Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)最新文献_第2页

Thermoelectric cooling of high power extremely localized heat sources: system aspects 大功率极局部热源的热电冷却:系统方面

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843330

V. Semenyuk, J. Stockholm, F. Gerard

引用次数: 3

Preparation of B-Si films by chemical vapor deposition 化学气相沉积法制备B-Si薄膜

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843475

M. Mukaida, T. Tsunoda, Y. Imai

引用次数: 4

Structural and thermoelectric properties of porous /spl beta/-FeSi/sub 2/ prepared by thermal spraying and sintering 热喷涂烧结制备多孔/spl β /-FeSi/sub - 2/材料的结构和热电性能

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843407

Y. Takahashi, R. Kikuchi, K. Kuramoto, A. Tsutsumi, H. Yamada, T. Inoue, K. Ueno

{"title":"Structural and thermoelectric properties of porous /spl beta/-FeSi/sub 2/ prepared by thermal spraying and sintering","authors":"Y. Takahashi, R. Kikuchi, K. Kuramoto, A. Tsutsumi, H. Yamada, T. Inoue, K. Ueno","doi":"10.1109/ICT.1999.843407","DOIUrl":"https://doi.org/10.1109/ICT.1999.843407","url":null,"abstract":"In this study the effect of porosity in /spl beta/-FeSi/sub 2/ on structural and thermoelectric properties was investigated for the large-scale thermoelectric power generation with porous FeSi/sub 2/ thermoelectric devices prepared by thermal spraying and sintering. In order to acquire high porosity in the silicide by sintering, an organic compound such as polyethylene glycol, sodium lauryl sulfate and polymethyl methacrylate was mixed with 1.4-/spl mu/m FeSi/sub 2/ particles, and then the mixture was sintered. The effects of the organic compounds and their amount on structural and thermoelectric properties of /spl beta/-FeSi/sub 2/ were evaluated based on SEM observation of the surface as well as on measurements of density, thermal and electric conductivity, and Seebeck coefficient. It was found that the porosity of the silicide increased up to 0.5 by adding the organic compounds, while the maximal porosity prepared by thermal spraying was at most 0.2. The heat conductivity of the porous material was found to significantly decrease down to one-tenth of that prepared by thermal spraying. Seebeck coefficient of the sintered FeSi/sub 2/ was found to be larger than that of the thermal-sprayed silicide. The pore size at the surface of the porous silicide was found to depend on the organic compounds.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114270376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Energy conversion using thermoacoustic devices 利用热声装置进行能量转换

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843470

O. Symko

引用次数: 9

Effect of antimony doping on the thermoelectric properties of the transition metal pentatellurides (Hf/sub 1-X/Zr/sub x/Te/sub 5-Y/Sb/sub Y/) 锑掺杂对过渡金属五碲化物(Hf/sub - 1-X/Zr/sub - x/Te/sub - 5-Y/Sb/sub -Y/)热电性能的影响

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843464

R. Littleton, T. Tritt, J. Kolis, M. C. Bryan, D. Ketchum, J. J. McGee

{"title":"Effect of antimony doping on the thermoelectric properties of the transition metal pentatellurides (Hf/sub 1-X/Zr/sub x/Te/sub 5-Y/Sb/sub Y/)","authors":"R. Littleton, T. Tritt, J. Kolis, M. C. Bryan, D. Ketchum, J. J. McGee","doi":"10.1109/ICT.1999.843464","DOIUrl":"https://doi.org/10.1109/ICT.1999.843464","url":null,"abstract":"The electrical resistivity, /spl rho/, and the thermopower, /spl alpha/, of the transition-metal pentatelluride system Hf/sub 1-x/Zr/sub x/Te/sub 5-Y/Sb/sub Y/ have been measured over a broad range of temperature, 10 K<T<320 K. The systematic Sb-doping of this system of materials has been performed over a range from 0<Y<0.5, where Y is the Sb concentration. Both parent materials (HfTe/sub 5/ and ZrTe/sub 5/) exhibit a resistive transition peak, T/sub p//spl ap/80 K for HfTe/sub 5/ and T/sub p//spl ap/145 K for ZrTe/sub 5/. Each displays a large positive (p-type) thermopower (/spl alpha//spl ges/+125 /spl mu/V/K) around room temperature, which undergoes a change to a large negative (n-type) thermopower (/spl alpha//spl les/-125 /spl mu/V/K) below the peak temperature. The zero crossing of thermopower, T/sub O/, correlates very well with the peak in the resistivity, T/sub P/. The magnitude of this resistive anomaly is typically 3-7 times the room temperature value of /spl rho//spl ap/1 m/spl Omega//spl middot/cm. At a specific level of Sb doping the resistive anomaly is \"washed out\" and only a semimetallic temperature dependence is displayed. However, X-ray diffraction experiments show that the pentatelluride structure is still evident. Lower levels of Sb-doping shift both T/sub O/ and T/sub P/ with temperature exhibiting only slight changes in the maximum magnitude of the thermopower. These materials are currently being investigated for potential low temperature thermoelectric applications.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124746863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Synthesis of skutterudite superlattices by controlled crystallization of elementary modulated reactants 用元素调制反应物控制结晶法合成角钨矿超晶格

