化学气相沉积法制备B-Si薄膜

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI:10.1109/ICT.1999.843475

M. Mukaida, T. Tsunoda, Y. Imai

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引用次数: 4

摘要

采用化学气相沉积(CVD)高频感应加热法制备了B-Si薄膜。以硅烷和二硼烷混合气体为原料。沉积在石墨衬底上，衬底温度为1188 ~ 1616 K, CVD室总压为2.7 kPa。源气中B/Si的摩尔比为6∶60。气源B/Si比较低时，形成SiB/sub - 4/。在较高的B/Si比下也可形成SiB/sub 6/和SiB/sub n/。沉积与衬底温度有关。随着衬底温度的升高，镀层的B浓度升高。测定了薄膜的塞贝克系数和电导率等电学性能。

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Preparation of B-Si films by chemical vapor deposition

B-Si films were prepared by chemical vapor deposition (CVD) using high-frequency induction heating. Mixed gases of silane and diborane were used as source materials. The deposits were prepared on a graphite substrates at the substrate temperature between 1188 and 1616 K under the total pressure in the CVD chamber of 2.7 kPa. The molar ratio of B/Si in the source gas was 6 to 60. At lower B/Si Ratio in the source gas, SiB/sub 4/ was formed. SiB/sub 6/ and SiB/sub n/ could be also formed at the higher ratios of B/Si. And, the deposit was dependent on the substrate temperature. The deposit with higher B concentration was obtained with increasing the substrate temperature. The electrical properties such as Seebeck coefficient and electrical conductivity of the films were measured.

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Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)

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