Optical Technology, Semiconductor Materials, and Devices最新文献_第2页

Tolerance optimization design of RV reducer's cycloid-pin gear pair considering multiple targets 考虑多目标的RV减速器摆线针轮副公差优化设计

Optical Technology, Semiconductor Materials, and Devices Pub Date : 2023-02-14 DOI: 10.1117/12.2668420

Shuting Chen, W. Su

引用次数: 0

Design of a low-complexity DOA estimation method based on fourth-order cumulants 基于四阶累积量的低复杂度DOA估计方法设计

Optical Technology, Semiconductor Materials, and Devices Pub Date : 2023-02-14 DOI: 10.1117/12.2668628

Bin Lin, Guoping Hu

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Design of a photoconductive graphene infrared sensor based on inverted fluorination 基于倒氟化的光导石墨烯红外传感器的设计

Optical Technology, Semiconductor Materials, and Devices Pub Date : 2023-02-14 DOI: 10.1117/12.2668466

F. Yang, Xiaochen Ma, Fengsong Qian, Liangchen Hu, Chen Xu

引用次数: 0

Research on the performance of permanent magnet synchronous motor with stator winding fault 定子绕组故障的永磁同步电机性能研究

Optical Technology, Semiconductor Materials, and Devices Pub Date : 2023-02-14 DOI: 10.1117/12.2669866

Lu Jiang

引用次数: 0

Effect of the size distribution and morphology of refractory particle on self-curing time of water-based self-curing casting coatings 耐火颗粒粒径分布和形貌对水性自固化铸造涂料自固化时间的影响

Optical Technology, Semiconductor Materials, and Devices Pub Date : 2023-02-14 DOI: 10.1117/12.2668631

C. Zhan, Shengshan Feng, D. Huang, S. Xie, C. Liu, Q. Bian, Weifeng Wu, Jianli Chen, Jiahao Liang, Yunhua Gao

{"title":"Effect of the size distribution and morphology of refractory particle on self-curing time of water-based self-curing casting coatings","authors":"C. Zhan, Shengshan Feng, D. Huang, S. Xie, C. Liu, Q. Bian, Weifeng Wu, Jianli Chen, Jiahao Liang, Yunhua Gao","doi":"10.1117/12.2668631","DOIUrl":"https://doi.org/10.1117/12.2668631","url":null,"abstract":"The self-curing mechanism of water-base self-curing sand-casting coating is described. The relationship between the moisture content and the self-curing time of the coating is analyzed on the basis of the principle of non-isometric ball stacking and verified experimentally. The influence law and cause of the size-distribution and morphology of refractory-aggregate particle on self-curing time of coating is studied based on experiments. The results show that: the moisture content of the coating has an approximate linear relationship with the self-curing time of the coating, the particle-size distribution of refractory-aggregate has a significant effect on the self-curing time, while the particle size has little effect. The particle size of refractory aggregate should be normally distributed with an average particle size of 200 mesh to 325 mesh. The particle morphology of the refractory aggregate also significantly affects self-curing time of the coating, the coating prepared by the powder quartz whose grain shape is similar to the spherical shape has a low moisture content and the coating can cure quickly. The coating with a thickness of 0.5mm can achieve self-curing within 100 minutes under an environmental condition of a relative humidity of 80%±2%, which is expected to meet the production requirements of resin sand casting under high humidity climate conditions in South China.","PeriodicalId":259102,"journal":{"name":"Optical Technology, Semiconductor Materials, and Devices","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115640724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Mine image enhancement algorithm based on bilateral filtering and gamma correction 基于双边滤波和伽玛校正的矿山图像增强算法

Optical Technology, Semiconductor Materials, and Devices Pub Date : 2023-02-14 DOI: 10.1117/12.2670190

Xiucai Guo, Xiaolei Wei

引用次数: 0

The design of a method for recovering degraded images of atmospheric turbulence based on deep learning 基于深度学习的大气湍流退化图像恢复方法设计

Optical Technology, Semiconductor Materials, and Devices Pub Date : 2023-02-14 DOI: 10.1117/12.2668458

