2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)最新文献

{"title":"Fabrication of SAW device by using Zno thin film as a sensing area","authors":"S. L. Lai, M. Zakaria, U. Hashim, K. L. Foo, R. Prasad","doi":"10.1109/SMELEC.2014.6920877","DOIUrl":"https://doi.org/10.1109/SMELEC.2014.6920877","url":null,"abstract":"The limitation of human five main senses to detect the Nano-scale organism has introduced the idea for researcher in development several kinds of devices or sensors. The Surface Acoustic Wave (SAW) devices which wisely use in telecommunication field at the early time had been integrated into biosensor which able to detect the microorganism in aqueous state. Typically, a SAW sensor will have three elements which are transducers, sensing area and electronic signal processor. Zinc Oxide (ZnO) thin film use as piezoelectric substrate while metallic material as Inter Digital Transduces (IDTs). The new device structure which replaces the sensing area by using ZnO metal oxide layer is conducted in this study. Hence, the purpose is to investigate the behavior of various sizes of ZnO metal oxide layer as sensing area for the SAW device. Conventional lithography and Therefore, ZnO thin film layer by Sol-gel method is applicable use as SAW device. ZnO Sol-gel coating method were used to fabricate the SAW device. The SAW device with ZnO metal oxide layer shows the attractive result. The electrical characteristic and frequency response were used to assess the behaviour of the SAW device. X-ray Diffraction (XRD) and Atomic Force Microscope (AFM) was used to evaluate the ZnO structures.","PeriodicalId":268203,"journal":{"name":"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128658120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Discrete event simulation modeling for semiconductor fabrication operation","authors":"M. A. Chik, A. Rahim, A. Z. M. Rejab, K. Ibrahim, U. Hashim","doi":"10.1109/SMELEC.2014.6920863","DOIUrl":"https://doi.org/10.1109/SMELEC.2014.6920863","url":null,"abstract":"This research is to investigate simulation modeling method for semiconductor fabrication factories (FAB) that known for complex manufacturing operation from various the literatures. This paper covers literatures from various publications since past 10 years. The significant simulation model used in common and semiconductor fabrication will be selected for evaluation in semiconductor fabrication manufacturing operation scenario with high mixed. Depends to the products mixed configuration, cycle time to complete semiconductor fabrication will take 60 to 90 days. The longer period needed due to wafer process required 300 to 1000 steps, process re-entrance to similar equipment more than 30% of the total steps further increase the complexity with many configuration due to setup changes. The simulation also needs to configure for process queue time, process dedication, several of difference for equipment configuration, capability and capacity. Primary simulation techniques reviewed in this analysis are discrete event, petri-net, gaming, virtual, intelligent, monte carlo and hybrid to understand individual strength and common usage in the market. This research summarized the highest usage, most uses and compatibility in similar operation for semiconductor fabrication. In summary, the research concluded DES is the most suitable technique for simulating FAB operation because of its nature of queuing and leaving concept that fits and resulted to 95% accuracy for WIP forecasting.","PeriodicalId":268203,"journal":{"name":"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133027520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Preparation and characterization of MWCNT dispersed in various solutions","authors":"M. A. Farehanim, U. Hashim, S. Norhafiezah, M. F. Fatin, R. Ayub, N. Soin, F. Ibrahim","doi":"10.1109/SMELEC.2014.6920909","DOIUrl":"https://doi.org/10.1109/SMELEC.2014.6920909","url":null,"abstract":"In modern technology of biomedical applications, the potential of carbon nanotubes based materials has been widely used in recent years. In this paper, the preparation of the multi wall carbon nanotube (MWCNT) with biocompatibility of these composite are investigated, although many aspects have been studied separately by researchers. We have chosen three different solvents; namely chitosan, Sodium Dodecyl Sulfate (SDS), and isopropyl alcohol (IPA) to mix with MWCNT respectively. This functionalized CNT with carboxylic (COOH) groups were prepared in three different liquid forms and further will be dropped on fabricated Interdigitated electrodes (IDEs) as devices. Scanning electron microscopy (SEM) was used to identify the structures effect of synthesized MWCNT in different solvents. The conductivities show the ability of chitosan and SDS to be used as a solvent in order to synthesis MWCNTs and further will be used as a biosensor.","PeriodicalId":268203,"journal":{"name":"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133450963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"2.4GHz WLAN RF energy harvester for passive indoor sensor nodes","authors":"F. Alneyadi, Maitha AlKaabi, Salama Alketbi, Shamsa Hajraf, R. Ramzan","doi":"10.1109/SMELEC.2014.6920900","DOIUrl":"https://doi.org/10.1109/SMELEC.2014.6920900","url":null,"abstract":"This paper presents the design and measurement results of an RF Energy Harvester aimed to power sensor nodes like temperature, humidity, chemical, or radiation in an indoor industrial or residential environment. The harvester operates at 2.42 GHz WiFi-WLAN frequency band. It consists of multiple microstrip patch antennas, power combiner, voltage quadruple Greinacher