2022 5th International Conference on Circuits, Systems and Simulation (ICCSS)最新文献

{"title":"CNN Specific ISA Extensions Based on RISC-V Processors","authors":"Xiang Yu, Zhijie Yang, LingHui Peng, Bo Lin, Wenjing Yang, Lei Wang","doi":"10.1109/iccss55260.2022.9802445","DOIUrl":"https://doi.org/10.1109/iccss55260.2022.9802445","url":null,"abstract":"The CNNs have achieved excellent performance in pattern recognition and target detection, which have a wide range of applications in industrial control, medical imaging, autonomous driving, and other fields. However, it is very inefficient to execute data-intensive CNN applications on edge devices with limited computing and power resources. It is necessary to add a domain-specific acceleration module on the edge devices to improve the performance when performing intensive calculations. In this work, we present ISA extensions based on the RISC-V ISA, including data operation instruction and data transfer instruction, aimed at boosting the computational efficiency of CNNs on edge devices. The microarchitecture supporting our proposed extensions is built on top of an open-source RISC-V core. In addition, extended instructions have been added to the GCC Binutils toolchain. To evaluate the effect of our extended instructions, we performed a set of workloads on the baseline and extended core, our proposed ISA extensions have a speed-up ratio of 1.5$times$ when executing a CNN, and reaches 2.48$times-2.82times$ when only performing convolution calculations. The results show that our proposed ISA extensions can effectively improve the performance of CNNs.","PeriodicalId":254992,"journal":{"name":"2022 5th International Conference on Circuits, Systems and Simulation (ICCSS)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128388390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Wide-Input-Range Multi-phase Clock Generator Design for CMOS Image Sensors","authors":"T. Li, Dongmei Li","doi":"10.1109/iccss55260.2022.9802429","DOIUrl":"https://doi.org/10.1109/iccss55260.2022.9802429","url":null,"abstract":"This paper proposes a novel phase-interpolator-based multi-phase clock generator, which could be applied in the single slope ADCs of the CMOS image systems. To widen the input range of the multi-phase clock generator, a fast reset method for the phase interpolator is proposed. Besides that an improvement using RC-based phase interpolator is also provided to deal with the deviation of the power supply voltage. The simulation results in CMOS 55nm process show that the duty cycle distortion of the proposed design is within ±3% when the input frequency ranges from 100MHz to 250MHz and the supply voltage ranges from 1V to 1. 4V.","PeriodicalId":254992,"journal":{"name":"2022 5th International Conference on Circuits, Systems and Simulation (ICCSS)","volume":"196 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132953135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and Performance of Flexible Solar-Blind Ultraviolet Photodetectors Based on Carbon Dots","authors":"Liang Wang, Mengru Zhu, Youzhi Huang, Xuenan Hao, Qiantong Liu, Zhiwei Zhao","doi":"10.1109/iccss55260.2022.9802147","DOIUrl":"https://doi.org/10.1109/iccss55260.2022.9802147","url":null,"abstract":"Solar-blind Ultraviolet (UV) photodetectors based on wide-bandgap semiconductors are one of the current research hotspots. However, most solar-blind UV photodetectors are based on rigid substrates, which cannot be bent and folded. Flexible UV photodetectors are attracting more and more attention due to its flexibility and portability. Its advantages of mechanical flexibility and impact resistance lay the foundation for the next generation of flexible and compatible optoelectronic devices. In this paper, planar and vertical flexible solar-blind UV photodetectors were fabricated based on carbon dots with strong absorption in the solar-blind UV region. Under 254nm UV illumination, the on/off ratio and the responsivity of the planar device is 1.15 and 0.018 mAW-1, respectively. The on/off ratio and the responsivity of the vertical device is 1.37 and 7.3 mAW-1, respectively. Under bending strains of 0.2%, 0.3% and 0.6%, the responsivity of the planar device is 0.019 mAW-1, 0.016 mAW-1,0.015 mAW-1, and under 0.2% bending strain, the responsivity of the vertical device is 3.7mAW-1. This has great application potential in flexible electronic devices and other fields, and provide some reference for the development of high performance flexible solar-blind deep-ultraviolet photodetectors","PeriodicalId":254992,"journal":{"name":"2022 5th International Conference on Circuits, Systems and Simulation (ICCSS)","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122969621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fault Injection Model of SRAM Memory Circuit Based on Hybrid Modeling","authors":"Ming Zhu, Maosong Shi, Xin-Sheng Wang, Yu Shu","doi":"10.1109/iccss55260.2022.9802217","DOIUrl":"https://doi.org/10.1109/iccss55260.2022.9802217","url":null,"abstract":"As one of the important parts of the space system, the reliability of the SRAM storage circuit always affects the safety of the spacecraft. The harsh environment full of radiation and extreme temperature in space brings radiation effect and aging effect to the circuit, which causes accidental damage and life reduction of the device, and in serious cases, circuit error and system failure. In this paper, from the perspective of fault