[1991] Proceedings. IEEE Micro Electro Mechanical Systems最新文献

In situ observation and analysis of wet etching process for micro electro-mechanical systems 微机电系统湿法蚀刻过程的现场观察与分析

[1991] Proceedings. IEEE Micro Electro Mechanical Systems Pub Date : 1991-01-30 DOI: 10.1109/MEMSYS.1991.114776

O. Tabata, K. Shimaoka, S. Sugiyama

引用次数: 9

Laser-chemical three-dimensonal writing of multimaterial structures for microelectromechanics 用于微电子力学的多材料结构的激光化学三维书写

[1991] Proceedings. IEEE Micro Electro Mechanical Systems Pub Date : 1991-01-30 DOI: 10.1109/MEMSYS.1991.114796

T. Bloomstein, D. Ehrlich

引用次数: 15

Sub-micron gaps without sub-micron etching 没有亚微米蚀刻的亚微米间隙

[1991] Proceedings. IEEE Micro Electro Mechanical Systems Pub Date : 1991-01-30 DOI: 10.1109/MEMSYS.1991.114769

T. Furuhata, T. Hirano, K. J. Gabriel, H. Fujita

引用次数: 20

The LIGA technique-A novel concept for microstructures and the combination with Si-technologies by injection molding LIGA技术-微结构的新概念，并结合硅技术的注射成型

[1991] Proceedings. IEEE Micro Electro Mechanical Systems Pub Date : 1991-01-30 DOI: 10.1109/MEMSYS.1991.114771

W. Menz, W. Bacher, M. Harmening, Andreas Michel

引用次数: 93

Silicon wafer bonding techniques for assembly of micromechanical elements 微机械元件组装的硅晶圆键合技术

[1991] Proceedings. IEEE Micro Electro Mechanical Systems Pub Date : 1991-01-30 DOI: 10.1109/MEMSYS.1991.114775

A. Hanneborg

引用次数: 32

Characteristics of an ultra-small biomotor 超小型生物马达的特点

[1991] Proceedings. IEEE Micro Electro Mechanical Systems Pub Date : 1991-01-30 DOI: 10.1109/MEMSYS.1991.114804

N. Kami‐ike, S. Kudo, Y. Magariyama, S. Aizawa, H. Hotani

引用次数: 2

Linear motion of dielectric particles and living cells in microfabricated structures induced by traveling electric fields 行电场诱导微结构中介电粒子和活细胞的直线运动

[1991] Proceedings. IEEE Micro Electro Mechanical Systems Pub Date : 1991-01-30 DOI: 10.1109/MEMSYS.1991.114807

G. Fuhr, R. Hagedorn, T. Muller, B. Wagner, W. Benecke

引用次数: 79

Fabrication of assembled micromechanical components via deep X-ray lithography 用深x射线光刻技术制造装配的微机械部件

[1991] Proceedings. IEEE Micro Electro Mechanical Systems Pub Date : 1991-01-30 DOI: 10.1109/MEMSYS.1991.114772

K. Guckel, K. Skrobis, T. R. Christenson, J. Klein, S. Han, Bumkyoo Choi, E. G. Lovell

引用次数: 99

Fabrication of micro-structures using non-planar lithography (NPL) 非平面光刻技术制备微结构

[1991] Proceedings. IEEE Micro Electro Mechanical Systems Pub Date : 1991-01-30 DOI: 10.1109/MEMSYS.1991.114767

S. Jacobsen, D. L. Wells, C. C. Davis, J. Wood

{"title":"Fabrication of micro-structures using non-planar lithography (NPL)","authors":"S. Jacobsen, D. L. Wells, C. C. Davis, J. Wood","doi":"10.1109/MEMSYS.1991.114767","DOIUrl":"https://doi.org/10.1109/MEMSYS.1991.114767","url":null,"abstract":"The authors present specific nonplanar lithographic (NPL) techniques for use in fabricating both monolithic micromachines and microcomponents for use in larger systems. The emphasis is on the use of numerically controlled E-beam-based lithography, with the resist exposed over nonplanar surfaces. Previously, nonplanar, optical-mask-based approaches have been used to fabricate devices such as wobble motor rotors, but with less success than the NPL techniques due to depth-of-field problems. The specific focus is on etching cylindrically shaped metal structures which are either (1) homogeneous or (2) layered by successive deposition, masking, and etching. Structures on the order of 80 to 500 microns in diameter have been constructed of either solid metals or sputtered thin metallic layers on quartz shafts. A number of either deep or shallow patterns have been fabricated on and through the structures, with promising results. Examples include helices, longitudinal lines, holes, notches, flexures, barbs, alphanumeric characters, and electrostatic field emitting patterns for use in wobble motors. Efforts are now proceeding toward generating complete systems, including transducers and actuators for industrial and medical applications.<<ETX>>","PeriodicalId":258054,"journal":{"name":"[1991] Proceedings. IEEE Micro Electro Mechanical Systems","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114755282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 28

Fast and extremely selective polyimide etching with a magnetically controlled reactive ion etching system 快速和极选择性聚酰亚胺蚀刻与磁控制反应离子蚀刻系统

[1991] Proceedings. IEEE Micro Electro Mechanical Systems Pub Date : 1991-01-30 DOI: 10.1109/MEMSYS.1991.114794

F. Shimokawa, A. Furuya, S. Matsui

{"title":"Fast and extremely selective polyimide etching with a magnetically controlled reactive ion etching system","authors":"F. Shimokawa, A. Furuya, S. Matsui","doi":"10.1109/MEMSYS.1991.114794","DOIUrl":"https://doi.org/10.1109/MEMSYS.1991.114794","url":null,"abstract":"A dry etching technique using a newly proposed magnetically controlled reactive ion etching (MC-RIE) system to achieve fast and extremely selective polyimide etching is investigated. In this etching system, the etching parameters such as RF power, self-bias voltage, and gas pressure can be independently controlled by maintaining the plasma conditions. The self-bias voltage (ion accelerating energy) can be reduced to 30 V by using a plasma density (>1*10/sup 11/ cm/sup 3/) ten times higher than that of the conventional magnetron enhanced reactive ion etching (M-RIE) system. Etching rates up to 5 mu m/min are obtained under the following conditions: an oxygen gas pressure of 0.8 Pa, a self-bias voltage of about -60 V, and an RF power of 300 W. A Ti etching mask is found to have the highest selectivity of about 1000 from MC-RIE using O/sub 2/ gas. It is also found that increases in the selectivity (3000) and the etching rate are observed after 25% N/sub 2/ is added into the O/sub 2/ gas. Highly anisotropic etching with an aspect ratio of more than 10 in a 2 mu m line pattern was achieved. The polyimide etched surface is smooth and the surface roughness is less than 0.1 mu m.<<ETX>>","PeriodicalId":258054,"journal":{"name":"[1991] Proceedings. IEEE Micro Electro Mechanical Systems","volume":"737 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128045460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 17