rectifier circuit, and a super capacitor to store the harvested energy. All elements are designed using low-loss Rogers RO3206 substrate. The impedance matching of the power combiner with a rectifier is a non-trivial issue due to change in diode impedance with the input power. The peak efficiency is measured to be 57.8% at 6 to 8dBm input power. In the presence of realistic -10dBm continuous signal, the system can charge a 33mF super capacitor to 1.6V in 20 minutes. This collected energy is enough to power 10mW sensor node for a period of more than 4 seconds to perform wake up, sense and transmit functions, and put a sensor back to sleep mode.","PeriodicalId":268203,"journal":{"name":"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133492864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Parametric analysis of boost converter for energy harvesting using piezoelectric for micro devices","authors":"Shafii A. Wahab, M. S. Bhuyan, J. Sampe, S. Ali","doi":"10.1109/SMELEC.2014.6920914","DOIUrl":"https://doi.org/10.1109/SMELEC.2014.6920914","url":null,"abstract":"Lower amount of power delivered from piezoelectric based ambient vibration energy harvester devices is a barrier to adopt the technology for different applications. Energy harvesting circuitry can enhance power output to provide a regulated DC supply to the end application. In this paper, various circuit simulations are carried out to investigate output power enhancement. A parametric analysis of a boost circuit simulation using Cadence OrCAD Capture PSpice software with input less than 1 V is carried out to find the optimum parameters including, the switching frequency rise and fall times, duty cycle, inductance and load capacitance value. Simulation results show that passive component based boost converter can significantly increase the voltage output of an ambient vibration based energy harvester. The output voltage increases linearly with the increase of single supply voltage input range 0.1 V to 0.5 V, to the output voltage range of 7 to 35 V. The optimum parameter found for 10 kΩ load is 100 μH inductor and 1μF load capacitor. A comparison of output performance of the boost circuit with existing literature is presented. The ease of the boost converter circuit will facilitate the development of an efficient piezoelectric energy harvesters for low power applications like automotive, healthcare portable devices, and wireless sensor networks.","PeriodicalId":268203,"journal":{"name":"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133548477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Correlation between the microstructure of copper oxide thin film and its gas sensing response","authors":"J. W. Low, N. Nayan, M. Z. Sahdan, M. K. Ahmad, A. Shakaff, A. Zakaria, A. Zain","doi":"10.1109/SMELEC.2014.6920788","DOIUrl":"https://doi.org/10.1109/SMELEC.2014.6920788","url":null,"abstract":"Copper oxide gas sensor was prepared on silicon wafer by sputtering of copper target at different oxygen flow rate of 0, 4, 8 and 16 sccm using RF magnetron sputtering technique. Argon flow rate, RF power, working pressure and substrate bias voltage were fixed at 50 sccm, 400 W, 22.5 mTorr and -40 V, respectively. The effect of varying the oxygen flow rate towards the time response of the copper oxide gas sensor was investigated. In addition, the influence of the copper oxide thin films microstructure and I-V characteristic was also considered. Based on the result, copper oxide gas sensor fabricated at 8 sccm of oxygen flow rate provide a better response of 0.024V/s compare to those fabricated at 0, 4 and 16 sccm.","PeriodicalId":268203,"journal":{"name":"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116116586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Characterization of MEMS structure on silicon wafer using KrF excimer laser micromachining","authors":"M. Mazalan, S. Johari, B. Ng, Y. Wahab","doi":"10.1109/SMELEC.2014.6920835","DOIUrl":"https://doi.org/10.1109/SMELEC.2014.6920835","url":null,"abstract":"This paper presents preliminary parametric studies of KrF laser micromachining ablation effects on Silicon. Four parameters are studied, namely laser energy, pulse rate, number of laser pulses, and Rectangular Variable Aperture (RVA) in X and Y direction. At present, the study is focused on the production of microchannels using laser micromachine, in which its dimension is examined and measured. We found that the number of laser pulse is non-linearly proportional with the ablated channel width, with the etching rate of approximately 1 to 5 um for 50 laser pulses. This is similar with the measured depth of the microchannel. The changes in the measured channel width are most significant when the laser energy is increased. Some debris and recast can also be observed around the edge of the microchannel particularly during the variation of the laser pulse frequency. When varying the RVA, it is observed that the surfaces of the ablated microchannels are not smooth with a lot of debris accumulated at the channel edge and a few discolorations. Finally, a microcantilever structure is fabricated with the aim of demonstrating the capability of the laser micromachine.","PeriodicalId":268203,"journal":{"name":"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122104814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High quality Ge epitaxial films grown on In0.51Ga0.49P/GaAs and GaAs substrates by ultra high vacuum chemical deposition","authors":"Y. Su, Shih-Hsuan Tang, C. Nguyen, Ching-Wen Kuan, H. Yu, E. Chang","doi":"10.1109/SMELEC.2014.6920908","DOIUrl":"https://doi.org/10.1109/SMELEC.2014.6920908","url":null,"abstract":"The