掺硅GaAs/AlAs多量子阱中低能尾的形成

International Conference on Advanced Optical Materials and Devices Pub Date : 2006-02-19 DOI:10.1117/12.726489

A. Cerskus, Jurgis Kundrotas, G. Valušis, P. Harrison, S. Khanna, E. Linfield

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引用次数: 4

摘要

在这篇文章中，我们提出了高Si &dgr掺杂GaAs/AlAs多量子阱在液氮和室温下PL特性的研究结果。我们讨论了量子量子结构中载流子复合的可能机制，特别强调了PL光谱中低能尾的起源及其特征。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Formation of low energy tails in silicon &dgr;-doped GaAs/AlAs multiple quantum wells

In this article we present results of an investigation the PL properties of highly Si &dgr;-doped GaAs/AlAs multiple QWs at liquid nitrogen and room temperatures. We discuss possible mechanisms for carrier recombination in the QW structures placing particular emphasis on the origin of the low energy tail in the PL spectra, and its features.

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International Conference on Advanced Optical Materials and Devices

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