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2011 3rd IEEE International Memory Workshop (IMW)最新文献

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Temperature Robust Phase Change Memory Using Quaternary Material System Based on Ga2TeSb7 基于Ga2TeSb7的四元材料体系温度鲁棒相变存储器
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873240
A. Chuang, Yi-Chou Chen, Y. Chu, P. Chang, K. Kao, Chih Chang, K. Hsieh, T. Chin, Chih-Yuan Lu
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引用次数: 0
Resistive Switching Driven by Electric Field in the Mott Insulators AM4X8 (A = Ga, Ge; M= V, Nb, Ta; X = S, Se): Towards a New Class of Non-Volatile RRAM Memory Mott绝缘子AM4X8的电场驱动电阻开关(A = Ga, Ge)M= V, Nb, Ta;X = S, Se):迈向一类新的非易失性RRAM存储器
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873220
E. Souchier, C. Vâju, V. Guiot, B. Corraze, E. Janod, J. Tranchant, P. Mazoyer, M. Besland, L. Cario
{"title":"Resistive Switching Driven by Electric Field in the Mott Insulators AM4X8 (A = Ga, Ge; M= V, Nb, Ta; X = S, Se): Towards a New Class of Non-Volatile RRAM Memory","authors":"E. Souchier, C. Vâju, V. Guiot, B. Corraze, E. Janod, J. Tranchant, P. Mazoyer, M. Besland, L. Cario","doi":"10.1109/IMW.2011.5873220","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873220","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125874529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Electrical Performances of Tellurium-Rich GexTe1-x Phase Change Memories 富碲GexTe1-x相变存储器的电学性能
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873232
G. Navarro, N. Pashkov, M. Suri, P. Zuliani, R. Annunziata, V. Sousa, L. Perniola, S. Maitrejean, A. Persico, A. Roule, A. Toffoli, B. De Salvo
{"title":"Electrical Performances of Tellurium-Rich GexTe1-x Phase Change Memories","authors":"G. Navarro, N. Pashkov, M. Suri, P. Zuliani, R. Annunziata, V. Sousa, L. Perniola, S. Maitrejean, A. Persico, A. Roule, A. Toffoli, B. De Salvo","doi":"10.1109/IMW.2011.5873232","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873232","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124096012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Endurance Prediction of Scaled NAND Flash Memory Based on Spatial Mapping of Erase Tunneling Current 基于擦除隧道电流空间映射的缩放NAND闪存寿命预测
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873215
A. Fayrushin, Changhyun Lee, Young-woo Park, Jungdal Choi, Jeong-Dong Choi, C. Chung
{"title":"Endurance Prediction of Scaled NAND Flash Memory Based on Spatial Mapping of Erase Tunneling Current","authors":"A. Fayrushin, Changhyun Lee, Young-woo Park, Jungdal Choi, Jeong-Dong Choi, C. Chung","doi":"10.1109/IMW.2011.5873215","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873215","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133121449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
32nm Embedded DRAM Reaching 400MHz and 0.1mm²/Mb on a Low Cost and Low Power Process 低成本低功耗32nm嵌入式DRAM达到400MHz和0.1mm²/Mb
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873202
M. Vernet, O. Jeantet, A. Parashar, H. Degoirat, P. K. Verma, S. K. Yadav, K. Chawla, M. Atif, T. Handa, S. Sharad, G. P. Penaka, R. Kundu, S. Nantet, S. Cremer, O. Goducheau
{"title":"32nm Embedded DRAM Reaching 400MHz and 0.1mm²/Mb on a Low Cost and Low Power Process","authors":"M. Vernet, O. Jeantet, A. Parashar, H. Degoirat, P. K. Verma, S. K. Yadav, K. Chawla, M. Atif, T. Handa, S. Sharad, G. P. Penaka, R. Kundu, S. Nantet, S. Cremer, O. Goducheau","doi":"10.1109/IMW.2011.5873202","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873202","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"246 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132027515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Observation and Effective Suppression of Dielectric Relaxation in Charge-Trap NAND Flash Memory 电荷阱NAND闪存中介电弛豫的观察与有效抑制
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873237
J. Sim, Jungdal Choi, Chang-seok Kang, Young-woo Park, Jintaek Park, Jeong-Hyuk Choi, C. Chung
{"title":"Observation and Effective Suppression of Dielectric Relaxation in Charge-Trap NAND Flash Memory","authors":"J. Sim, Jungdal Choi, Chang-seok Kang, Young-woo Park, Jintaek Park, Jeong-Hyuk Choi, C. Chung","doi":"10.1109/IMW.2011.5873237","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873237","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115075922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Switching by Ni Filaments in a HfO2 Matrix: A New Pathway to Improved Unipolar Switching RRAM HfO2基体中Ni丝的开关:改进单极开关RRAM的新途径
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873223
Y. Chen, G. Pourtois, X. Wang, C. Adelmann, L. Goux, B. Govoreanu, L. Pantisano, S. Kubicek, L. Altimime, M. Jurczak, J. Kittl, G. Groeseneken, D. Wouters
{"title":"Switching by Ni Filaments in a HfO2 Matrix: A New Pathway to Improved Unipolar Switching RRAM","authors":"Y. Chen, G. Pourtois, X. Wang, C. Adelmann, L. Goux, B. Govoreanu, L. Pantisano, S. Kubicek, L. Altimime, M. Jurczak, J. Kittl, G. Groeseneken, D. Wouters","doi":"10.1109/IMW.2011.5873223","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873223","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130216037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
A New Compact SRAM Cell by Vertical MOSFET for Low-Power and Stable Operation 基于垂直MOSFET的低功耗稳定SRAM单元
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873204
H. Na, T. Endoh
{"title":"A New Compact SRAM Cell by Vertical MOSFET for Low-Power and Stable Operation","authors":"H. Na, T. Endoh","doi":"10.1109/IMW.2011.5873204","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873204","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129920117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Highly Reliable B4-Flash Technology for High Density Embedded NVM Application 用于高密度嵌入式NVM应用的高可靠B4-Flash技术
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873185
N. Ajika, S. Shukuri, S. Shimizu, T. Ogura, M. Mihara, K. Kobayashi, M. Nakashima
{"title":"Highly Reliable B4-Flash Technology for High Density Embedded NVM Application","authors":"N. Ajika, S. Shukuri, S. Shimizu, T. Ogura, M. Mihara, K. Kobayashi, M. Nakashima","doi":"10.1109/IMW.2011.5873185","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873185","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"213 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115059709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A Novel 3-D Vertical FG NAND Flash Memory Cell Arrays Using the Separated Sidewall Control Gate (S-SCG) for Highly Reliable MLC Operation 采用分离侧壁控制门(S-SCG)实现高可靠MLC操作的新型三维垂直FG NAND闪存单元阵列
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873208
M. Seo, Bong-Hoon Lee, Sung-Kye Park, T. Endoh
{"title":"A Novel 3-D Vertical FG NAND Flash Memory Cell Arrays Using the Separated Sidewall Control Gate (S-SCG) for Highly Reliable MLC Operation","authors":"M. Seo, Bong-Hoon Lee, Sung-Kye Park, T. Endoh","doi":"10.1109/IMW.2011.5873208","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873208","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120999823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
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