epitaxial growth of high quality Ge thin films on different materials of In_0.51Ga_0.49P and GaAs by ultra high vacuum chemical vapor deposition (UHVCVD) system was studied. The crystallinity of high quality Ge layers on In_0.51Ga_0.49P and GaAs layers can be proved by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The comparison of surface morphology between Ge grown on In_0.51Ga_0.49P and GaAs was also analyzed by atomic force microscopy (AFM). The roughness of Ge on GaAs shows better than that of In_0.51Ga_0.49P. Both of these structures were designed for fabricating p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) for the integration of Ge p-channel device with III-V n-channel electronic device.","PeriodicalId":268203,"journal":{"name":"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123448593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Shear horizontal surface acoustic wave COMSOL modeling on lithium niobate piezoelectric substrate","authors":"U. Hashim, W. Liu, K. L. Foo, C. Voon, H. Hisham, T. Nazwa, S. T. Ten, A. Sudin, M. S. Nur Humaira","doi":"10.1109/SMELEC.2014.6920806","DOIUrl":"https://doi.org/10.1109/SMELEC.2014.6920806","url":null,"abstract":"Shear horizontal surface acoustic wave (SHSAW), one type of the Surface Acoustic Wave is most suitable for the liquid based application as SHSAW has the advantage of acoustic energy is not being radiated into liquid. Hence, SHSAW device has the potential to provide high-performance sensing platform in pathogen sensing research. Since 1960, there have been a lot of complicated theoretical models for the SAW devices development, such as from delta function model, equivalent circuit model, coupling-of-modes (COM) model, P-matrix model and Computer Simulation Technology Studio Suite (CST), finite element analysis (FEA) model. Unfortunately, these models have been developed more toward telecommunication application such as signal filters and resonators. However, SHSAW device development in this research is not meant for signal filter or resonators but used for surface sensing purpose through mass loading effects detection, therefore COMSOL Multiphysics was used to modeling the SHSAW for pathogen sensing development. Three resonant frequencies of 15 μm, 20 μm and 25 μm width electrodes were simulated in this paper as preliminary evaluation of the applicable of COMSOL Multiphysics in SHSAW research. The comparison has shown that the difference between theoretical calculation and simulation result is less than 10%.","PeriodicalId":268203,"journal":{"name":"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123455750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"There is plenty of room at the silicon","authors":"Y. Park","doi":"10.1109/SMELEC.2014.6920775","DOIUrl":"https://doi.org/10.1109/SMELEC.2014.6920775","url":null,"abstract":"Summary form only given. As the silicon technology is scaled down to sub. 10nm and most advanced chips are fabricated mostly in the industry, silicon related researches draw less attention from young researchers. Rather, academia researches on electronics are shifted to exploring new materials such as graphene, 2D metal oxide and carbon nanotube. However, there is plenty of room at the Silicon. The `plenty of room' implies more than the `more than Moore' paradigm, where the silicon chip technology is expanded to applications such as photonics, bio sensing, MEMS, etc. Rather, the `plenty of room' paradigm implies that the operational principles of silicon devices are applied (rather than simple integration) to expanding the capability of the `more than Moore' and even `beyond the Moore' paradigm. As examples of the new paradigm, we present three examples developed at Seoul National University. Firstly, the electron tunneling phenomenon from silicon to gate through gate insulator is used as means of injecting electrons to water solution(water solution is gate in this case). In this way, well controlled electrons in terms of numbers and energies can be supplied to water to understand and control the surface chemistry at the water-solid interface [1]. Secondly, well known electronic feedback taken place in the bipolar transistor under the BVceo condition is applied to the UVLED based spectroscopy. With an electron detouring from the PD(Photo detector diode) to the photo generation at the PD junction by way of LED, the `bipolar like snap back' in the current voltage characteristics of the PD can be obtained by the impact ionization feedback. As the BVceo is critically sensitive to the transistor α, the PD snap back is sensitive to the detouring path, where the light from LED is absorbed by the molecules before arriving at the PD junction. Using the system, orders of magnitude enhancement in the sensitivity has been obtained for the detection of the (contaminating) molecules in the water. In the third example, the pulse technique is applied between the electrical channel and water solution to alleviate the signal degradation from the bio molecules due to the charge screening effect, which is similar to the technique used in the CCD(Charge Coupled Device) to transfer the electrons from the optical excitation[2]. We are applying the pulse technique to sensing the DNA as the biomarker of the Denge virus in collaboration with the IMEN(Institute of Microengineering and Nanoelectronics of Malaysia. With the experiences, we propose that the `plenty of room at the silicon' paradigm to maximally utilize the benefit of the silicon technology.","PeriodicalId":268203,"journal":{"name":"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122396065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}