Xiangxi Li, Haotong Ma, Junqiu Chu

{"title":"The design of a method for recovering degraded images of atmospheric turbulence based on deep learning","authors":"Xiangxi Li, Haotong Ma, Junqiu Chu","doi":"10.1117/12.2668458","DOIUrl":"https://doi.org/10.1117/12.2668458","url":null,"abstract":"When imaging long-range targets using ground-based optical systems, the presence of atmospheric turbulence can cause blurring, dithering, and other degradations in the observed images. In previous research work, the research objects are mostly point targets, and the research work on the recovery of extended targets is yet to be perfected. With the rapid development of deep learning, neural networks driven by data can be used to obtain the recovered images directly by establishing a nonlinear mapping relationship between the degraded and original images. Therefore, the use of wavefront phase detection devices can be avoided by deep learning algorithms. The neural network directly reconstructs the original target of the turbulent degraded image that solves the problem of image blurring due to dynamic turbulence. In this paper, we propose DeblurNet, which employs the global self-attentive module. It improves channel and spatial information extraction, reduces information loss between network layers and global interaction representation to improve the performance of deep neural networks. DeblurNet is used to minimize the effect of turbulence on images and is validated on the NWPU-RESISC45 dataset. We refer to two image evaluation criteria, PSNR and SSIM. From the results, the direct reconstruction of the original target image by deep learning has a good recovery effect.","PeriodicalId":259102,"journal":{"name":"Optical Technology, Semiconductor Materials, and Devices","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125404963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fabrication of a hierarchical patterned sapphire substrate for GaN-based light-emitting diodes 用于氮化镓基发光二极管的层次化蓝宝石衬底的制备

Optical Technology, Semiconductor Materials, and Devices Pub Date : 2023-02-14 DOI: 10.1117/12.2668661

Xinxin Fu, Guojun Zha, Junying Hu, Shuping Huang, Yunming Li, Fahui Wang, Minhua Jiang

{"title":"Fabrication of a hierarchical patterned sapphire substrate for GaN-based light-emitting diodes","authors":"Xinxin Fu, Guojun Zha, Junying Hu, Shuping Huang, Yunming Li, Fahui Wang, Minhua Jiang","doi":"10.1117/12.2668661","DOIUrl":"https://doi.org/10.1117/12.2668661","url":null,"abstract":"Microscale or nanoscale patterns with specific structures on sapphire substrate can effectively reduce the dislocation defects of gallium nitride (GaN) material and improve the quality of gallium nitride crystal during the epitaxy growth of GaN-based light-emitting diodes, thus improving the internal quantum efficiency of LED luminescence. Numbers of methods have been used to fabricated patterned sapphire substrate. But most methods remain on the micron scale. In this work, the nickel annealing technique was introduced to fabricate a novel sapphire substrate, Hierarchical Patterned Sapphire Substrate (HPSS), which has typical characteristics of nano sapphire pillars on a Micro-Patterned Sapphire Substrate (MPSS) used for GaN-based Light-Emitting Diodes (LEDs). Nano-pillars with an average feature size of about 110 nm and feature surface density of ⪆2.339×109 cm-2 were obtained on commercial MPSS through this method. This nickel annealing technique provides an extremely simple, cost-effective and universal method to fabricate hierarchical patterns with two-inch wafer-scale. What’s more, the substrates can be not only sapphire but also extended to silicon, quartz and other heat-resisting materials which are widely used in photoelectric devices and micro/nanofabrication, making it a promising method to fabricate patterned substrate for industrial applications.","PeriodicalId":259102,"journal":{"name":"Optical Technology, Semiconductor Materials, and Devices","volume":"47 12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133265598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

System design of ultrasonic oil production flowmeter based on time difference method 基于时差法的超声波采油流量计系统设计

Optical Technology, Semiconductor Materials, and Devices Pub Date : 2023-02-14 DOI: 10.1117/12.2670205

Wenzheng Wang, Kai Yan

引用次数: 0

Simulation of low-frequency vortex-induced resonance triboelectric nanogenerator in low-velocity fluid 低速流体中低频涡激共振摩擦电纳米发电机的仿真

Optical Technology, Semiconductor Materials, and Devices Pub Date : 2023-02-14 DOI: 10.1117/12.2669874

Xiaowei Li, Di Zhang, Ying Gong, Zhongjie Li, Dan Zhang, Yan Peng, Yuan Zhou, Fan Shen

引用次数: 0