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Destruction of the nano-size solid particles under femtosecond laser pulse action 飞秒激光脉冲作用下纳米级固体颗粒的破坏
International Conference on Advanced Optical Materials and Devices Pub Date : 2006-02-19 DOI: 10.1117/12.726412
V. Gruzdev, V. Komolov, S. Przhibel'skii, D. Smirnov
{"title":"Destruction of the nano-size solid particles under femtosecond laser pulse action","authors":"V. Gruzdev, V. Komolov, S. Przhibel'skii, D. Smirnov","doi":"10.1117/12.726412","DOIUrl":"https://doi.org/10.1117/12.726412","url":null,"abstract":"The results of both analytical and numerical study of the optical damage of a solid nano-size particle, partly ionized by an ultra-short laser pulse (USLP) are presented. The comparison of the results that has been obtained analytically and numerically shows that the proposed method allows to describe the main features of nano-particle damage induced by Coulomb forces, that arise in solid due to the charge equilibrium distortion under USLP action. The kinetics of energy spectra of the spreading ions has been analyzed taking into account the Coulomb repulsive forces and the retarding processes that restrict ion motion inside the particle.","PeriodicalId":273853,"journal":{"name":"International Conference on Advanced Optical Materials and Devices","volume":"133 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124566104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Synthesis and properties of PbSexS1-x alloyed nanocrystals PbSexS1-x合金纳米晶体的合成与性能研究
International Conference on Advanced Optical Materials and Devices Pub Date : 2006-02-19 DOI: 10.1117/12.726402
A. Kigel, M. Brumer, L. Amirav, A. Sashchiuk, E. Lifshitz
{"title":"Synthesis and properties of PbSexS1-x alloyed nanocrystals","authors":"A. Kigel, M. Brumer, L. Amirav, A. Sashchiuk, E. Lifshitz","doi":"10.1117/12.726402","DOIUrl":"https://doi.org/10.1117/12.726402","url":null,"abstract":"We present a comparative study of colloidal PbSexS1-x alloyed nanocrystals (NCs) with variation of chemical composition and different structure (core-shell and homogeneous) prepared by a single-injection procedure with respect to corresponding PbSe core NCs and PbSe/PbS core-shell NCs prepared by the traditional two-injection procedure. The narrow band edge of absorption and photoluminescence 1S-exciton energy of PbSexS1-x alloyed NCs were tuned (blue shifted) from the band edge of the same size PbSe NCs to the band edge of PbS NCs by controlling the Se+S/Pb molar ratio in the synthetic mixture. The magnitude of the Stokes shift was found to be dependent upon the size of NCs and on the core(shell) chemical composition. The largest Stokes shift (100 meV) was observed in the smaller PbSe NCs, while PbSexS1-x core-alloyed shell NCs prepared by a single-injection procedure show the vanishing small Stokes shift.","PeriodicalId":273853,"journal":{"name":"International Conference on Advanced Optical Materials and Devices","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124819880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Nanosecond and picosecond pulse transmission in optical fibres 光纤中的纳秒和皮秒脉冲传输
International Conference on Advanced Optical Materials and Devices Pub Date : 2006-02-19 DOI: 10.1117/12.726467
J. Porins, A. Ozols, P. Onufrijevs
{"title":"Nanosecond and picosecond pulse transmission in optical fibres","authors":"J. Porins, A. Ozols, P. Onufrijevs","doi":"10.1117/12.726467","DOIUrl":"https://doi.org/10.1117/12.726467","url":null,"abstract":"The transmission light intensity dependences of different silica glass fibres have been experimentally studied when nanosecond pulse trains were incident. A pronounced 13-42% transmission increase was found in contrast to the picosecond pulse irradiation when a monotonic transmission decrease took place. The photoinduced transmission increase is explained in terms of photothermally increased numerical aperture, the photothermal lens effect, and the photoinduced saturation of a weak impurity absorption. The obtained results can be applied in high power applications of fibres such as WDM fibre communication systems.","PeriodicalId":273853,"journal":{"name":"International Conference on Advanced Optical Materials and Devices","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129406770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Spectrophotometric and Raman spectroscopic characterization of ALD grown TiO2 thin films ALD生长TiO2薄膜的分光光度和拉曼光谱表征
International Conference on Advanced Optical Materials and Devices Pub Date : 2006-02-19 DOI: 10.1117/12.726492
J. Aarik, A. Kasikov, A. Niilisk
