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2011 3rd IEEE International Memory Workshop (IMW)最新文献

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Demonstration of CAM and TCAM Using Phase Change Devices 用相变装置演示CAM和TCAM
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873229
B. Rajendran, R. Cheek, L. Lastras, M. Franceschini, M. Breitwisch, A. Schrott, Jing Li, R. Montoye, Leland Chang, Chung Lam
{"title":"Demonstration of CAM and TCAM Using Phase Change Devices","authors":"B. Rajendran, R. Cheek, L. Lastras, M. Franceschini, M. Breitwisch, A. Schrott, Jing Li, R. Montoye, Leland Chang, Chung Lam","doi":"10.1109/IMW.2011.5873229","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873229","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133983732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 30
A Novel 3D Cell Array Architecture for Terra-Bit NAND Flash Memory 一种用于Terra-Bit NAND快闪记忆体的新型3D单元阵列架构
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873207
Eun-seok Choi, Hyunseung Yoo, H. Joo, G. Cho, Sung-Kye Park, S. Lee
{"title":"A Novel 3D Cell Array Architecture for Terra-Bit NAND Flash Memory","authors":"Eun-seok Choi, Hyunseung Yoo, H. Joo, G. Cho, Sung-Kye Park, S. Lee","doi":"10.1109/IMW.2011.5873207","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873207","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130448034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
25nm 64Gb 130mm² 3bpc NAND Flash Memory 25nm 64Gb 130mm²3bpc NAND闪存
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873197
M. Goldman, K. Pangal, G. Naso, A. Goda
{"title":"25nm 64Gb 130mm² 3bpc NAND Flash Memory","authors":"M. Goldman, K. Pangal, G. Naso, A. Goda","doi":"10.1109/IMW.2011.5873197","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873197","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133147057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
The Operation Algorithm for Improving the Reliability of TLC (Triple Level Cell) NAND Flash Characteristics 提高TLC (Triple Level Cell) NAND闪存特性可靠性的运算算法
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873234
Dong Wook Lee, Sung-Soon Cho, B. Kang, Sukkwang Park, Byoungjun Park, M. Cho, K. Ahn, Y. Yang, Sung Wook Park
{"title":"The Operation Algorithm for Improving the Reliability of TLC (Triple Level Cell) NAND Flash Characteristics","authors":"Dong Wook Lee, Sung-Soon Cho, B. Kang, Sukkwang Park, Byoungjun Park, M. Cho, K. Ahn, Y. Yang, Sung Wook Park","doi":"10.1109/IMW.2011.5873234","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873234","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131723306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
A High Performance and Low Power Logic CMOS Compatible Embedded 1Mb CBRAM Non-Volatile Macro 一种高性能低功耗CMOS兼容嵌入式1Mb CBRAM非易失性宏
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873221
S. Hollmer, N. Gilbert, J. Dinh, D. Lewis, N. Derhacobian
{"title":"A High Performance and Low Power Logic CMOS Compatible Embedded 1Mb CBRAM Non-Volatile Macro","authors":"S. Hollmer, N. Gilbert, J. Dinh, D. Lewis, N. Derhacobian","doi":"10.1109/IMW.2011.5873221","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873221","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124779820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
New Read Scheme of Variable Vpass-Read for Dual Control Gate with Surrounding Floating Gate (DC-SF) NAND Flash Cell 围绕浮动门(DC-SF) NAND闪存单元的双控制门可变vpass读取新方案
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873206
Hyunseung Yoo, Eun-seok Choi, H. Joo, G. Cho, Sungkye Park, S. Aritome, Seokkiu Lee, Sungjoo Hong
{"title":"New Read Scheme of Variable Vpass-Read for Dual Control Gate with Surrounding Floating Gate (DC-SF) NAND Flash Cell","authors":"Hyunseung Yoo, Eun-seok Choi, H. Joo, G. Cho, Sungkye Park, S. Aritome, Seokkiu Lee, Sungjoo Hong","doi":"10.1109/IMW.2011.5873206","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873206","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122741672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Recent Progress of Phase Change Memory (PCM) and Resistive Switching Random Access Memory (RRAM) 相变存储器(PCM)和阻性开关随机存取存储器(RRAM)的研究进展
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873188
H. Wong, Sangbum Kim, Byoungil Lee, Marissa Caldwell, Jiale Liang, Yi Wu, R. Jeyasingh, Shimeng Yu
{"title":"Recent Progress of Phase Change Memory (PCM) and Resistive Switching Random Access Memory (RRAM)","authors":"H. Wong, Sangbum Kim, Byoungil Lee, Marissa Caldwell, Jiale Liang, Yi Wu, R. Jeyasingh, Shimeng Yu","doi":"10.1109/IMW.2011.5873188","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873188","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116975340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Nonvolatile Configuration Memory Cell for Low Power Field Programmable Gate Array 用于低功耗现场可编程门阵列的非易失配置存储器单元
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873238
S. Yasuda, K. Ikegami, T. Tanamoto, A. Kinoshita, K. Abe, S. Fujita
{"title":"Nonvolatile Configuration Memory Cell for Low Power Field Programmable Gate Array","authors":"S. Yasuda, K. Ikegami, T. Tanamoto, A. Kinoshita, K. Abe, S. Fujita","doi":"10.1109/IMW.2011.5873238","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873238","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115505421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Embedded Non Volatile Memory Markets on the Rise 嵌入式非易失性存储器市场正在崛起
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873196
A. Niebel
{"title":"Embedded Non Volatile Memory Markets on the Rise","authors":"A. Niebel","doi":"10.1109/IMW.2011.5873196","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873196","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130305486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Advanced Capacitor Dielectrics: Towards 2x nm DRAM 先进电容介质:迈向2nm DRAM
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873203
M.-S. Kim, M. Popovici, J. Swerts, M. Pawlak, K. Tomida, B. Kaczer, K. Opsomer, M. Schaekers, H. Tielens, C. Vrancken, S. Van Elshocht, I. Debusschere, L. Altimime, J. Kittl
{"title":"Advanced Capacitor Dielectrics: Towards 2x nm DRAM","authors":"M.-S. Kim, M. Popovici, J. Swerts, M. Pawlak, K. Tomida, B. Kaczer, K. Opsomer, M. Schaekers, H. Tielens, C. Vrancken, S. Van Elshocht, I. Debusschere, L. Altimime, J. Kittl","doi":"10.1109/IMW.2011.5873203","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873203","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130041630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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