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843321

J. Williams, H. Sellinschegg, J. Casperson, J. Harris, C. Daniels-Hafer, D.C. Johnson, G. Nolas, E. Nelson

{"title":"Synthesis of skutterudite superlattices by controlled crystallization of elementary modulated reactants","authors":"J. Williams, H. Sellinschegg, J. Casperson, J. Harris, C. Daniels-Hafer, D.C. Johnson, G. Nolas, E. Nelson","doi":"10.1109/ICT.1999.843321","DOIUrl":"https://doi.org/10.1109/ICT.1999.843321","url":null,"abstract":"Modulated elemental reactants were used to prepare a number of superlattices containing ternary skutterudites. For the superlattice [LaCo/sub 4/Sb/sub 12/]/sub n/[YCo/sub 4/Sb/sub 12/]/sub m/, low angle diffraction maxima from the superlattice structure were observed. Diffraction data collected as a function of annealing time and temperature are presented which show the evolution of the initially amorphous modulated reactant into the desired superlattice. For the [LaCo/sub 4/Sb/sub 12/]/sub n/[LaFe/sub 4/Sb/sub 12/]/sub m/ superlattice, rocking curve data were collected on both the low and high angle diffraction maxima. These data demonstrate that the skutterudite grains are randomly oriented with respect to the original superlattice but the chemical modulation of the superlattice is aligned with the substrate. Attempts to prepare skutterudite superlattices containing unfilled skutterudites were unsuccessful at short modulation distances, implying the facile inter diffusion of both the ternary cation and the transition metal through the empty cage sites in the structure.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"148 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123402967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimization of Peltier thermocouple using distributed Peltier effect 利用分布珀耳帖效应优化珀耳帖热电偶

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843392

I. Belov, V. Volkov, O. Manyakin

引用次数: 6

Thick-film thermoelectric microdevices 厚膜热电微器件

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843388

J. Fleurial, G. J. Snyder, J. Herman, P. Giauque, W. Phillips, M. Ryan, P. Shakkottai, E. Kolawa, M. Nicolet

{"title":"Thick-film thermoelectric microdevices","authors":"J. Fleurial, G. J. Snyder, J. Herman, P. Giauque, W. Phillips, M. Ryan, P. Shakkottai, E. Kolawa, M. Nicolet","doi":"10.1109/ICT.1999.843388","DOIUrl":"https://doi.org/10.1109/ICT.1999.843388","url":null,"abstract":"Miniaturized thermoelectric devices integrated into thermal management packages and low power, high voltage, electrical power source systems are of interest for a variety of space and terrestrial applications. In spite of their relatively low energy conversion efficiency, solid-state microcoolers and microgenerators based on state-of-the-art materials offer attractive solutions to the accelerating trend towards miniaturization of electronic components and \"system on a chip\" concepts where the functions of sense, compute, actuate, control, communicate and power are integrated. The miniaturization of state-of-the-art thermoelectric module technology based on Bi/sub 2/Te/sub 3/ alloys is severely limited due to mechanical and manufacturing constraints. Compared to bulk technology, the key advantages of integrated microdevices designed with thousands of thermocouples are their ability to handle much higher heat fluxes (thus resulting in high power densities), their much faster response time as well as the possibility of generating high voltages under small temperature differentials. We are currently developing novel microdevices with a conventional vertically integrated configuration combining high thermal conductivity substrates such as diamond or silicon, integrated circuit technology, and electrochemical deposition of thick thermoelectric films. We report here on our progress in developing techniques for obtaining 10-50 /spl mu/m thick films of p- and n-type Bi/sub 2/Te/sub 3/ alloys by electroplating through a thick photoresist template on top of patterned multilayer metallizations. This microdevice fabrication technology is now being developed for several applications, including a high cooling power density microcooler (200 W/cm/sup 2/) for thermal management of power electronics and a 100 mW autonomous hybrid thermoelectric-rechargeable batteries generator using low grade waste heat. Future directions of research are also discussed.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114855706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 45

A computational model of thermoelectric and thermomagnetic semiconductors 热电和热磁半导体的计算模型

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843370

H. Okumura, Y. Hasegawa, H. Nakamura, S. Yamaguchi

引用次数: 6

NiO-based thermoelectric materials 镍基热电材料

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI: 10.1109/ICT.1999.843403

W. Shin, N. Murayama

引用次数: 1