{"title":"Spectrophotometric and Raman spectroscopic characterization of ALD grown TiO2 thin films","authors":"J. Aarik, A. Kasikov, A. Niilisk","doi":"10.1117/12.726492","DOIUrl":"https://doi.org/10.1117/12.726492","url":null,"abstract":"Properties of titanium dioxide thin films grown by atomic layer deposition from TiCl4 and H2O on SiO2 substrates were characterized using Raman spectroscopy and spectrophotometry methods. Raman spectroscopy revealed transformation of the film structure from amorphous to anatase, to anatase/rutile mixture and then back to anatase with the increase of deposition temperature from 100 to 680oC. Variations in the growth rate, refractive index and extinction index accompanied these structural changes. Analysis of the transmission curves demonstrated that differently from amorphous films, the crystalline films were optically inhomogeneous in the growth direction.","PeriodicalId":273853,"journal":{"name":"International Conference on Advanced Optical Materials and Devices","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127920838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Sensitivity of a spectral device based on acousto-optic tunable filter 基于声光可调滤波器的光谱器件的灵敏度
International Conference on Advanced Optical Materials and Devices Pub Date : 2006-02-19 DOI: 10.1117/12.726360
B. Gurevich, S. Andreyev, A. Belyaev, Japar Ismailov, Aftandil Nurkamilov
{"title":"Sensitivity of a spectral device based on acousto-optic tunable filter","authors":"B. Gurevich, S. Andreyev, A. Belyaev, Japar Ismailov, Aftandil Nurkamilov","doi":"10.1117/12.726360","DOIUrl":"https://doi.org/10.1117/12.726360","url":null,"abstract":"The possibilities to transmit maximum amount of information for spectral devices based on acousto-optic tunable filter (AOTF) are defined not only by the AOTF selectivity and, correspondingly, by the total amount of distinguished spectral intervals but also by the device threshold sensitivity. The necessary sensitivity estimation of the photosensitive components required to provide the device operation with given selectivity has been performed. We have also described the experimental investigations of the specially designed spectral device containing an AOTF as a monochromator component. The AOTF specially elaborated for this purpose provides selection of spectral intervals with bandpass of several nm, depending on its place in the total spectral range. Information characteristics of such spectral devices have been also discussed.","PeriodicalId":273853,"journal":{"name":"International Conference on Advanced Optical Materials and Devices","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126726609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Formation of low energy tails in silicon &dgr;-doped GaAs/AlAs multiple quantum wells 掺硅GaAs/AlAs多量子阱中低能尾的形成
International Conference on Advanced Optical Materials and Devices Pub Date : 2006-02-19 DOI: 10.1117/12.726489
A. Cerskus, Jurgis Kundrotas, G. Valušis, P. Harrison, S. Khanna, E. Linfield
{"title":"Formation of low energy tails in silicon &dgr;-doped GaAs/AlAs multiple quantum wells","authors":"A. Cerskus, Jurgis Kundrotas, G. Valušis, P. Harrison, S. Khanna, E. Linfield","doi":"10.1117/12.726489","DOIUrl":"https://doi.org/10.1117/12.726489","url":null,"abstract":"In this article we present results of an investigation the PL properties of highly Si &dgr;-doped GaAs/AlAs multiple QWs at liquid nitrogen and room temperatures. We discuss possible mechanisms for carrier recombination in the QW structures placing particular emphasis on the origin of the low energy tail in the PL spectra, and its features.","PeriodicalId":273853,"journal":{"name":"International Conference on Advanced Optical Materials and Devices","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126354062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Quantum well interface broadening effects 量子阱界面展宽效应
International Conference on Advanced Optical Materials and Devices Pub Date : 2006-02-19 DOI: 10.1117/12.726499
V. Gavryushin
{"title":"Quantum well interface broadening effects","authors":"V. Gavryushin","doi":"10.1117/12.726499","DOIUrl":"https://doi.org/10.1117/12.726499","url":null,"abstract":"We have derived and analyzed the wavefunctions and eigenstates for quantum wells (QW), broadened due to static interface disorder, within Discreet Variable Representation (DVR) approach of Colbert and Miller. The main advantage of this approach, which we have tested, is that it allows to obtain ab-initio and to analyze the shift and broadening of resonance states in a semiconductor quantum wells of different shapes. Calculations based on the convolution methods were used to include the influence of disorder to the formation of heterojunction interfaces.","PeriodicalId":273853,"journal":{"name":"International Conference on Advanced Optical Materials and Devices","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121636971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Generation of coherent terahertz radiation due to optical-phonon emission assisted transit-time resonance in quantum wells and heterolayers 量子阱和异质层中由光声子发射辅助跃迁时间共振产生的相干太赫兹辐射