model and fault injection, the hybrid modeling method of device level and circuit level is adopted to establish the fault model. At the same time, the sensitive area and the randomness of the fault are considered, and the switching factor is introduced to comprehensively consider the fault injection to improve the accuracy of the model. A device-level Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) simulation model is established in Technology Computer-Aided Design (TCAD), and the process calibration of the established MOSFET model is carried out through the process library file, to better approximate the actual model. Combined with the established MOSFET device model, the failure mechanism of single-particle effect in radiation effect and negative bias temperature instability effect in aging effect was studied. Based on the physical mechanism of the device level, the fault is mapped to the circuit level and the corresponding hybrid model is established. Combined with the advantages of the Veriloga language, the current source, and voltage source models are established, and the fault sensitive area and the randomness of fault occurrence are considered, and the switching factor is introduced into the fault model. Then, the established fault model is injected into the SRAM storage circuit in the form of fault devices for fault simulation, and the power current data is collected and compared with the fault model without a switching factor. Taking the measured data as a reference, the data errors of the two are compared. Experimental results show that the proposed fault model fits the actual data better and has higher accuracy.","PeriodicalId":254992,"journal":{"name":"2022 5th International Conference on Circuits, Systems and Simulation (ICCSS)","volume":"559 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124684923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Resistive Switching Device Based on Core-shell Ag@SiO2 Nanowire Networks","authors":"Mu-lo Wang, Z. Weng, Zerui Xu, Tianyi Ji, Zhipeng Xu, Zhiwei Zhao","doi":"10.1109/iccss55260.2022.9802409","DOIUrl":"https://doi.org/10.1109/iccss55260.2022.9802409","url":null,"abstract":"Resistive Switching (RS) devices based on core-shell-nanowire networks are promising candidates for future low-cost memory applications. In this work, an Ag@SiO2 core−shell structure was successfully prepared to realize a RS device. The Ag nanowires (NWs) were synthesized by polyol process and Ag@SiO2 core-shell NWs were then formed by the hydrolysis and polymerization of tetraethyl orthosilicate (TEOS). The microstructure was observed with transmission electron microscopy (TEM) and scanning electron microscopy (SEM), and the ultraviolet-visible (UV-vis) absorption spectra was determined by UV-vis spectrometer. Resistive devices were fabricated by drop coating the NWs solution on the substrate. The electrical properties of the devices are characterized. The result displays that it has volatile threshold resistance switching characteristics, and an on/off ratio of ∼104 was achieved. By changing the device fabrication method, the conclusion that devices with high area density NWs have lower threshold voltages is demonstrated. This result is instructive for the application of this RS device in low power consumption memory.","PeriodicalId":254992,"journal":{"name":"2022 5th International Conference on Circuits, Systems and Simulation (ICCSS)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129119617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Anti-solvent treatment of all Inorganic Perovskite CsPbBr3 Quantum Dot-Based Inverted Light Emitting Diodes","authors":"Fawad Saeed, Sajid Hussain, Ahmad Raza, Abida Perveen, A. Asghar, N. Din, Qasim Khan, W. Lei","doi":"10.1109/iccss55260.2022.9802261","DOIUrl":"https://doi.org/10.1109/iccss55260.2022.9802261","url":null,"abstract":"Owing to superb photophysical properties and utilization in quantum dot light-emitting diodes (QLEDs), perovskite-based cesium lead bromide (CsPbBr3) quantum dots have gained significant research attention. Solvent engineering can improve the QDs film and thus increase the efficiency of PeLED. The QDs film was post-treated with solvent to enhance surface morphology and photoluminance while simultaneously passivating surface structure and minimizing exciton quenching. Using IPA as a solvent treatment lowered the device turn-on voltage VT (1 cd m-2) from 2.6 V to 2.2 V. Moreover, Invert structure devices showed 2557 cd m-2 luminance and 10.7 cd A-1 current efficiency. These findings suggest that PeLED QDs-based devices can be used to design next-generation lighting and displays.","PeriodicalId":254992,"journal":{"name":"2022 5th International Conference on Circuits, Systems and Simulation (ICCSS)","volume":"139 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123071238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Novel Compact LC-Based Balun Combiner with 2nd and 3rd Harmonic Suppression","authors":"Wei Ma, Meiyu Wang, Zhiming Xiao, Weibo Hu","doi":"10.1109/iccss55260.2022.9802417","DOIUrl":"https://doi.org/10.1109/iccss55260.2022.9802417","url":null,"abstract":"This paper presents a novel compact balun combiner based on lumped inductors and capacitors. In addition to the functions of harmonic reducing, power combining, and impedance matching, the new structure accomplishes both the 2nd and the 3rd harmonic suppression by constructing band-stop filters and