Proceedings of 8th International Conference on Indium Phosphide and Related Materials最新文献_第7页

Direct writing of gratings in GaInAs/GaInAsP quantum wells using pulsed laser irradiation 脉冲激光直接写入GaInAs/GaInAsP量子阱中的光栅

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492024

B. Ooi, E. L. Portnoi, C. J. McLean, A. McKee, C.C. Bunon, A. C. Bryce, Richard M. De La Rue, J. Marsh

{"title":"Direct writing of gratings in GaInAs/GaInAsP quantum wells using pulsed laser irradiation","authors":"B. Ooi, E. L. Portnoi, C. J. McLean, A. McKee, C.C. Bunon, A. C. Bryce, Richard M. De La Rue, J. Marsh","doi":"10.1109/ICIPRM.1996.492024","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492024","url":null,"abstract":"A new quantum well intermixing technique, which involves irradiating multiple quantum well material with high energy laser pulses and producing transient heating, has been developed. A Q-switched Nd:YAG laser with pulse length of /spl sim/7 ns, repetition rate of 10 Hz and pulse energy density /spl sim/5 mJ mm/sup -2/ is used to generate a localised increase in the density of point defects. After subsequent annealing in a rapid thermal processor bandgap shifts of over 100 nm were observed. The spatial resolution was investigated by masking the sample with a metal mask. Spatially resolved photoluminescence measurements showed that the resolution of the process was 25 /spl mu/m or better, this measurement being limited by the resolution of the photoluminescence set up. Gratings, with a pitch of 2.5 /spl mu/m, were wet-etched into the back of waveguide samples, and the samples were irradiated through the grating and annealed as before. Waveguide transmission spectra showed a dip in the transmitted intensity around a wavelength of 1.525 /spl mu/m indicating that a grating had been formed.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"239-241 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128515477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Single run etching and regrowth of InP/GaInAsP by GSMBE 用GSMBE对InP/GaInAsP进行一次蚀刻和再生

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492300

J. Gentner, P. Jarry, L. Goldstein

{"title":"Single run etching and regrowth of InP/GaInAsP by GSMBE","authors":"J. Gentner, P. Jarry, L. Goldstein","doi":"10.1109/ICIPRM.1996.492300","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492300","url":null,"abstract":"We report for the first time the successful etching of InP/GaInAsP heterostructures by the chemical beam etching technique using PCl/sub 3/, and on the combination of this etching technique with regrowth using standard GSMBE conditions. The kinetics of etching have been studied over a large temperature range. The difference in etch rates between InP and GaInAsP is explained by a difference in the group III chloride stoichiometry (InCl, GaCl/sub 3/). This difference leads probably to a modification of the surface composition during etching, the surface becoming richer in Ga. The dopants (Si, Be) are found to accumulate at the etch/regrown interface. The silicon atoms are not removed and create a /spl delta/-doped layer at the regrowth interface, The surface morphology of etched samples have been improved by etching at low temperature, in agreement with the RHEED observations showing a smooth 2D layer by layer etching mode in this case. In particular, the decoration of dislocations observed after etching at high temperature is not found on low temperature etched samples. This low temperature etching procedure is well adapted to the regrowth of high quality InP/GaInAsP structures.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116775494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Pd/Zn/Pd ohmic contact to p-InP Pd/Zn/Pd与p-InP的欧姆接触

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492051

M. Park, L.C. Wang, J.Y. Cheng, F. Deng, S. Lau, C. Palmstrøm

引用次数: 0

Surface passivation of InP-based In/sub 0.53/Ga/sub 0.47/As quantum wires using silicon interlayer-based passivation technique 基于硅层间钝化技术的inp基In/sub 0.53/Ga/sub 0.47/As量子线表面钝化

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492044

H. Fujikura, S. Kodama, H. Hasegawa

引用次数: 0

Use of halide transport in epitaxial growth of InP and related compounds 卤化物输运在铟磷及相关化合物外延生长中的应用

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492391

K. Somogyi

引用次数: 0

Carrier transport in an InGaAs(P)/InP all-optical switching structure InGaAs(P)/InP全光交换结构中的载流子传输

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492029

C. Knorr, U. Wilhelm, D. Ottenwlilder, E. Scholz, A. Hangleiter

引用次数: 0

Low-frequency noise in lattice-matched In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InP HEMTs 栅格匹配in /sub 0.52/Al/sub 0.48/As/ in /sub 0.53/Ga/sub 0.47/As/InP HEMTs中的低频噪声

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492258

L. Ren, M. Py, J. Spicher, H. Buehlmann, H. Beck, M. Ilegems

引用次数: 2

Influence of parasitic capacitances on the performance of passivated InAlAs/InGaAs HEMTs in the millimeter wave range 毫米波范围内寄生电容对钝化InAlAs/InGaAs hemt性能的影响

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492332

O. Schuler, H. Fourre, R. Fauquembergue, A. Cappy

{"title":"Influence of parasitic capacitances on the performance of passivated InAlAs/InGaAs HEMTs in the millimeter wave range","authors":"O. Schuler, H. Fourre, R. Fauquembergue, A. Cappy","doi":"10.1109/ICIPRM.1996.492332","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492332","url":null,"abstract":"High performance in the millimeter wave range have been already reported for InAlAs/InGaAs High Electron Mobility Transistors (HEMTs) on InP substrates. High frequency performance is essentially limited by two elements : the feedback capacitance Cgd and the gate resistance Rg. On the first hand, many different gate geometries such as T-gate or /spl Gamma/-gate have been developed to improve Rg. On the other hand, for operation stability and better reliability of MMIC's using HEMTs, devices must be coated with a dielectric layer. However, the passivation layer increases the parasitic capacitances and then, decreases the device performance. In this paper, we present a study of the influence of parasitic capacitances such as feedback capacitance on the high-frequency characteristics of InP-based HEMTs with T-gate supported by a Si/sub 3/N/sub 4/ passivation layer. Extraction of S-parameters from 1 to 40 GHz, and noise measurement at 94 GHz have been performed on 0.12-0.15 /spl mu/m gate length samples. First, we investigate the consequence of the cap layer underetch on the parasitic capacitances. Secondly, the effect of the dielectric coating layer under the top of the T-gate is examined.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126223067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

Shallow Si/Pd-based ohmic contacts to n type Al/sub 0.5/In/sub 0.5/P and Ga/sub 0.5/In/sub 0.5/P 浅Si/ pd基欧姆触点为n型Al/sub 0.5/In/sub 0.5/P和Ga/sub 0.5/In/sub 0.5/P

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492050

P. Hao, L.C. Wang, J. Chang, J. Kuo

引用次数: 0

Modulation characteristics of a DFB-laser with integrated spot-size converter for efficient laser fibre coupling 集成光斑尺寸变换器的dfb激光器的调制特性

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492262

R. Zengerle, B. Hubner, C. Gréus, H. Burkhard, R. Ries, H. Janning, E. Kuphal

引用次数: 0