{"title":"量子阱界面展宽效应","authors":"V. Gavryushin","doi":"10.1117/12.726499","DOIUrl":null,"url":null,"abstract":"We have derived and analyzed the wavefunctions and eigenstates for quantum wells (QW), broadened due to static interface disorder, within Discreet Variable Representation (DVR) approach of Colbert and Miller. The main advantage of this approach, which we have tested, is that it allows to obtain ab-initio and to analyze the shift and broadening of resonance states in a semiconductor quantum wells of different shapes. Calculations based on the convolution methods were used to include the influence of disorder to the formation of heterojunction interfaces.","PeriodicalId":273853,"journal":{"name":"International Conference on Advanced Optical Materials and Devices","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Quantum well interface broadening effects\",\"authors\":\"V. Gavryushin\",\"doi\":\"10.1117/12.726499\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have derived and analyzed the wavefunctions and eigenstates for quantum wells (QW), broadened due to static interface disorder, within Discreet Variable Representation (DVR) approach of Colbert and Miller. The main advantage of this approach, which we have tested, is that it allows to obtain ab-initio and to analyze the shift and broadening of resonance states in a semiconductor quantum wells of different shapes. Calculations based on the convolution methods were used to include the influence of disorder to the formation of heterojunction interfaces.\",\"PeriodicalId\":273853,\"journal\":{\"name\":\"International Conference on Advanced Optical Materials and Devices\",\"volume\":\"59 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-02-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Advanced Optical Materials and Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.726499\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Advanced Optical Materials and Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.726499","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We have derived and analyzed the wavefunctions and eigenstates for quantum wells (QW), broadened due to static interface disorder, within Discreet Variable Representation (DVR) approach of Colbert and Miller. The main advantage of this approach, which we have tested, is that it allows to obtain ab-initio and to analyze the shift and broadening of resonance states in a semiconductor quantum wells of different shapes. Calculations based on the convolution methods were used to include the influence of disorder to the formation of heterojunction interfaces.