical Materials and Devices Pub Date : 2006-02-19 DOI: 10.1117/12.726463
A. Dmitryuk, L. Maksimov, G. Petrovsky, Vladimir A. Savostyanov
{"title":"Radiation of novel type emitted by microchip laser","authors":"A. Dmitryuk, L. Maksimov, G. Petrovsky, Vladimir A. Savostyanov","doi":"10.1117/12.726463","DOIUrl":"https://doi.org/10.1117/12.726463","url":null,"abstract":"Novel highly concentrated Yb/Er and Nd phosphate glasses were elaborated and microchip lasers were produced. Lasing parameters of Yb/Er and Nd phosphate glasses were studied. Novel type of radiation excited by pumping power sufficiently high for amplification of radiation but lower than lasing threshold was observed. It was found that indicatrix and spectrum (comb spectrum) of this radiation differed from the parameters of both luminescence and lasing radiation. It was found that the modulated radiation emitted by the micro-chip lasers was super luminescence. Spectral separation between adjacent lines of comb spectrum varies with radiation wavelength, length of Fabry-Perot resonator and refractive index of amplifying medium. The phenomenon of super luminescence modulation in Fabry-Perot micro resonator can be used for designing the simplest comb spectral channels generators for DWDM working in 0.9-1.6 &mgr;m spectral range. 200 and 250 spectral channels were realized for Yb/Er and Nd microchip lasers, correspondingly.","PeriodicalId":273853,"journal":{"name":"International Conference on Advanced Optical Materials and Devices","volume":"244 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116148259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Magnetic circular dichroism of iron porphyrin 铁卟啉的磁性圆二色性
International Conference on Advanced Optical Materials and Devices Pub Date : 2006-02-19 DOI: 10.1117/12.726514
R. Tamaševičius, I. Šimkienė, A. Rėza, Irvis Blažys, G. Babonas
{"title":"Magnetic circular dichroism of iron porphyrin","authors":"R. Tamaševičius, I. Šimkienė, A. Rėza, Irvis Blažys, G. Babonas","doi":"10.1117/12.726514","DOIUrl":"https://doi.org/10.1117/12.726514","url":null,"abstract":"Magnetic circular dichroism of iron porphyrin aqueous solutions was studied using a photometric ellipsometer with photoelastic modulator of light polarization in the spectral range 350-750 nm in magnetic fields up to 350 mT. Buffered aqueous solutions of iron porphyrin with pH-values equal to 1.7, 3.6 and 6.8 and concentration 0.1-1.0 mM were prepared by dissolving Fe(III) meso-tetra(4- sulfonatophenyl)porphine chloride. The spectra of magnetic circular dichroism were observed in the region of Soret band (390-420 nm) and Q-bands (500-700 nm). The lineshape analysis of magnetic circular dichroism spectra has shown that A-terms were dominant though a significant overlap masked the fine structure of the Q-bands. The magnetic circular dichroism signal was of order 1x10-2 cm-1/T in a linear approximation with respect to magnetic field. The data indicated that complete lifting of the degeneracy of the states involved in the corresponding optical transitions did not occurred in magnetic fields used. The model of the ground and excited states in iron porphyrin was discussed.","PeriodicalId":273853,"journal":{"name":"International Conference on Advanced Optical Materials and Devices","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128038145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Free-hole spin precession trajectories in A3B5 compounds A3B5化合物的自由空穴自旋进动轨迹
International Conference on Advanced Optical Materials and Devices Pub Date : 2006-02-19 DOI: 10.1117/12.726411
A. Dargys
{"title":"Free-hole spin precession trajectories in A3B5 compounds","authors":"A. Dargys","doi":"10.1117/12.726411","DOIUrl":"https://doi.org/10.1117/12.726411","url":null,"abstract":"Spin precession of a ballistic-hole when external magnetic field is absent and when the hole freely propagates in either heavy- or light-mass band is considered. The spin precession is due to linear in wave vector terms in the Luttinger-Kohn Hamiltonian. It was found that in contrast to conduction-band the valence band spin precession orbits are not circular. They are either ellipses or lines for light- and heavy-holes, respectively. The results of the paper can be applied to describe hole spin-dynamics in A3B5 compounds, for example, in simulation of spin-FETs by Monte Carlo method.","PeriodicalId":273853,"journal":{"name":"International Conference on Advanced Optical Materials and Devices","volume":"108 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125215318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
GaAs/AlAs quantum wells for selective terahertz sensing: study by differential surface photovoltage spectroscopy 选择性太赫兹传感的GaAs/AlAs量子阱:差分表面光电压谱的研究
International Conference on Advanced Optical Materials and Devices Pub Date : 2006-02-19 DOI: 10.1117/12.726400
J. Kavaliauskas, B. Čechavičius, G. Krivaitė, D. Seliuta, G. Valušis, B. Sherliker, M. Halsall, P. Harrison, S. Khanna, E. Linfield