cancellation pathways. The proposed topology is studied theoretically and demonstrated on an FR4 printed circuit board with the size of 2 cm×4 cm. Experiment results show that differential power combination is achieved with around 0.7-dB loss for each path when all three ports are loaded to 50 ohms at 1 GHz. The 2nd harmonic suppression is more than 28-dB at 2 GHz and the 3rd harmonic can be largely canceled out with equal amplitudes while opposite phase at 3 GHz. Furthermore, the topology can be applied in not only printed circuit boards but also monolithic microwave integrated circuits.","PeriodicalId":254992,"journal":{"name":"2022 5th International Conference on Circuits, Systems and Simulation (ICCSS)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116322379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and Implementation of Intelligent-pharmaceutical-delivery-system Based on Loongson 1B","authors":"Liang Jinhui","doi":"10.1109/iccss55260.2022.9802240","DOIUrl":"https://doi.org/10.1109/iccss55260.2022.9802240","url":null,"abstract":"This paper design and implements an intelligent-pharmaceutical-delivery system based on Loongson 1B embedded technology. The system includes two physical parts: robot and PC station, and functionally includes control unit, delivery unit, medicine taking unit, and control App. The delivery unit’s functions are mainly implemented by OpenMV and PID algorithm. OpenMV installed on robot captures the images and extracts the line position data. PID algorithm is used with the position data to adjust the steering engine angle to ensure the robot walking along the line. A wheel motor encoder is adopted to calculate the walking length by counting pulse numbers. The medicine taking unit’s functions are implemented by machine vision and stepper motor. The control App sets tasks and assigns them to robot via wireless communication. Experimental results demonstrate the system accomplish the delivery tasks with high distance and position coincidence between the actual and pre-set targets.","PeriodicalId":254992,"journal":{"name":"2022 5th International Conference on Circuits, Systems and Simulation (ICCSS)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116438482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The RFID Acquisition and Transmission System for Warehouse Management Based on CAN Bus","authors":"M. Song, Jin-Yan Cao, Ze-Min Wang","doi":"10.1109/iccss55260.2022.9801891","DOIUrl":"https://doi.org/10.1109/iccss55260.2022.9801891","url":null,"abstract":"Warehouse picking is the most critical and laborious link in the logistics and distribution, so the degree of automation of the picking system determines the performance of the distribution center. Since the ordinary picking methods cannot meet the requirements of large-scale distribution of goods, it is crucial to develop a warehouse information acquisition and transmission system that can significantly increase the picking efficiency and reduce the picking error rate for the purpose of adapting to the market demand. In this paper, an RFID acquisition and transmission system for warehouse management based on CAN bus is designed, which can timely and effectively acquire and transmit the information on goods, thereby efficiently solving the above problems. The system facilitates the scientific, correct, fast, real-time, and continuous management of logistics picking operations, reduces picking error rates, accelerates the picking speed, lessens labor intensity, and saves human resources.","PeriodicalId":254992,"journal":{"name":"2022 5th International Conference on Circuits, Systems and Simulation (ICCSS)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129856627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Research on Comprehensive Evaluation and Prediction of Power Quality in Low Voltage Area","authors":"Meng Ming, Zhu Liu, Yumin Liu, Wenjing Li, L. Gao, J. Xiao","doi":"10.1109/iccss55260.2022.9802290","DOIUrl":"https://doi.org/10.1109/iccss55260.2022.9802290","url":null,"abstract":"The results of comprehensive evaluation of power quality are clearly time-series and nonlinear, making it feasible to study future trends based on historical data. In this paper, the comprehensive evaluation and prediction of power quality are linked, and the purpose is to predict the overall change trend of the power quality in a period of time in the future while evaluating it of the low voltage areas. In our scheme, we first use DS-AHP (Dempster-Shafer Analytic Hierarchy Process, DS-AHP)) to calculate the weight of the indicator to reduce the error caused by subjectivity. Secondly, the power quality is analyzed based on the radar chart, and the sample set is constructed with the comprehensive evaluation score obtained. Finally, we use PSO(Particle Swarm optimization, PSO) to optimize the parameters of SVM(Support Vector Machine, SVM), and establish an optimal prediction model that can reflect the change trend of power quality. Experiments show that the scheme for evaluating and predicting power quality proposed in this paper has good effectiveness and accuracy, and it can provide strong technical support for grasping the variation law of power quality in low voltage areas.","PeriodicalId":254992,"journal":{"name":"2022 5th International Conference on Circuits, Systems and Simulation (ICCSS)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129919046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}