栅格匹配in /sub 0.52/Al/sub 0.48/As/ in /sub 0.53/Ga/sub 0.47/As/InP HEMTs中的低频噪声

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.492258

L. Ren, M. Py, J. Spicher, H. Buehlmann, H. Beck, M. Ilegems

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引用次数: 2

摘要

研究了晶格匹配InAlAs/InGaAs/InP hemt在77 ~ 350 K低漏极偏置条件下的低频漏极电流噪声。发现1/f噪声强烈依赖于栅极源偏置，这可以通过考虑串联电阻所起的作用来解释。提取1/f噪声的Hooge参数为InGaAs通道的1.5/spl倍/10/sup -3/和串电阻的7/spl倍/10/sup -4/。噪声谱分析显示了两种生成复合(G-R)噪声分量，对应于两个活化能分别为0.56 eV和0.11 eV的陷阱。考虑到它们对栅极源偏置的不同行为和dlt结果，我们得出结论，0.11 eV的陷阱位于通道区域，而0.56 eV的陷阱最有可能位于肖特基势垒层。

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Low-frequency noise in lattice-matched In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InP HEMTs

Low-frequency drain-current noise in lattice-matched InAlAs/InGaAs/InP HEMTs has been studied at low drain bias in a temperature range of 77 to 350 K. The 1/f noise was found to be strongly dependent on gate-source bias, which can be interpreted by taking into account the role played by the series resistance. The Hooge's parameters for 1/f noise were extracted to be 1.5/spl times/10/sup -3/ for the InGaAs channel and 7/spl times/10/sup -4/ for the series resistance. Noise spectra analysis reveals two generation-recombination (G-R) noise components, which correspond to two traps with activation energies of 0.56 eV and 0.11 eV. Considering their different behavior upon gate-source bias and the DLTS results, we conclude that the 0.11 eV trap is located in the channel region while the 0.56 eV trap is most likely located in the Schottky barrier layer.

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Proceedings of 8th International Conference on Indium Phosphide and Related Materials

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