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2011 3rd IEEE International Memory Workshop (IMW)最新文献

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Direct Measurement of Trap Spacing in Phase Change Memory Cells Using ATE Devices 利用ATE器件直接测量相变存储单元中的陷阱间距
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873228
R. Jeyasingh, D. Kuzum, H. Wong
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引用次数: 1
A New Cell-to-Cell Interference Induced by Conduction Band Distortion near S/D Region in Scaled NAND Flash Memories 缩放NAND闪存中近S/D区传导带畸变引起的一种新的细胞间干扰
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873199
Byungkyu Cho, Changhyun Lee, K. Seol, S. Hur, Jungdal Choi, Jeong-Dong Choi, C. Chung
{"title":"A New Cell-to-Cell Interference Induced by Conduction Band Distortion near S/D Region in Scaled NAND Flash Memories","authors":"Byungkyu Cho, Changhyun Lee, K. Seol, S. Hur, Jungdal Choi, Jeong-Dong Choi, C. Chung","doi":"10.1109/IMW.2011.5873199","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873199","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128797332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
0.5V Bit-Line-Voltage Self-Boost-Programming in Ferroelectric-NAND Flash Memory 铁电nand闪存中0.5V位线电压自升压编程
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873233
Xizhen Zhang, K. Miyaji, Mitsue Takahashi, K. Takeuchi, S. Sakai
{"title":"0.5V Bit-Line-Voltage Self-Boost-Programming in Ferroelectric-NAND Flash Memory","authors":"Xizhen Zhang, K. Miyaji, Mitsue Takahashi, K. Takeuchi, S. Sakai","doi":"10.1109/IMW.2011.5873233","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873233","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"29 9","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120872494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Novel Bi-Layer Poly-Silicon Channel Vertical Flash Cell for Ultrahigh Density 3D SONOS NAND Technology 用于超高密度3D SONOS NAND技术的新型双层多晶硅通道垂直闪存单元
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873209
G. Kar, G. Van den bosch, A. Cacciato, P. Blomme, S. Van Aerde, A. Arreghini, L. Breuil, A. De Keersgieter, V. Paraschiv, C. Vrancken, B. Douhard, O. Richard, I. Debusschere, J. van Houdt, B. Tang
{"title":"Novel Bi-Layer Poly-Silicon Channel Vertical Flash Cell for Ultrahigh Density 3D SONOS NAND Technology","authors":"G. Kar, G. Van den bosch, A. Cacciato, P. Blomme, S. Van Aerde, A. Arreghini, L. Breuil, A. De Keersgieter, V. Paraschiv, C. Vrancken, B. Douhard, O. Richard, I. Debusschere, J. van Houdt, B. Tang","doi":"10.1109/IMW.2011.5873209","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873209","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121576251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Self-Limited Filament Formation and Low-Power Resistive Switching in CuxTe1-x/Al2O3/Si CBRAM Cell CuxTe1-x/Al2O3/Si CBRAM电池的自限制灯丝形成和低功耗电阻开关
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873219
L. Goux, K. Opsomer, R. Schuitema, R. Degraeve, R. Muller, C. Detavernier, D. Wouters, M. Jurczak, L. Altimime, J. Kittl
{"title":"Self-Limited Filament Formation and Low-Power Resistive Switching in CuxTe1-x/Al2O3/Si CBRAM Cell","authors":"L. Goux, K. Opsomer, R. Schuitema, R. Degraeve, R. Muller, C. Detavernier, D. Wouters, M. Jurczak, L. Altimime, J. Kittl","doi":"10.1109/IMW.2011.5873219","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873219","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131287747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Bridging Lithography Processes with NAND Flash ECC Complexity 桥接光刻工艺与NAND闪存ECC复杂性
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873235
P. Poliakov, P. Blomme, A. V. Pret, M. Corbalan, J. van Houdt, W. Dehaene
{"title":"Bridging Lithography Processes with NAND Flash ECC Complexity","authors":"P. Poliakov, P. Blomme, A. V. Pret, M. Corbalan, J. van Houdt, W. Dehaene","doi":"10.1109/IMW.2011.5873235","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873235","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115892365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
1Mb Non-Volatile Random Access Memory Using Oxide Semiconductor 使用氧化物半导体的1Mb非易失性随机存取存储器
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873242
T. Matsuzaki, H. Inoue, S. Nagatsuka, Y. Okazaki, Toshinari Sasaki, Kousei Noda, Yusuke Sekine, D. Matsubayashi, T. Ishizu, T. Onuki, A. Isobe, Y. Shionoiri, K. Kato, J. Koyama, Y. Yamashita, S. Yamazaki
{"title":"1Mb Non-Volatile Random Access Memory Using Oxide Semiconductor","authors":"T. Matsuzaki, H. Inoue, S. Nagatsuka, Y. Okazaki, Toshinari Sasaki, Kousei Noda, Yusuke Sekine, D. Matsubayashi, T. Ishizu, T. Onuki, A. Isobe, Y. Shionoiri, K. Kato, J. Koyama, Y. Yamashita, S. Yamazaki","doi":"10.1109/IMW.2011.5873242","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873242","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128843626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
Latest Advances and Roadmap for In-Plane and Perpendicular STT-RAM 平面内和垂直STT-RAM的最新进展和发展方向
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873205
A. Driskill-Smith, D. Apalkov, V. Nikitin, X. Tang, S. Watts, D. Lottis, K. Moon, A. Khvalkovskiy, R. Kawakami, X. Luo, A. Ong, E. Chen, M. Krounbi
{"title":"Latest Advances and Roadmap for In-Plane and Perpendicular STT-RAM","authors":"A. Driskill-Smith, D. Apalkov, V. Nikitin, X. Tang, S. Watts, D. Lottis, K. Moon, A. Khvalkovskiy, R. Kawakami, X. Luo, A. Ong, E. Chen, M. Krounbi","doi":"10.1109/IMW.2011.5873205","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873205","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127174451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 93
Downsizing of Ferroelectric-Gate Field-Effect-Transistors for Ferroelectric-NAND Flash Memory Cells 用于铁电nand闪存单元的铁电门场效应晶体管的小型化
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873239
L. Hai, Mitsue Takahashi, S. Sakai
{"title":"Downsizing of Ferroelectric-Gate Field-Effect-Transistors for Ferroelectric-NAND Flash Memory Cells","authors":"L. Hai, Mitsue Takahashi, S. Sakai","doi":"10.1109/IMW.2011.5873239","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873239","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132129655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
NAND Flash Memory-Based SSD Controller Using Full Page-Associative Block Recycling Mechanism 基于NAND闪存的SSD控制器，采用全页关联块回收机制
2011 3rd IEEE International Memory Workshop (IMW) Pub Date : 2011-05-22 DOI: 10.1109/IMW.2011.5873200
Masataka Nishi, Koji Matsuda, Ryoichi Inada, T. Nishimura, Ryo Fujita, M. Shiraishi, K. Sumiya, Hisanori Okibayashi
{"title":"NAND Flash Memory-Based SSD Controller Using Full Page-Associative Block Recycling Mechanism","authors":"Masataka Nishi, Koji Matsuda, Ryoichi Inada, T. Nishimura, Ryo Fujita, M. Shiraishi, K. Sumiya, Hisanori Okibayashi","doi":"10.1109/IMW.2011.5873200","DOIUrl":"https://doi.org/10.1109/IMW.2011.5873200","url":null,"abstract":"NA","PeriodicalId":261995,"journal":{"name":"2011 3rd IEEE International Memory Workshop (IMW)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131809736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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