International Conference on Advanced Optical Materials and Devices Pub Date : 2006-02-19 DOI: 10.1117/12.726365
P. Shiktorov, E. Starikov, V. Gruzinskis, L. Varani, C. Palermo, J. Millithaler
{"title":"Generation of coherent terahertz radiation due to optical-phonon emission assisted transit-time resonance in quantum wells and heterolayers","authors":"P. Shiktorov, E. Starikov, V. Gruzinskis, L. Varani, C. Palermo, J. Millithaler","doi":"10.1117/12.726365","DOIUrl":"https://doi.org/10.1117/12.726365","url":null,"abstract":"To analyze the main features of THz radiation generation caused by optical-phonon transit-time resonance a simplified analytical model is developed in terms of some generalized parameters of bulk materials and 2D structures. In the framework of such a model and direct Monte Carlo simulations an increase up to 5 times of the cutoff frequency for THz radiation generation is predicted going from 3D and 2D transport.","PeriodicalId":273853,"journal":{"name":"International Conference on Advanced Optical Materials and Devices","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114249335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 60 GHz microwave resonance investigation of shallowly formed InAs quantum dots embedded in GaAs 浅层嵌入砷化镓的InAs量子点的60 GHz微波共振研究
International Conference on Advanced Optical Materials and Devices Pub Date : 2006-02-19 DOI: 10.1117/12.726363
N. Žurauskienė, G. Janssen, E. Goovaerts, M. Godlewski, V. Ivanov, P. Koenraad
{"title":"A 60 GHz microwave resonance investigation of shallowly formed InAs quantum dots embedded in GaAs","authors":"N. Žurauskienė, G. Janssen, E. Goovaerts, M. Godlewski, V. Ivanov, P. Koenraad","doi":"10.1117/12.726363","DOIUrl":"https://doi.org/10.1117/12.726363","url":null,"abstract":"Shallowly formed InAs quantum dots (QDs) embedded in GaAs are investigated by Optically Detected Microwave Resonance (ODMR) technique. The low temperature (1.6 K) photoluminescence (PL) spectrum reveals a two-peak structure which is attributed to two different classes of QDs: smaller and larger in size. V-band (60 GHz) ODMR is selectively detected in each of the peaks and depending on the PL detection energy, a different ODMR spectrum is obtained. Detection in the high-energy band reveals a low-field negative signal which is ascribed to cyclotron resonance of the electron in the two-dimensional wetting layer, corresponding to an effective mass of 0.067 m0. The microwave-induced signal at higher fields (~1.1 T) is tentatively attributed to magnetic resonance transitions between spin states of the holes confined in the smaller QDs. When monitoring the emission of the larger QDs, the obtained microwave-induced signal is negative while the resonance line at low field, associated with the cyclotron resonance, is no longer present. The V-band ODMR spectra are compared with W-band (94 GHz) measurements obtained for the same QD structure.","PeriodicalId":273853,"journal":{"name":"International Conference on Advanced Optical Materials and Devices","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116181034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Influence of energy bands distortion on non-steady-state photo-induced electromotive force in semiconductors 能带畸变对半导体中非稳态光致电动势的影响
International Conference on Advanced Optical Materials and Devices Pub Date : 2006-02-19 DOI: 10.1117/12.726369
A. Konin
{"title":"Influence of energy bands distortion on non-steady-state photo-induced electromotive force in semiconductors","authors":"A. Konin","doi":"10.1117/12.726369","DOIUrl":"https://doi.org/10.1117/12.726369","url":null,"abstract":"A theory of the non-steady-state photo-induced electromotive force in bipolar semiconductors accounting for the boundary conditions in a metal-semiconductor junction and distortion of energy bands near semiconductor surface is developed. It is shown that the surface potential can change essentially both the amplitude and the phase-frequency characteristic of the photo-induced electromotive force.","PeriodicalId":273853,"journal":{"name":"International Conference on Advanced Optical Materials and Devices","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123617595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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