{"title":"GaAs/AlAs quantum wells for selective terahertz sensing: study by differential surface photovoltage spectroscopy","authors":"J. Kavaliauskas, B. Čechavičius, G. Krivaitė, D. Seliuta, G. Valušis, B. Sherliker, M. Halsall, P. Harrison, S. Khanna, E. Linfield","doi":"10.1117/12.726400","DOIUrl":"https://doi.org/10.1117/12.726400","url":null,"abstract":"We have studied interband optical transitions, electronic structure and structural quality of p-type (Be) and n-type (Si) &dgr;- doped GaAs/AlAs MQWs designed for selective THz sensing applying differential surface photovoltage (DSPV) spectroscopy. Sharp derivative-like features associated with excitonic optical transitions in GaAs/AlAs MQWs have been observed in the spectra at 300 K and 90 K temperature. The energies and line broadening parameters for a large number of QW related excitonic transitions were determined from the line-shape analysis of the DSPV spectra. The spectroscopic data of transition energies were found to be in a good agreement with calculations within the envelope function approximation which took into account the nonparabolicity of energy bands. Analysis of the dependence of the exciton linewidth broadening on the quantum subband number allowed evaluate line-broadening mechanisms and interface roughness in the MQW structures. It was determined that doping with Si broadens more effectively the optical spectra lines in comparison with the structures of the same design doped with Be.","PeriodicalId":273853,"journal":{"name":"International Conference on Advanced Optical Materials and Devices","volume":"179 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123285026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sub-bandgap light hologram recording in amorphous chalcogenides 非晶硫化物的亚带隙光全息记录
International Conference on Advanced Optical Materials and Devices Pub Date : 2006-02-19 DOI: 10.1117/12.726508
A. Ozols, D. Saharov
{"title":"Sub-bandgap light hologram recording in amorphous chalcogenides","authors":"A. Ozols, D. Saharov","doi":"10.1117/12.726508","DOIUrl":"https://doi.org/10.1117/12.726508","url":null,"abstract":"Sub-bandgap light recording (SBLR) of holograms is studied basing on the experiments in a-As2S3 films and literature data. Holographic grating recording with focused (light intensity I = 14 - 124 W/cm2 ) and unfocused (I = 0.50 - 0.78 W/cm2) 632.8 nm He-Ne laser sub-bandgap light in non-annealed and annealed a-As2S3 films has been experimentally studied. The focused light recording is found to be much more efficient (diffraction efficiency up to 14.9%, specific recording energy down to 216 J/(cm2%)) than the unfocused light recording (0.11%, 72400 J/(cm2%)). Some other properties are also different. The focused light recording is explained by the photothermally stimulated relaxational structural changes (RSC) accompanied by the photoinduced generation and recharging of D-centers. The unfocused light recording is explained by the photorientation of D-centers with some contribution of RSC . SBLR in materials other than a-As2S3 films was considered and the conclusion was made that amorphous sulfides and selenides are expected to be the best SBLR recording materials. SBLR is advantageous because of its bulk nature enabling the production of homogeneous holographic optical volume elements and devices.","PeriodicalId":273853,"journal":{"name":"International Conference on Advanced Optical Materials and Devices","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123836169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Optical properties of the undoped and SiOx doped DLC films 未掺杂和SiOx掺杂DLC薄膜的光学性质
International Conference on Advanced Optical Materials and Devices Pub Date : 2006-02-19 DOI: 10.1117/12.726556
Š. Meškinis, V. Kopustinskas, Kęstutis Šlapikas, R. Gudaitis, S. Tamulevičius, G. Niaura, V. Rinnerbauer, K. Hingerl
{"title":"Optical properties of the undoped and SiOx doped DLC films","authors":"Š. Meškinis, V. Kopustinskas, Kęstutis Šlapikas, R. Gudaitis, S. Tamulevičius, G. Niaura, V. Rinnerbauer, K. Hingerl","doi":"10.1117/12.726556","DOIUrl":"https://doi.org/10.1117/12.726556","url":null,"abstract":"In present study DLC films were deposited by direct ion beam deposition. Hexamethyldisiloxane vapor and hydrogen gas mixture, mixture of the hexamethyldisiloxane with acetylene as well as acetylene gas alone has been used as a source of the hydrocarbons. Optical properties of the synthesized films were investigated by spectroscopic ellipsometry. Structure of the DLC films has been studied by means of the Raman spectroscopy. Effects of the technological deposition parameters such as composition of the gas precursors, ion beam energy, ion beam current density were considered.","PeriodicalId":273853,"journal":{"name":"International Conference on Advanced Optical Materials and Devices","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115109907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
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