Design of a photoconductive graphene infrared sensor based on inverted fluorination

Infrared detectors are widely used in night vision imaging, security inspection, medical testing, environmental monitoring and other fields. Infrared detectors based on two-dimensional materials have become a research hotspot. A photoconductive graphene infrared detector based on inverted fluorination is introduced in this paper. An inverted fluorination method is adopted to reduce the physical bombardment damage to graphene and reduce the difficulty of graphene fluorination regulation. The Raman spectrum mapping of fluorinated graphene is analyzed. The variation of graphene Raman spectrum and infrared response against fluorination time is investigated, clarifying the properties of fluorinated graphene suitable for infrared sensing. The graphene sensor shows the highest responsivity when the value of ID/ID' peak ratio of the graphene Raman spectrum is the lowest. The photoconductive graphene infrared sensor based on controllable inverted fluorination process has the advantages of simple structure, high process feasibility.