浅Si/ pd基欧姆触点为n型Al/sub 0.5/In/sub 0.5/P和Ga/sub 0.5/In/sub 0.5/P

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.492050

P. Hao, L.C. Wang, J. Chang, J. Kuo

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引用次数: 0

摘要

基于固相再生(SPR)原理的Si/ pd基触点方案，与气源分子束外延(GSMBE)生长的GaAs相匹配的n型Al/sub 0.5/In/sub 0.5/P和Ga/sub 0.5/In/sub 0.5/P晶格形成低电阻欧姆触点。在Al/sub 0.5/In/sub 0.5/P和Ga/sub 0.5/In/sub 0.5/P上分别获得了/spl sim/6/spl times/10/sup -6/ /spl Omega/-cm/sup 2/和/spl sim/1/spl times/10/sup -5/ /spl Omega/-cm/sup 2/的最低接触电阻率(均掺杂到/spl sim/2/spl times/10/sup 18/ cm/sup -3/)。本文介绍了n-Al/sub 0.5/In/sub 0.5/P和n-Ga/sub 0.5/In/sub 0.5/P的Si/ pd基触点的电学特性和欧姆触点形成模型。

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Shallow Si/Pd-based ohmic contacts to n type Al/sub 0.5/In/sub 0.5/P and Ga/sub 0.5/In/sub 0.5/P

Si/Pd-based contact schemes based on the solid phase regrowth (SPR) principle have been developed to form low resistance ohmic contacts to n type Al/sub 0.5/In/sub 0.5/P and Ga/sub 0.5/In/sub 0.5/P lattice matched to GaAs grown by gas source molecular beam epitaxy (GSMBE). Lowest contact resistivities of /spl sim/6/spl times/10/sup -6/ /spl Omega/-cm/sup 2/ and /spl sim/1/spl times/10/sup -5/ /spl Omega/-cm/sup 2/ have been obtained on Al/sub 0.5/In/sub 0.5/P and Ga/sub 0.5/In/sub 0.5/P respectively (both doped to /spl sim/2/spl times/10/sup 18/ cm/sup -3/). In this article, the electrical properties and the ohmic contact formation model of the Si/Pd-based contacts to n-Al/sub 0.5/In/sub 0.5/P and n-Ga/sub 0.5/In/sub 0.5/P are presented.

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Proceedings of 8th International Conference on Indium Phosphide and Related Materials

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