Y. Su, Shih-Hsuan Tang, C. Nguyen, Ching-Wen Kuan, H. Yu, E. Chang
{"title":"采用超高真空化学沉积法在In0.51Ga0.49P/GaAs和GaAs衬底上生长出高质量的锗外延薄膜","authors":"Y. Su, Shih-Hsuan Tang, C. Nguyen, Ching-Wen Kuan, H. Yu, E. Chang","doi":"10.1109/SMELEC.2014.6920908","DOIUrl":null,"url":null,"abstract":"The epitaxial growth of high quality Ge thin films on different materials of In<sub>0.51</sub>Ga<sub>0.49</sub>P and GaAs by ultra high vacuum chemical vapor deposition (UHVCVD) system was studied. The crystallinity of high quality Ge layers on In<sub>0.51</sub>Ga<sub>0.49</sub>P and GaAs layers can be proved by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The comparison of surface morphology between Ge grown on In<sub>0.51</sub>Ga<sub>0.49</sub>P and GaAs was also analyzed by atomic force microscopy (AFM). The roughness of Ge on GaAs shows better than that of In<sub>0.51</sub>Ga<sub>0.49</sub>P. Both of these structures were designed for fabricating p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) for the integration of Ge p-channel device with III-V n-channel electronic device.","PeriodicalId":268203,"journal":{"name":"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High quality Ge epitaxial films grown on In0.51Ga0.49P/GaAs and GaAs substrates by ultra high vacuum chemical deposition\",\"authors\":\"Y. Su, Shih-Hsuan Tang, C. Nguyen, Ching-Wen Kuan, H. Yu, E. Chang\",\"doi\":\"10.1109/SMELEC.2014.6920908\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The epitaxial growth of high quality Ge thin films on different materials of In<sub>0.51</sub>Ga<sub>0.49</sub>P and GaAs by ultra high vacuum chemical vapor deposition (UHVCVD) system was studied. The crystallinity of high quality Ge layers on In<sub>0.51</sub>Ga<sub>0.49</sub>P and GaAs layers can be proved by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The comparison of surface morphology between Ge grown on In<sub>0.51</sub>Ga<sub>0.49</sub>P and GaAs was also analyzed by atomic force microscopy (AFM). The roughness of Ge on GaAs shows better than that of In<sub>0.51</sub>Ga<sub>0.49</sub>P. Both of these structures were designed for fabricating p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) for the integration of Ge p-channel device with III-V n-channel electronic device.\",\"PeriodicalId\":268203,\"journal\":{\"name\":\"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)\",\"volume\":\"102 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMELEC.2014.6920908\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2014.6920908","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High quality Ge epitaxial films grown on In0.51Ga0.49P/GaAs and GaAs substrates by ultra high vacuum chemical deposition
The epitaxial growth of high quality Ge thin films on different materials of In0.51Ga0.49P and GaAs by ultra high vacuum chemical vapor deposition (UHVCVD) system was studied. The crystallinity of high quality Ge layers on In0.51Ga0.49P and GaAs layers can be proved by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The comparison of surface morphology between Ge grown on In0.51Ga0.49P and GaAs was also analyzed by atomic force microscopy (AFM). The roughness of Ge on GaAs shows better than that of In0.51Ga0.49P. Both of these structures were designed for fabricating p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) for the integration of Ge p-channel device with III-V n-channel electronic device.
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